MOSFET – N 沟道,
SUPERFET) II
600 V, 47 A, 70 mW
FCH47N60
说
SUPERFET MOSFET ON Semiconductor
(SJ) MOSFET 。
!"、dv/dt $%
&。',
SUPERFET MOSFET ()!"*,+,'-
(PFC)、./0 / 1、2!、 ATX 345
*。
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VDS
RDS(ON) MAX
ID MAX
600 V
70 m @ 10 V
47 A
D
特
•6650 V @ TJ = 150°C
•678% RDS(on) = 58 m
•6 (78%Qg = 210 nC)
•69:"
; (78% Coss(eff.) = 420 pF)
•6100% #$&%&
•6') RoHS (<
• This is a Pb−Free Device
G
S
N-CHANNEL MOSFET
S
用
•6=>)?0
•6AC-DC
D
G
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
47N60
$Y
&Z
&3
&K
FCH47N60
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
April, 2020 − Rev. 3
1
Publication Order Number:
FCH47N60CN/D
FCH47N60
MOSFET 额 (TC = 25°C )
FCH47N60_F133
VDSS
-
600
V
VGSS
-
±30
符
ID
A
(TC = 25°C)
47
(TC = 100°C)
29.7
( 1)
141
A
1800
mJ
47
A
IDM
EAS
( 2)
IAR
( 1)
EAR
( 1)
41.7
mJ
dv/dt
dv/dt ( 3)
4.5
V/ns
(TC = 25°C)
417
W
25°C
3.33
W/°C
−55 $ + 150
°C
300
°C
PD
TJ, TSTG
TL
!"#
%&'()*+,!",./ 1/8”,0 5 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(234)
5)6 7( #,8。59 : ,;
,?@8,A"
BC。
1. 6 :E"#:)F!。
2. IAS = 18 A,VDD = 50 V,RG = 25 ,G$ TJ = 25°C。
3. ISD ≤ 48 A,di/dt ≤ 200 A/s,VDD ≤ BVDSS,G$ TJ = 25°C。
装标识购
编
顶标
装
装法
量
FCH47N60−F133
FCH47N60
TO−247
%H
N/A
N/A
30 &
热能
符
FCH47N60_F133
0.3
°C/W
RJC
F$IJ)
RJA
'KI(L(IJ)*
0.24
°C/W
RJA
F$M+IJ)
41.7
°C/W
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2
FCH47N60
电气特 (TC = 25°C )
符
测试
VGS = 0 V, ID = 250 A, TC = 25°C
600
−
−
V
VGS = 0 V, ID = 250 A, TC = 150°C
−
650
−
,N!"OP
ID = 250 A, !"2 25°C
−
0.6
−
V/°C
BVDS
,N
VGS = 0 V, ID = 47 A
−
700
−
V
IDSS
Q
VDS = 600 V, VGS = 0 V
−
−
1
A
VDS = 480 V, TC = 125 °C
−
−
10
- /
VGS = ±30 V, VDS = 0 V
−
−
±100
nA
VGS(th)
R
VGS = VDS, ID = 250 A
3.0
−
5.0
V
RDS(on)
-
ST?UJ
VGS = 10 V, ID = 23.5 A
−
0.058
0.070
V0W?
VDS = 40 V, ID = 23.5 A
−
40
−
S
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
特
BVDSS
BVDSS
/ TJ
IGSS
$
,N
!通特
gFS
"#特
Ciss
X4Y
−
5900
8000
pF
Coss
XY
−
3200
4200
pF
Crss
506XY
−
250
−
pF
Coss
XY
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
−
160
−
pF
ZXY
VDS = 0 V $ 400 V, VGS = 0 V
−
420
−
pF
?U[\
VDD = 300 V, ID = 47 A,
VGS = 10 V, RG = 25
( 4)
−
185
430
ns
−
210
450
ns
:][\
−
520
1100
ns
:];L
−
75
160
ns
−
210
270
nC
−
38
−
nC
−
110
−
nC
Coss(eff.)
