FCP099N60E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 37 A, 99 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series. • Typ. RDS(on) = 87 mΩ • Ultra Low Gate Charge (Typ. Qg = 88nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies D GD S G TO-220 S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 6.8 A EAR Repetitive Avalanche Energy (Note 1) 3.57 mJ dv/dt Parameter FCP099N60E 600 - DC ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC) 37 - Continuous (TC = 100oC) - Pulsed 24 A 111 A (Note 2) 809 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt V (Note 1) (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL ±30 Unit V - Derate Above 25oC 20 V/ns 357 W 2.85 W/oC -55 to +150 oC 300 oC FCP099N60E Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.35 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2015 Fairchild Semiconductor Corporation FCP099N60E Rev. 1.1 1 oC/W www.fairchildsemi.com FCP099N60E — N-Channel SuperFET® II Easy-Drive MOSFET June 2016 FCP099N60E Part Number FCP099N60E Top Mark FCP099N60E Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - V VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - V - 0.7 - V/oC Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, Referenced to 25oC VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V,TC = 125oC - 2.1 - VGS = ±20 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 - 3.5 V Static Drain to Source On Resistance - 87 99 mΩ gFS Forward Transconductance VGS = 10 V, ID = 18.5 A VDS = 20 V, ID = 18.5 A - 31.4 - S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 380 V, VGS = 0 V, f = 1 MHz - 2604 3465 pF - 75 100 pF pF - 13.9 20 VDS = 0 V to 480 V, VGS = 0 V - 309 - pF VDS = 380 V, ID = 18.5 A, VGS = 10 V - 88 114 nC - 12 - nC - 38 - nC - 0.6 - Ω - 24 58 ns - 23 56 ns - 92 194 ns - 22 54 ns (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 18.5 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 37 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 111 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18.5 A - - 1.2 V trr Reverse Recovery Time - 387 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18.5 A, dIF/dt = 100 A/μs - 7.3 - μC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 6.8 A, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 18.5 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C 4. Essentially independent of operating temperature. ©2015 Fairchild Semiconductor Corporation FCP099N60E Rev. 1.1 2 www.fairchildsemi.com FCP099N60E — N-Channel SuperFET® II Easy-Drive MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 VGS = 15.0V 10.0V 8.0V 6.0V 5.5V 5.0V 4.5V *Notes: 1. VDS = 20V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 100 10 10 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.1 1 VDS, Drain-Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6 200 IS, Reverse Drain Current [A] 100 0.16 VGS = 10V 0.12 VGS = 20V 0.08 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.04 *Note: TC = 25 C 0 20 40 60 80 ID, Drain Current [A] 100 2. 250μs Pulse Test 1 0.2 120 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 1000 Coss 100 1 1.4 10 10000 10 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 100000 Capacitances [pF] 3 4 5 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.20 RDS(ON) [Ω], Drain-Source On-Resistance 2 *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.3 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2015 Fairchild Semiconductor Corporation FCP099N60E Rev. 1.1 VDS = 120V 3 VDS = 480V 6 4 2 0 600 VDS = 300V 8 *Note: ID = 18.5A 0 18 36 54 72 Qg, Total Gate Charge [nC] 90 www.fairchildsemi.com FCP099N60E — N-Channel SuperFET® II Easy-Drive MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 3.0 1.2 *Notes: 1. VGS = 0V 2. ID = 10mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 18.5A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 40 300 100 10μs ID, Drain Current [A] ID, Drain Current [A] 2.5 100μs 1ms 10ms DC 10 Operation in This Area is Limited by R DS(on) 1 *Notes: o 30 20 10 1. TC = 25 C o 0.1 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 20 EOSS, [μJ] 16 12 8 4 0 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] ©2015 Fairchild Semiconductor Corporation FCP099N60E Rev. 1.1 600 4 www.fairchildsemi.com FCP099N60E — N-Channel SuperFET® II Easy-Drive MOSFET Typical Performance Characteristics (Continued) FCP099N60E — N-Channel SuperFET® II Easy-Drive MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve 0.5 o ZθJC(t), Thermal Response [ C/W] 0.5 0.1 0.2 0.1 0.05 0.01 PDM 0.02 t1 0.01 *Notes: Single pulse 0.001 -5 10 ©2015 Fairchild Semiconductor Corporation FCP099N60E Rev. 1.1 t2 o 1. ZθJC(t) = 0.35 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 t1, Rectangular Pulse Duration [sec] 5 0 10 1 10 www.fairchildsemi.com FCP099N60E — N-Channel SuperFET® II Easy-Drive MOSFET Figure 13. Gate Charge Test Circuit & Waveform IG = const. Figure 14. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2015 Fairchild Semiconductor Corporation FCP099N60E Rev. 1.1 6 www.fairchildsemi.com FCP099N60E — N-Channel SuperFET® II Easy-Drive MOSFET Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2015 Fairchild Semiconductor Corporation FCP099N60E Rev. 1.1 7 www.fairchildsemi.com SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com