Is Now Part of
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FCP380N60 / FCPF380N60
N-Channel SuperFET® II MOSFET
600 V, 10.2 A, 380 mΩ
Features
Description
• 650 V @ TJ = 150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the
switching power applications such as PFC, server/telecom
power, FPD TV power, ATX power and industrial power
applications.
• Typ. RDS(on) = 330 mΩ
• Ultra Low Gate Charge (Typ. Qg = 30 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
D
GD
S
G
G
D
S
TO-220
TO-220F
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FCP380N60 FCPF380N60
600
- DC
±20
- AC
(f > 1 Hz)
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
(Note 1)
V
±30
10.2
10.2*
6.4
6.4*
IDM
Drain Current
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
2.3
A
EAR
Repetitive Avalanche Energy
(Note 1)
1.06
mJ
30.6*
A
211.6
MOSFET dv/dt
mJ
100
Peak Diode Recovery dv/dt
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
30.6
A
EAS
dv/dt
- Pulsed
Unit
V
- Derate Above 25oC
V/ns
20
106
31
W
0.85
0.25
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FCP380N60
FCPF380N60
RθJC
Thermal Resistance, Junction to Case, Max.
1.18
4
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
62.5
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
1
Unit
oC/W
www.fairchildsemi.com
FCP380N60 / FCPF380N60 — N-Channel SuperFET® II MOSFET
November 2013
Part Number
FCP380N60
Top Mark
FCP380N60
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
FCPF380N60
FCPF380N60
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain to Source Avalanche Breakdown
Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
600
-
-
VGS = 0 V, ID = 10 mA, TJ = 150°C
-
650
-
ID = 10 mA, Referenced to 25oC
-
0.6
-
V/oC
VGS = 0 V, ID = 10 A
-
700
-
V
VDS = 480 V, VGS = 0 V
V
-
-
1
VDS = 480 V, TC = 125oC
-
-
10
VGS = ±20 V, VDS = 0 V
-
-
±100
2.5
-
3.5
V
-
0.33
0.38
Ω
-
11
-
S
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10 V, ID = 5 A
VDS = 20 V, ID = 5 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 380 V, VGS = 0 V, f = 1 MHz
Coss(eff.)
Effective Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
-
1250
1665
pF
-
905
1205
pF
-
45
60
pF
-
23
-
pF
VDS = 0 V to 480 V, VGS = 0V
-
95
-
pF
VDS = 380 V, ID = 5 A,
VGS = 10 V
-
30
40
nC
-
5
-
nC
VDS = 25 V, VGS = 0 V,
f = 1 MHz
(Note 4)
-
10
-
nC
f = 1 MHz
-
1
-
Ω
-
14
38
ns
VDD = 380 V, ID = 5 A,
VGS = 10 V, RG = 4.7 Ω
-
7
24
ns
-
45
100
ns
-
6
22
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
10.2
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
30.6
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 5 A
-
-
1.2
V
trr
Reverse Recovery Time
-
240
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 5 A,
dIF/dt = 100 A/μs
-
2.7
-
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 2.3 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 5.1 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
2
www.fairchildsemi.com
FCP380N60 / FCPF380N60 — N-Channel SuperFET® II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
VGS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
ID, Drain Current[A]
ID, Drain Current[A]
Figure 2. Transfer Characteristics
50
50
o
150 C
10
1
o
25 C
o
-55 C
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
0.1
0.1
1
VDS, Drain to Source Voltage[V]
1
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
7
VGS, Gate to Source Voltage[V]
100
IS, Reverse Drain Current [A]
1.0
0.8
0.6
VGS = 10V
0.4
VGS = 20V
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
0.2
*Note: TC = 25 C
0
5
10
15
20
ID, Drain Current [A]
25
1
0.3
30
Figure 5. Capacitance Characteristics
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
1.5
10
VGS
, Gate
to Source Voltage
VGS
, Gate-Source
Voltage[V]
[V]
Ciss
1000
Capacitances [pF]
2. 250μs Pulse Test
Figure 6. Gate Charge Characteristics
10000
100
Coss
10
1
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.2
RDS(ON) [Ω],
Drain to Source On-Resistance
3
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1
10
100
VDS, Drain to Source Voltage [V]
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
6
4
2
0
1000
3
VDS = 120V
VDS = 300V
VDS = 480V
8
*Note: ID = 5A
0
9
18
27
Qg, Total Gate Charge [nC]
36
www.fairchildsemi.com
FCP380N60 / FCPF380N60 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain to Source On-Resistance
BVDSS, [Normalized]
Drain to Source Breakdown Voltage
1.20
1.15
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 10mA
0.90
0.85
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
0.0
-100
200
Figure 9. Maximum Safe Operating Area
for FCP380N60
*Notes:
1. VGS = 10V
2. ID = 5A
0.5
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Safe Operating Area
for FCPF380N60
50
50
10μs
100μs
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
10μs
10
ID, Drain Current [A]
ID, Drain Current [A]
10
0.1
100μs
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
*Notes:
o
o
1. TC = 25 C
1. TC = 25 C
o
o
0.01
0.1
200
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain to Source Voltage [V]
0.01
0.1
1000
Figure 11. Maximum Drain Current
vs. Case Temperature
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain to Source Voltage [V]
1000
Figure 12. Eoss vs. Drain to Source Voltage
6
12
4
EOSS, [μJ]
ID, Drain Current [A]
5
9
6
3
2
3
1
0
25
50
75
100
125
o
TC, Case Temperature [ C]
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
0
150
4
0
100
200
300
400
500
VDS, Drain to Source Voltage [V]
600
www.fairchildsemi.com
FCP380N60 / FCPF380N60 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
FCP380N60 / FCPF380N60 — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve for FCP380N60
θJC
o
ZθJC
(t), Thermal
Response
Thermal
Response
[Z [ ]C/W]
2
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
*Notes:
0.02
o
0.01
1. ZθJC(t) = 1.18 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
-4
-3
10
-2
10
-1
10
0
10
10
Pulse Duration [sec]
tRectangular
1, Rectangular Pulse Duration [sec]
Figure 14. Transient Thermal Response Curve for FCPF380N60
ZθJC(t), Thermal Response [oC/W]
Thermal Response [ZθJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
0.01
o
1. ZθJC(t) = 4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
t2
*Notes:
-4
10
-3
-2
-1
10
10
10
1
[sec]
tRectangular
, RectangularPulse
PulseDuration
Duration [sec]
10
100
1
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
5
www.fairchildsemi.com
FCP380N60 / FCPF380N60 — N-Channel SuperFET® II MOSFET
IG = const.
Figure 15. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 16. Resistive Switching Test Circuit & Waveforms
VGS
Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
6
www.fairchildsemi.com
FCP380N60 / FCPF380N60 — N-Channel SuperFET® II MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C6
7
www.fairchildsemi.com
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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