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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FCP290N80
N-Channel SuperFET® II MOSFET
800 V, 17 A, 0.29
Features
Description
• Typ. RDS(on) = 0.245
• Ultra Low Gate Charge (Typ. Qg = 58 nC)
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
• Low Eoss (Typ. 5.6 uJ @ 400 V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• AC-DC Power Supply
• LED Lighting
D
GD
S
G
TO-220
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
EAS
IAR
EAR
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
dv/dt
PD
Parameter
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
TL
(f >1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Power Dissipation
TJ, TSTG
S
FCP290N80
800
±20
±30
17
10.8
42
882
3.4
2.12
100
20
212
1.7
-55 to +150
Unit
V
W
W/oC
oC
300
oC
FCP290N80
Unit
V
A
A
mJ
A
mJ
V/ns
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
0.59
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2015 Fairchild Semiconductor Corporation
FCP290N80 Rev. 1.0
1
oC/W
www.fairchildsemi.com
FCP290N80 — N-Channel SuperFET® II MOSFET
December 2015
Part Number
FCP290N80
Top Mark
FCP290N80
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
800
-
-
V
ID = 1 mA, Referenced to 25 C
-
0.8
-
V/oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
-
-
25
250
±100
VGS = VDS, ID = 1.7 mA
VGS = 10 V, ID = 8.5 A
VDS = 20 V, ID = 8.5 A
2.5
-
-
0.245
20
4.5
0.290
-
V
S
-
2410
75
0.36
35
240
58
11
22
0.75
3205
100
75
-
pF
pF
pF
pF
pF
nC
nC
nC
-
22
14
61
2.6
54
38
132
15
ns
ns
ns
ns
-
511
12
17
42
1.2
-
A
A
V
ns
C
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
o
A
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 17 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 17 A,
VGS = 10 V, Rg = 4.7
(Note 4)
Drain-Source Diode Characteristics
IS
ISM
VSD
trr
Qrr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 17 A
Reverse Recovery Time
VGS = 0 V, ISD = 17 A,
dIF/dt = 100 A/s
Reverse Recovery Charge
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 3.4 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 17 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
©2015 Fairchild Semiconductor Corporation
FCP290N80 Rev. 1.0
2
www.fairchildsemi.com
FCP290N80 — N-Channel SuperFET® II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2015 Fairchild Semiconductor Corporation
FCP290N80 Rev. 1.0
3
www.fairchildsemi.com
FCP290N80 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics
Preliminary
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage
©2015 Fairchild Semiconductor Corporation
FCP290N80 Rev. 1.0
4
www.fairchildsemi.com
FCP290N80 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
FCP290N80 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
PDM
P
DM
tt11
tt22
©2015 Fairchild Semiconductor Corporation
FCP290N80 Rev. 1.0
5
www.fairchildsemi.com
FCP290N80 — N-Channel SuperFET® II MOSFET
IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
VGS
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCP290N80 Rev. 1.0
6
www.fairchildsemi.com
FCP290N80 — N-Channel SuperFET® II MOSFET
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCP290N80 Rev. 1.0
7
www.fairchildsemi.com
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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