Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FCP20N60 / FCPF20N60
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features
Description
• 650V @ TJ = 150°C
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
• Typ. RDS(on) = 150 mΩ
• Ultra Low Gate Charge (Typ. Qg = 75 nC )
• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
• 100% Avalanche Tested
Applications
• Solar Inverter
• AC-DC Power Supply
D
GD
S
TO-220
G
G
D
S
TO-220F
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source Voltage
FCP20N60
FCPF20N60
600
(Note 1)
Unit
V
20
12.5
20*
12.5*
A
A
60
60*
A
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
690
mJ
IAR
Avalanche Current
(Note 1)
20
A
EAR
Repetitive Avalanche Energy
(Note 1)
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
°C
(TC = 25°C)
- Derate Above 25°C
208
1.67
39
0.3
W
W/°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
FCP20N60
FCPF20N60
Unit
RθJC
Symbol
Thermal Resistance, Junction-to-Case
Parameter
0.6
3.2
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2008 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. C0
1
www.fairchildsemi.com
FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET
August 2014
Part Number
FCP20N60
Top Mark
FCP20N60
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
FCPF20N60
FCPF20N60
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics
Symbol
TC = 25oC unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
600
-
-
V
ID = 250 μA, VGS = 0 V, TJ = 150oC
-
650
-
V
ID = 250 μA, Referenced to 25oC
-
0.6
-
V/oC
VGS = 0 V, ID = 20 A
-
700
-
V
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, TC = 125oC
-
-
10
VGS = ±30 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10 V, ID = 10 A
-
0.15
0.19
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 10 A
-
17
-
S
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
2370
3080
pF
-
1280
1665
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
95
-
pF
Coss
Output Capacitance
VDS = 480 V, VGS = 0 V, f = 1 MHz
-
65
85
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
-
165
-
pF
Qg
Total Gate Charge at 10V
75
98
nC
Qgs
Gate to Source Gate Charge
VDS = 480 V, ID = 20 A,
VGS = 10 V
-
13.5
18
nC
Qgd
Gate to Drain “Miller” Charge
-
36
-
nC
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 300 V, ID = 20 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-
62
135
ns
-
140
290
ns
-
230
470
ns
-
65
140
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
20
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
60
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 20 A
-
-
1.4
V
trr
Reverse Recovery Time
-
530
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 20 A,
dIF/dt = 100 A/μs
-
10.5
-
μC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD ≤ 20 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
©2008 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. C0
2
www.fairchildsemi.com
FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
VGS
2
10
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID , Drain Current [A]
ID, Drain Current [A]
Top :
0
10
25°C
-55°C
0
10
Notes :
1. 250μs Pulse Test
2. TC = 25°C
-1
0
10
Note
1. VDS = 40V
2. 250μs Pulse Test
2
1
10
150°C
1
10
10
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2
0.3
VGS = 10V
0.2
VGS = 20V
0.1
1
10
150°C
0
10
25°C
Notes :
1. VGS = 0V
2. 250μs Pulse Test
Note : TJ = 25°C
0.0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
10000
VGS, Gate-Source Voltage [V]
7000
Coss
5000
4000
Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
3000
2000
Crss
1000
0
-1
10
0
10
10
1.6
1
10
VDS = 250V
VDS = 400V
8
6
4
2
Note : ID = 20A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2008 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. C0
1.4
VDS = 100V
Crss = Cgd
6000
1.2
12
Coss = Cds + Cgd
8000
1.0
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
9000
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
10
10
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.4
Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 20 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
Figure 9-1. Maximum Safe Operating Area
for FCP20N60
100
150
Operation in This Area
is Limited by R DS(on)
2
10
ID, Drain Current [A]
ID, Drain Current [A]
100 us
1 ms
1
10
10 ms
DC
0
10
Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
100 us
1
1 ms
10
10 ms
100 ms
0
10
DC
Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
3. Single Pulse
3. Single Pulse
-2
10
200
Figure 9-2. Maximum Safe Operating Area
for FCPF20N60
Operation in This Area
is Limited by R DS(on)
2
10
50
TJ, Junction Temperature [°C]
-2
0
1
10
2
10
10
3
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
25
ID, Drain Current [A]
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [°C]
©2008 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. C0
4
www.fairchildsemi.com
FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics (Continued)
FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP20N60
ZθJC(t), Thermal Response [oC/W]
ZθJC(t), Thermal Response
10
0
D = 0 .5
10
N o te s :
1 . Z θ J C (t) = 0 .6 ° C /W M a x .
0 .2
-1
2 . D u ty F a c to r, D = t 1 /t 2
0 .1
3 . T J M - T C = P D M * Z θ J C (t)
0 .0 5
0 .0 2
PDM
0 .0 1
10
-2
t1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t 1 ,t1S, qRectangular
u a re W a v ePulse
P u ls e
D u ra tio[sec]
n [s e c ]
Duration
D = 0 .5
10
0
0 .2
0 .1
N o te s :
1 . Z θ J C ( t) = 3 .2 ° C /W M a x .
0 .0 5
10
-1
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 2
0 .0 1
θJC
o
ZθJC
Thermal
Z(t),(t),
ThermalResponse
Response [ C/W]
Figure 11-2. Transient Thermal Response Curve for FCPF20N60
PDM
s in g le p u ls e
10
t1
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , tS
u a r e W a v ePulse
P u ls eDuration
D u r a tio[sec]
n [s e c ]
1,qRectangular
©2008 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. C0
5
www.fairchildsemi.com
FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
tp
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2008 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. C0
6
www.fairchildsemi.com
FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2008 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. C0
7
www.fairchildsemi.com
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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