Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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FCP150N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 24 A, 150 mΩ
Features
Description
• 700 V @ TJ = 150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
• Typ. RDS(on) = 133 mΩ
• Ultra Low Gate Charge (Typ. Qg = 72 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
D
G
D
S
G
TO-220
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FCP150N65F
650
- DC
±20
- AC
(f > 1 Hz)
o
- Continuous (TC = 25 C)
±30
24
Unit
V
V
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
4.7
A
EAR
Repetitive Avalanche Energy
(Note 1)
2.98
mJ
dv/dt
- Continuous (TC = 100oC)
- Pulsed
14.9
(Note 1)
72
A
(Note 2)
663
mJ
MOSFET dv/dt
100
Peak Diode Recovery dv/dt
(Note 3)
o
(TC = 25 C)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
A
- Derate Above 25oC
50
V/ns
298
W
2.38
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
FCP150N65F
RθJC
Thermal Resistance, Junction to Case, Max.
0.42
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2014 Fairchild Semiconductor Corporation
FCP150N65F Rev. C2
1
Unit
oC/W
www.fairchildsemi.com
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET
December 2014
Part Number
FCP150N65F
Top Mark
FCP150N65F
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
VGS = 0 V, ID = 10 mA, TJ = 25°C
650
-
-
VGS = 0 V, ID = 10 mA, TJ = 150°C
700
-
-
-
0.72
-
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 10 mA, Referenced to 25oC
VDS = 650 V, VGS = 0 V
-
-
10
VDS = 520 V, VGS = 0 V,TC = 125oC
-
86
-
VGS = ±20 V, VDS = 0 V
-
-
±100
V
V/oC
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 2.4 mA
3
-
5
V
Static Drain to Source On Resistance
-
133
150
mΩ
gFS
Forward Transconductance
VGS = 10 V, ID = 12 A
VDS = 20 V, ID = 12 A
-
22
-
S
Dynamic Characteristics
-
2810
3737
pF
-
91
121
pF
-
0.77
-
pF
-
54
-
pF
VDS = 0 V to 400 V, VGS = 0 V
-
361
-
pF
VDS = 380 V, ID = 12 A,
VGS = 10 V
-
72
94
nC
-
15
-
nC
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 380 V, VGS = 0 V, f = 1 MHz
Coss eff.
Effective Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
(Note 4)
f = 1 MHz
-
31
-
nC
-
0.69
-
Ω
-
28
66
ns
-
15
40
ns
-
73
156
ns
-
6
22
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380 V, ID = 12 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
24
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
72
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12 A
-
-
1.2
V
trr
Reverse Recovery Time
-
123
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 12 A,
dIF/dt = 100 A/μs
-
597
-
nC
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4.7 A, RG = 25 Ω, Starting TJ = 25°C.
3. ISD ≤ 12 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2014 Fairchild Semiconductor Corporation
FCP150N65F Rev. C2
2
www.fairchildsemi.com
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
ID, Drain Current[A]
ID, Drain Current[A]
100
10
o
150 C
10
o
25 C
o
-55 C
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
1
0.1
1
VDS, Drain-Source Voltage[V]
10
1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
7
VGS, Gate-Source Voltage[V]
100
IS, Reverse Drain Current [A]
0.25
0.20
VGS = 10V
0.15
VGS = 20V
o
10
150 C
1
o
25 C
0.1
0.01
*Notes:
1. VGS = 0V
o
0.10
*Note: TC = 25 C
0
20
40
60
ID, Drain Current [A]
80
0.001
0.0
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Ciss
1000
Coss
100
1
0.1
0.1
0.4
0.8
1.2
VSD, Body Diode Forward Voltage [V]
1.6
10
10000
10
2. 250μs Pulse Test
Figure 6. Gate Charge Characteristics
100000
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.30
RDS(ON) [Ω],
Drain-Source On-Resistance
3
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
100
VDS, Drain-Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCP150N65F Rev. C2
6
4
2
0
50
3
VDS = 130V
VDS = 325V
VDS = 520V
8
*Note: ID = 12A
0
16
32
48
64
Qg, Total Gate Charge [nC]
80
www.fairchildsemi.com
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 10mA
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
2.0
1.5
1.0
0.5
-100
200
Figure 9. Maximum Safe Operating Area
*Notes:
1. VGS = 10V
2. ID = 12A
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
25
100
20
100μs
10
ID, Drain Current [A]
ID, Drain Current [A]
10μs
1ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
15
10
5
o
1. TC = 25 C
o
0.01
0.1
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
15
EOSS, [μJ]
12
9
6
3
0
0
110
220
330
440
550
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCP150N65F Rev. C2
660
4
www.fairchildsemi.com
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
o
ZθJC(t), Thermal Response [ C/W]
1
0.5
0.1
0.2
PDM
0.1
0.05
0.01
t1
0.02
0.01
o
Single pulse
0.001
-5
10
©2014 Fairchild Semiconductor Corporation
FCP150N65F Rev. C2
t2
*Notes:
1. ZθJC(t) = 0.42 C/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
5
-1
10
1
www.fairchildsemi.com
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET
IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCP150N65F Rev. C2
6
www.fairchildsemi.com
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2014 Fairchild Semiconductor Corporation
FCP150N65F Rev. C2
7
www.fairchildsemi.com
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET
Mechanical Dimensions
Figure 17. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
©2014 Fairchild Semiconductor Corporation
FCP150N65F Rev. C2
8
www.fairchildsemi.com
AccuPower™
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
®*
®
tm
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
TinyBoost®
®
TinyBuck
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Xsens™
仙童 ™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
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system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I73
©2014 Fairchild Semiconductor Corporation
FCP150N65F Rev. C2
9
www.fairchildsemi.com
FCP150N65F — N-Channel SuperFET® II FRFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
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