FCI25N60N

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCI25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply D G DS G I2-PAK S MOSFET Maximum Ratings TC = 25 Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage o C unless otherwise noted. Parameter - Continuous (TC = 25oC) FCI25N60N_F102 600 Unit V ±30 V 25 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 8.3 A EAR Repetitive Avalanche Energy (Note 1) 2.2 mJ dv/dt - Continuous (TC = 100oC) - Pulsed (Note 1) 75 A (Note 2) 861 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL A 16 - Derate Above 25oC 15 V/ns 216 W 1.72 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCI25N60N_F102 RθJC Thermal Resistance, Junction to Case, Max. 0.58 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2010 Fairchild Semiconductor Corporation FCI25N60N Rev. C1 1 Unit o C/W www.fairchildsemi.com FCI25N60N — N-Channel SupreMOS® MOSFET November 2013 Part Number FCI25N60N_F102 Top Mark FCI25N60N Electrical Characteristics Symbol Package I2-PAK Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.74 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1 mA, VGS = 0 V,TJ = 25oC o ID = 1 mA, Referenced to 25 C VDS = 480 V, VGS = 0 V - - 10 VDS = 480 V, TJ = 125oC - - 100 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 12.5 A - 0.107 0.125 Ω gFS Forward Transconductance VDS = 20 V, ID = 12.5 A - - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 2520 3352 pF - 103 137 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 3.2 5 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 55 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 262 - pF Qg(tot) Total Gate Charge at 10V 57 74 nC Gate to Source Gate Charge VDS = 380 V, ID = 12.5 A, VGS = 10 V - Qgs - 10 - nC Qgd Gate to Drain “Miller” Charge - 18 - nC ESR Equivalent Series Resistance (G-S) - 1 - Ω - 21 52 ns - 22 54 ns - 68 146 ns - 5 20 ns (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 12.5 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 25 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 75 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12.5 A - - 1.2 V trr Reverse Recovery Time - 370 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 12.5 A, dIF/dt = 100 A/μs - 7 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 8.3 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 25 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2010 Fairchild Semiconductor Corporation FCI25N60N Rev. C1 2 www.fairchildsemi.com FCI25N60N — N-Channel SupreMOS® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 100 10V 8V 6V 4V ID, Drain Current[A] ID, Drain Current[A] VGS = 15V 10 o 25 C 10 o 150 C o -55 C *Notes: 1. 250μs Pulse Test 1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.3 0.05 0.1 1 10 VDS, Drain-Source Voltage[V] 1 30 2 4 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 350 100 300 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 250 200 VGS = 10V 150 VGS = 20V o 150 C 10 o 25 C *Notes: 1. VGS = 0V o 100 *Note: TC = 25 C 0 20 40 60 ID, Drain Current [A] 1 0.4 80 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] 4 10 Ciss 3 10 Crss 2 10 1 0 10 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 10 Coss 10 2. 250μs Pulse Test Figure 6. Gate Charge Characteristics 5 10 Capacitances [pF] 8 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2010 Fairchild Semiconductor Corporation FCI25N60N Rev. C1 6 4 2 0 600 3 VDS = 120V VDS = 300V VDS = 480V 8 *Note: ID = 12.5A 0 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FCI25N60N — N-Channel SupreMOS® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 12.5A 0.5 0.0 -100 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 100 30 10μs 100μs 10 25 10ms DC Operation in This Area is Limited by RDS(on) 1 *Notes: 0.1 20 15 10 o 1. TC = 25 C 5 o 2. TJ = 150 C 3. Single Pulse 0.01 200 1ms ID, Drain Current [A] ID, Drain Current [A] 2.5 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 ZZθJC(t), Thermal Response [ooC/W] θJC(t), Thermal Response [ C/W] Thermal Response [ZθJC] Figure 11. Transient Thermal Response Curve 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 0.01 t1 0.01 o 1. ZθJC(t) = 0.58 C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 1E-3 t2 *Notes: -5 10 ©2010 Fairchild Semiconductor Corporation FCI25N60N Rev. C1 -4 10 -3 -2 -1 10 10 10 Rectangular t1, RectangularPulse [sec] PulseDuration Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FCI25N60N — N-Channel SupreMOS® MOSFET Typical Performance Characteristics (Continued) FCI25N60N — N-Channel SupreMOS® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FCI25N60N Rev. C1 5 www.fairchildsemi.com FCI25N60N — N-Channel SupreMOS® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FCI25N60N Rev. C1 6 www.fairchildsemi.com FCI25N60N — N-Channel SupreMOS® MOSFET Mechanical Dimensions Figure 16. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-0I3 ©2010 Fairchild Semiconductor Corporation FCI25N60N Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2010 Fairchild Semiconductor Corporation FCI25N60N Rev. C1 8 www.fairchildsemi.com FCI25N60N — N-Channel SupreMOS® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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