FCMT099N65S3

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW FCMT099N65S3 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server / telecom power, adaptor and solar inverter applications. The Power88 package is an ultra−slim surface−mount package (1 mm high) with a low profile and small footprint (8x8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). VDSS RDS(ON) MAX ID MAX 650 V 99 mW @ 10 V 30 A D G S1 S1: Driver Source S2: Power Source S2 POWER MOSFET Features • • • • • • www.onsemi.com 700 V @ TJ = 150°C Typ. RDS(on) = 87 mW Ultra Low Gate Charge (Typ. Qg = 56 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 500 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant S2 S2 G PQFN4 8X8 2P CASE 483AP Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar S1 MARKING DIAGRAM $Y&Z&3&K FCMT 099N65S3 $Y &Z &3 &K FCMT099N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 February, 2020 − Rev. 5 1 Publication Order Number: FCMT099N65S3/D FCMT099N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 30 A Continuous (TC = 100°C) 19 IDM Drain Current 75 A EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ IAS Avalanche Current (Note 1) 4.4 A EAR Repetitive Avalanche Energy (Note 1) 2.27 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD TJ, TSTG TL Pulsed (Note 1) Power Dissipation (TC = 25°C) 227 W Derate Above 25°C 1.82 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 4.4 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. (Note 4) Value Unit 0.55 _C/W 45 4. Device on 1 in2 pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† FCMT099N65S3 FCMT099N65S3 PQFN8 13” 13.3 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FCMT099N65S3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.68 V/_C 10 mA ±100 nA 4.5 V 99 mW 2.77 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.7 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 15 A 87 Forward Transconductance VDS = 20 V, ID = 15 A 17 S 2270 pF 50 pF gFS 2.5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 500 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 74 pF Total Gate Charge at 10 V VDS = 400 V, ID = 15 A, VGS = 10 V (Note 5) 56 nC 13 nC 23 nC f = 1 MHz 0.5 W VDD = 400 V, ID = 15 A, VGS = 10 V, Rg = 4.7 W (Note 5) 22 ns 20 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 58 ns Turn-Off Fall Time 5 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 30 A ISM Maximum Pulsed Source to Drain Diode Forward Current 75 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 15 A 1.2 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 15 A, dIF/ dt = 100 A/ms IS 352 ns 6.5 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCMT099N65S3 TYPICAL PERFORMANCE CHARACTERISTICS 80 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 10 5.5 V ID, Drain Current (A) ID, Drain Current (A) 80 1 VDS = 20 V 250 ms Pulse Test 150°C 10 25°C −55°C 0.1 0.1 250 ms Pulse Test TC = 25°C 1 10 VDS, Drain−Source Voltage (V) 1 20 2 Figure 1. On−Region Characteristics 100 TC = 25°C 0.3 0.2 VGS = 10 V 0.1 VGS = 20 V 0.0 0 20 40 60 ID, Drain Current (A) 10 25°C 0.1 −55°C 0.01 VGS, Gate−Source Voltage (V) 10 Ciss 1000 Coss 10 1 0.1 0.1 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 100 VDS, Drain−Source Voltage (V) 0.5 1.0 1.5 VSD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 Capacitances (pF) 150°C 1 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 100 9 VGS = 0 V 250 ms Pulse Test 0.001 0.0 80 10000 4 5 7 8 6 VGS, Gate−Source Voltage (V) Figure 2. Transfer Characteristics IS, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance (W) 0.4 3 Crss 8 Figure 5. Capacitance Characteristics VDS = 130 V 6 VDS = 400 V 4 2 0 1000 ID = 15 A 0 15 30 45 Qg, Total Gate Charge (nC) 60 Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCMT099N65S3 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3.0 VGS = 0 V ID = 10 mA RDS(on), Drain−Source On−Resistance (Normalized) BVDSS, Drain−Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 −50 2.5 2.0 1.5 1.0 0.5 0.0 50 100 150 0 TJ, Junction Temperature (5C) ID, Drain Current (A) ID, Drain Current (A) 100 ms 1 ms 10 ms DC 1 Operation in this Area is Limited by RDS(on) TC = 25°C TJ = 150°C Single Pulse 0.1 0.01 1 10 100 VDS, Drain−Source Voltage (V) EOSS, (mJ) 10 50 75 100 125 TC, Case Temperature (5C) 150 Figure 10. Maximum Drain Current vs. Case Temperature 15 10 5 130 260 390 520 VDS, Drain to Source Voltage (V) 20 0 25 1000 Figure 9. Maximum Safe Operating Area 0 0 0 50 100 150 TJ, Junction Temperature (5C) 30 10 ms 10 −50 Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 100 VGS = 10 V ID = 15 A 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 FCMT099N65S3 r(t), Normalized Effective Transient Thermal Resistance TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2 1 0.1 DUTY CYCLE − DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 0.001 −5 10 SINGLE PULSE −4 10 t2 ZqJC(t) = r(t) x RqJC RqJC = 0.55°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 −3 −2 10 10 t, Rectangular Pulse Duration (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 −1 10 0 10 FCMT099N65S3 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCMT099N65S3 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. 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