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FCP260N60E / FCPF260N60E
N 沟道 SuperFET® II Easy-Drive MOSFET
600 V, 15 A, 260 m
特性
说明
• 650 V @ TJ = 150°C
SuperFET® II MOSFET 是飞兆半导体新一代利用电荷平衡技术
实现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓越
的开关性能、dv/dt额定值和更高雪崩能量。类似地，与SuperFET
II MOSFET 系列相比，SuperFET II MOSFET Easy-Drive 系列具
有略为缓慢的上升和下降时间。该系列产品型号以 “E” 作为前缀，
有助于解决 EMI 问题，设计部署更为简单。如需获得更快的开关
速 度 并 用 于 开 关 损 耗 必 须 尽 可 能 低 的 应 用 中，请 考 虑 使 用
SuperFET II MOSFET 系列。
• 典型值 RDS(on) = 220 m
• 超低栅极电荷 （典型值 Qg = 48 nC)
• 低有效输出电容 （典型值 Coss(eff.)= 129 pF)
• 100% 经过雪崩测试
• 集成栅极电阻
• 符合 RoHS 标准
应用
• LCD / LED / PDP 电视灯光
• 光伏逆变器
• AC-DC 电源
D
GD
S
MOSFET 最大额定值
符号
VDSS
漏极－源极电压
VGSS
栅极－源极电压
G
G
D
S
TO-220
TO-220F
S
TC = 25°C 除非另有说明。
参数
ID
漏极电流
FCP260N60E FCPF260N60E
600
单位
V
±20
V
- DC
- AC
(f > 1 Hz)
±30
V
- 连续 (TC = 25°C)
15
15*
- 连续 (TC = 100°C)
9.5
9.5*
45
45*
A
A
IDM
漏极电流
EAS
单脉冲雪崩能量
（说明 2）
IAR
雪崩电流
（说明 1）
3.0
A
EAR
重复雪崩能量
MOSFET dv/dt
（说明 1）
1.56
mJ
二极管恢复 dv/dt 峰值
（说明 3）
dv/dt
- 脉冲
（说明 1）
mJ
100
V/ns
20
(TC = 25°C)
156
36
W
- 降低至 25°C 以上
1.25
0.29
W/°C
PD
功耗
TJ, TSTG
工作和存储温度范围
用于焊接的最大引线温度，距离外壳 1/8"，持续 5 秒
TL
292.5
-55 至 +150
°C
300
°C
* 漏极电流受限于最大结温
热性能
符号
参数
FCP260N60E
FCPF260N60E
RJC
结至外壳热阻最大值
0.8
3.5
RJA
结至环境热阻最大值
62.5
62.5
© 2012 飞兆半导体公司
FCP260N60E / FCPF260N60E Rev. C4
1
单位
°C/W
www.fairchildsemi.com
FCP260N60E / FCPF260N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
2014 年 2 月
器件编号
FCP260N60E
顶标
FCP260N60E
封装
TO-220
包装方法
塑料管
卷尺寸
不适用
带宽
不适用
数量
50 个
FCPF260N60E
FCPF260N60E
TO-220F
塑料管
不适用
不适用
50 个
电气特性 TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值
典型值
最大值
单位
关断特性
VGS = 0 V, ID = 10 mA, TJ = 25°C
600
-
-
VGS = 0 V, ID = 10 mA, TJ = 150°C
650
-
-
-
0.67
-
V/°C
VGS = 0 V, ID = 15 A
-
700
-
V
VDS = 480 V, VGS = 0 V
-
-
1
VDS = 480 V, TC = 125°C
-
-
10
-
±100
BVDSS
漏极－源极击穿电压
BVDSS
/ TJ
BVDS
击穿电压温度系数
ID=10 mA，参考条件为 25°C
漏极 - 源极雪崩击穿电压
V
A
IDSS
零栅极电压漏极电流
IGSS
栅极 - 体漏电流
VGS = ±20 V, VDS = 0 V
-
VGS(th)
RDS(on)
栅极阈值电压
VGS = VDS, ID = 250 A
2.5
-
3.5
V
漏极至源极静态导通电阻
-
0.22
0.26
gFS
正向跨导
VGS = 10 V, ID = 7.5 A
VDS = 20 V, ID = 7.5 A
-
15.5
-
S
-
1880
2500
pF
-
1330
1770
pF
-
85
130
pF
-
32
-
pF
129
-
pF
nC
nA
导通特性
动态特性
Ciss
Coss
Crss
输入电容
输出电容
反向传输电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
输出电容
VDS = 380 V, VGS = 0 V, f = 1 MHz
Coss(eff.)
