FCP11N60F

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ Features Description • 650 V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 320 mΩ • Fast Recovery Type (trr = 120 ns) • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 95 pF) • 100% Avalanche Tested • RoHS compliant Application • LCD/LED/PDP TV • Solar Inverter • Lighting • AC-DC Power Supply D GD S G TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter ID Drain Current IDM Drain Current VGSS Gate to Source Voltage FCP11N60F 600 - Continuous (TC = 25oC) 11 - Continuous (TC = 100oC) - Pulsed Unit V A 7 (Note 1) 33 A ±30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 340 IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC 125 W 1.0 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCP11N60F Unit RθJC Thermal Resistance, Junction to Case, Max 1.0 o C/W RθJA Thermal Resistance, Junction to Ambient, Max 62.5 o C/W ©2010 Fairchild Semiconductor Corporation FCP11N60F Rev. C2 1 www.fairchildsemi.com FCP11N60F — N-Channel SuperFET® FRFET® MOSFET November 2013 Device Marking FCP11N60F Device FCP11N60F Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Off Characteristics Parameter BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current Test Conditions Min. VGS = 0 V, ID = 250 μA, TC = 25oC Typ. Max. Unit 600 - - V VGS = 0 V, ID = 250 μA, TC = 150oC - 650 - V ID = 250 μA, Referenced to 25oC - 0.6 - V/oC VGS = 0 V, ID = 11 A - 700 - V VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 5.5 A - 0.32 0.38 Ω gFS Forward Transconductance VDS = 40 V, ID = 5.5 A - 6 - S VDS = 25 V, VGS = 0 V f = 1.0 MHz - 1148 1490 pF - 671 870 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 63 82 Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz - 35 - pF Cosseff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 95 - pF - 34 80 ns VDD = 300 V, ID = 11 A RG = 25 Ω - 98 205 ns - 119 250 ns - 56 120 ns - 40 52 nC - 7.2 - nC - 21 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge (Note 4) VDS = 480 V, ID = 11 A, VGS = 10 V (Note 4) Drain-Source Diode Characteristics Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 11 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 33 A VSD Drain to Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 11 A - - 1.4 V VGS = 0 V, ISD = 11 A dIF/dt = 100 A/μs - 120 - ns - 0.8 - μC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C. 3. ISD ≤ 11 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2010 Fairchild Semiconductor Corporation FCP11N60F Rev. C2 2 www.fairchildsemi.com FCP11N60F — N-Channel SuperFET® FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 1 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250 μs Pulse Test o 2. TC = 25 C -1 10 10 o 150 C o o 25 C 0 10 -55 C * Note 1. VDS = 40V 2. 250 μs Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 1.0 0.8 VGS = 10V 0.6 VGS = 20V 0.4 0.2 1 10 0 10 o o 150 C 25 C * Notes : 1. VGS = 0V 2. 250 μs Pulse Test o * Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 -1 10 40 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Capacitance [pF] 1.4 1.6 VDS = 100V 4000 Coss 3000 0 -1 10 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5000 1000 1.0 Figure 6. Gate Charge Characteristics 6000 2000 0.8 VSD , Source-Drain Voltage [V] * Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Crss 0 10 1 6 4 2 * Note : ID = 11A 0 5 10 15 20 25 30 35 40 45 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2010 Fairchild Semiconductor Corporation FCP11N60F Rev. C2 VDS = 400V 8 0 10 VDS = 250V 10 3 www.fairchildsemi.com FCP11N60F — N-Channel SuperFET® FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 2 ID, Drain Current [A] ID, Drain Current [A] 10.0 100 us 1 1 ms 10 ms DC 0 10 * Notes : o 1. TC = 25 C -2 0 10 7.5 5.0 2.5 o 2. TJ = 150 C 3. Single Pulse 10 200 12.5 10 -1 150 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 10 100 o Figure 9. Safe Operating Area 10 50 TJ, Junction Temperature [ C] 1 2 10 0.0 25 3 10 10 50 75 VDS, Drain-Source Voltage [V] 100 125 150 o TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 D = 0 .5 0 .2 10 * N o te s : o 1 . Z θ J C ( t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .1 -1 0 .0 5 0 .0 2 0 .0 1 θJC ZθJC Z (t), (t),Thermal ThermalResponse Response[oC/W] 10 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ©2010 Fairchild Semiconductor Corporation FCP11N60F Rev. C2 4 www.fairchildsemi.com FCP11N60F — N-Channel SuperFET® FRFET® MOSFET Typical Performance Characteristics (Continued) FCP11N60F — N-Channel SuperFET® FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT 200nF Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2010 Fairchild Semiconductor Corporation FCP11N60F Rev. C2 5 www.fairchildsemi.com FCP11N60F — N-Channel SuperFET® FRFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2010 Fairchild Semiconductor Corporation FCP11N60F Rev. C2 6 www.fairchildsemi.com SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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