$特
td(on)
tr
td(off)
tf
Qg(tot)
GU89L
10 V (^_
Qgs
-
^
Qgd
- “`CP。5?@Ah;ij,=>C'“abC”7c
eCP@B@。
4. kCdlm!"。
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3
FCH47N60
能特&
VGS
Top:
ID, Drain Current [A]
101
ID, Drain Current [A]
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
102
*Notes:
1. 250 s Pulse Test
2. TC = 25°C
100
102
150°C
25°C
101
−55°C
*Notes:
1. VDS = 40 V
2. 250 s Pulse Test
100
101
100
VDS, Drain−Source Voltage [V]
10−1
6
8
4
VGS, Gate−Source Voltage [V]
2
' 1. !通)*特
10
' 2. +输特
IDR, Reverse Drain Current [A]
RDS(ON) [], Drain−Source
On−Resistance
0.20
0.15
VGS = 10 V
0.10
VGS = 20 V
0.05
*Note: TJ = 25°C
0.00
0
20
40
VGS, Gate−Source Voltage [V]
Capacitance [pF]
100
C
iss
0.4
*Notes:
1. VGS = 0 V
2. 250 s Pulse Test
0.6
0.8
1.0
1.2
1.4
VSD, Source−Drain Voltage {V]
1.6
12
C
oss
15000
0
10−1
25°C
' 4. 6%极管正7电4,/源电流0温8的系
C = C + C (C = shorted
iss
gs
gd ds
C
=C +C
oss
ds
gd
C
=C
rss
gd
25000
5000
150°C
0.2
30000
10000
101
60 80 100 120 140 160 180 200
ID, Drain Current [A]
' 3. !通电阻,/漏极电流0栅极电4的系
20000
102
*Notes:
1. VGS = 0 V
2. f = 1 MHz
Crss
VDS = 100 V
10
VDS = 400 V
8
6
4
2
*Note: ID = 47 A
0
100
101
VDS, Drain−Source Voltage [V]
VDS = 250 V
0
50
100
150
200
QG, Total Gate Charge [nC]
' 5. 电:特
' 6. 栅极电荷特
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4
250
FCH47N60
3.0
1.2
RDS(ON), (Normalized)
Drain−Source On−Resistance
BVDSS, (Normalized)
Drain−Source Breakdown Voltage
能特& ('8n)
1.1
1.0
*Notes:
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
−100
0
−50
50
100
150
2.5
2.0
1.5
1.0
0.0
−100
200
*Notes:
1. VGS = 10 V
2. ID = 47 A
0.5
−50
TJ, Junction Temperature [°C]
' 7. =穿电4,/'温8的系
' 8. !通电阻,/温8的系
ID, Drain Current [A]
100 s
1 ms
101
DC
10 ms
100
10−1
*Notes:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
10−2 0
10
200
50
Operation in This Area is
Limited by RDS(on)
40
30
20
10
101
102
VDS, Drain−Source Voltage [V]
0
103
50
25
' 9. @ABC)
ZJC(t), I"q [°C/W]
ID, Drain Current [A]
102
0
50
100
150
TJ, Junction Temperature [°C]
75
100
125
TC, Case Temperature [°C]
' 10. 漏极电流E温的系
D = 0.5
10−1
*Notes:
1. ZJC(t) = 0.3°C/W Max.
2. Duty Factor, D = t1/t2
3. TJM − TC = PDM * ZJC(t)
0.2
0.1
10−2
10−5
PDM
0.05
0.02
0.01
t1
t2
single pulse
10−4
10−3
10−2
10−1
t1,op0L [1]
' 11. 瞬#热FG线
www.onsemi.cn
5
100
101
150
FCH47N60
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = r
Charge
' 12. 栅极电荷测试电路波H
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
10%
tr
td(on)
td(off)
ton
tf
toff
' 13. 阻$测试电路波H
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
' 14. 非箝
电I$测试电路波H
www.onsemi.cn
6
Time
FCH47N60
+
DUT
VSD
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VSD
VDD
Body Diode
Forward Voltage Drop
' 15. %极管JK dv/dt L测试电路波H
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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