有效输出电容
VDS = 0 V 至 480 V, VGS = 0 V
-
Qg(tot)
10 V 的栅极电荷总量
VDS = 380 V, ID = 7.5 A,
VGS = 10 V
-
48
62
-
7.4
-
nC
-
17
-
nC
f = 1 MHz
-
5.8
-
-
20
50
ns
VDD = 380 V, ID = 7.5 A,
VGS = 10 V, RG = 4.7
-
11
32
ns
-
89
188
ns
-
13
36
ns
漏极 - 源极二极管最大正向连续电流
-
-
15
A
漏极 - 源极二极管最大正向脉冲电流
-
-
45
A
VGS = 0 V, ISD = 7.5 A
-
-
1.2
V
VGS = 0 V, ISD = 7.5 A,
dIF/dt = 100 A/s
-
270
-
ns
-
3.6
-
C
Coss
Qgs
栅极 - 源极栅极电荷
Qgd
栅极 - 漏极 “ 米勒 ” 电荷
ESR
等效串联电阻
（说明 4）
开关特性
td(on)
导通延迟时间
tr
开通上升时间
td(off)
关断延迟时间
tf
关断下降时间
（说明 4）
漏极 - 源极二极管特性
IS
ISM
VSD
漏极 - 源极二极管正向电压
trr
反向恢复时间
Qrr
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. IAS = 3 A， VDD = 50 V， RG = 25 ，启动 TJ = 25°C。
3. ISD 7.5 A， di/dt 200 A/s， VDD BVDSS，启动 TJ = 25°C。
4. 本质上独立于工作温度的典型特性。
© 2012 飞兆半导体公司
FCP260N60E / FCPF260N60E Rev. C4
2
www.fairchildsemi.com
FCP260N60E / FCPF260N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
封装标识与定购信息
图 1. 导通区域特性
图 2. 传输特性
100
VGS = 20.0V
10.0V
8.0V
7.0V
6.0V
5.0V
4.5V
10
ID, Drain Current[A]
ID, Drain Current[A]
50
1
10
o
150 C
o
25 C
1
o
-55 C
*Notes:
1. 250s Pulse Test
o
2. TC = 25 C
0.3
0.1
1
VDS, Drain to Source Voltage[V]
10
0.1
20
图 3. 导通电阻变化与漏极电流和栅极电压
4
6
VGS, Gate to Source Voltage[V]
100
IS, Reverse Drain Current [A]
0.5
0.4
VGS = 10V
0.3
VGS = 20V
0.2
o
150 C
10
o
25 C
*Notes:
1. VGS = 0V
o
0.1
*Note: TC = 25 C
0
10
20
30
ID, Drain Current [A]
40
2. 250s Pulse Test
1
0.2
50
图 5. 电容特性
VGS, Gate to Source Voltage [V]
1000
100
1
0.5
0.1
1.4
10
Ciss
10
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
图 6. 栅极电荷特性
10000
Capacitances [pF]
8
图 4. 体二极管正向电压变化与源极电流和温度
0.6
RDS(ON) [],
Drain to Source On-Resistance
2
*Notes:
1. VDS = 20V
2. 250s Pulse Test
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
100
VDS, Drain to Source Voltage [V]
© 2012 飞兆半导体公司
FCP260N60E / FCPF260N60E Rev. C4
Crss
6
4
2
0
600
3
VDS = 120V
VDS = 300V
VDS = 480V
8
*Note: ID = 7.5A
0
10
20
30
40
Qg, Total Gate Charge [nC]
50
www.fairchildsemi.com
FCP260N60E / FCPF260N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
典型性能特征
图 7. 击穿电压变化与温度
图 8. 导通电阻变化 vs. 温度
3.0
RDS(on), [Normalized]
Drain to Source On-Resistance
BVDSS, [Normalized]
Drain to Source Breakdown Voltage
1.15
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 10mA
0.90
0.85
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 7.5A
0.5
0.0
-100
ID, Drain Current [A]
100s
1ms
10ms
10
DC
Operation in This Area
is Limited by R DS(on)
10s
100s
1ms
10
10ms
1
Operation in This Area
is Limited by R DS(on)
o
1. TC = 25 C
0.1
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
o
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain to Source Voltage [V]
0.01
0.1
1000
图 11. 最大漏极电流与壳体温度的关系
1
10
100
VDS, Drain to Source Voltage [V]
1000
图 12. Eoss 与漏极－源极电压的关系
16
8
12
6
EOSS, [J]
ID, Drain Current [A]
DC
*Notes:
*Notes:
8
4
2
4
0
25
200
100
10s
0.1
0.1
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
图 10. 最大安全操作区 (FCPF260N60E)
100
ID, Drain Current [A]
2.0
200
图 9. 最大安全工作区(FCP260N60E)
1
2.5
50
75
100
125
o
TC, Case Temperature [ C]
© 2012 飞兆半导体公司
FCP260N60E / FCPF260N60E Rev. C4
0
150
4
0
100
200
300
400
500
VDS, Drain to Source Voltage [V]
600
www.fairchildsemi.com
FCP260N60E / FCPF260N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
典型性能特征 （接上页）
FCP260N60E / FCPF260N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
典型性能特征 （接上页）
图 13. 瞬态热响应曲线 (FCP260N60E)
ZJC
(t)，热响应
[oC/W] [ZJC]
Thermal
Response
2
1
0.5
0.2
0.1
PDM
0.1
t1
0.05
t2
*Notes:
0.02
0.01
Single pulse
o
1. ZJC(t) = 0.8 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.01
-5
10
-4
10
-3
-2
-1
10
10
Pulse Duration [sec]
tRectangular
1，矩形脉冲持续时间 [ 秒 ]
10
1
图 14. 瞬态热响应曲线 (FCPF260N60E)
ZJC
(t)，热响应
[oC/W] [Z ]
Thermal
Response
JC
5
0.5
1
0.2
0.1
PDM
0.05
t1
0.02
0.01
Single pulse
*Notes:
o
0.1
0.05
-5
10
t2
1. ZJC(t) = 3.5 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
-1
0
10
10
10
10
Pulse[ 秒
Duration
[sec]
t Rectangular
，矩形脉冲持续时间
]
1
10
100
1
© 2012 飞兆半导体公司
FCP260N60E / FCPF260N60E Rev. C4
5
www.fairchildsemi.com
FCP260N60E / FCPF260N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
IG = 常量
图 15. 栅极电荷测试电路与波形
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
VGS
DUT
10%
td(on)
tr
t on
td(off)
tf
t off
图 16. 阻性开关测试电路与波形
VGS
图 17. 非箝位感性开关测试电路与波形
© 2012 飞兆半导体公司
FCP260N60E / FCPF260N60E Rev. C4
6
www.fairchildsemi.com
FCP260N60E / FCPF260N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
图 18. 二极管恢复 dv/dt 峰值测试电路与波形
© 2012 飞兆半导体公司
FCP260N60E / FCPF260N60E Rev. C4
7
www.fairchildsemi.com
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
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Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
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