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FCP380N60E / FCPF380N60E
N 沟道 SuperFET® II Easy-Drive MOSFET
600 V, 10.2 A, 380 m
特性
说明
• 650 V @ TJ = 150°C
SuperFET® II MOSFET 是飞兆半导体新一代利用电荷平衡技术
实现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓越
的 开关 性 能、 dv/dt
额 定值 和 更高 雪 崩能 量。类似 地，与
SuperFET II MOSFET 系列相比， SuperFET II MOSFET EasyDrive 系列具有略为缓慢的上升和下降时间。该系列产品型号以
“E” 作为前缀，有助于解决 EMI 问题，设计部署更为简单。如需
获得更快的开关速度并用于开关损耗必须尽可能低的应用中，请
考虑使用 SuperFET II MOSFET 系列。
• 典型值 RDS(on) = 320 m
• 超低栅极电荷 （典型值 Qg = 34 nC)
• 低有效输出电容 （典型值 Coss(eff.)= 97 pF)
• 100% 经过雪崩测试
• 集成栅极电阻
• 符合 RoHS 标准
应用
• LCD / LED / PDP 电视照明
• 太阳能逆变器
• AC-DC 电源
D
GD
S
G
G
D
S
TO-220
TO-220F
S
绝对最大额定值 TC = 25°C 除非另有说明。
FCP380N60E FCPF380N60E
600
符号
VDSS
参数
漏极－源极电压
VGSS
栅极－源极电压
ID
漏极电流
- 连续 (TC = 25°C)
10.2
10.2*
- 连续 (TC = 100°C)
6.4
6.4*
IDM
漏极电流
- 脉冲
- DC
±20
- AC
(f > 1 Hz)
（说明 1）
V
±30
30.6
单位
V
A
30.6*
A
211.6
mJ
EAS
单脉冲雪崩能量
（说明 2）
IAR
雪崩电流
（说明 1）
2.3
A
重复雪崩能量
MOSFET dv/dt
（说明 1）
1.06
mJ
二极管恢复 dv/dt 峰值
（说明 3）
EAR
dv/dt
100
(TC = 25°C)
106
31
W
- 降低至 25°C 以上
0.85
0.25
W/°C
PD
功耗
TJ, TSTG
工作和存储温度范围
用于焊接的最大引线温度，距离外壳 1/8"，持续 5 秒
TL
V/ns
20
-55 至 +150
°C
300
°C
* 漏极电流受限于最大结温
热性能
符号
FCP380N60E FCPF380N60E
参数
RJC
结至外壳热阻最大值
1.18
4
RJA
结至环境热阻最大值
62.5
62.5
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
1
单位
°C/W
www.fairchildsemi.com
FCP380N60E / FCPF380N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
2014 年 2 月
器件编号
FCP380N60E
顶标
FCP380N60E
封装
TO-220
包装方法
塑料管
卷尺寸
不适用
带宽
不适用
数量
50 个
FCPF380N60E
FCPF380N60E
TO-220F
塑料管
不适用
不适用
50 个
电气特性， TC = 25oC 除非另有说明。
符号
参数
测试条件
最小值
典型值
最大值
单位
关断特性
VGS = 0 V, ID = 10 mA, TJ = 25°C
600
-
-
VGS = 0 V, ID = 10 mA, TJ = 150°C
650
-
-
-
0.67
-
V/°C
VGS = 0 V, ID = 10 A
-
700
-
V
VDS = 480 V, VGS = 0 V
-
-
1
VDS = 480 V, TC = 125°C
-
-
10
-
±100
BVDSS
漏极－源极击穿电压
BVDSS
/ TJ
BVDS
击穿电压温度系数
ID=10 mA，参考条件为 25°C
漏极 - 源极雪崩击穿电压
V
A
IDSS
零栅极电压漏极电流
IGSS
栅极 - 体漏电流
VGS = ±20 V, VDS = 0 V
-
VGS(th)
RDS(on)
栅极阈值电压
VGS = VDS, ID = 250 A
2.5
-
3.5
V
漏极至源极静态导通电阻
-
0.32
0.38
gFS
正向跨导
VGS = 10 V, ID = 5 A
VDS = 20 V, ID = 5 A
-
10
-
S
nA
导通特性
动态特性
Ciss
输入电容
Coss
输出电容
Crss
反向传输电容
Coss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
1330
1770
pF
-
945
1260
pF
-
60
90
pF
输出电容
VDS = 380 V, VGS = 0 V, f = 1 MHz
-
25
-
pF
Coss(eff.)
有效输出电容
VDS = 0 V 至 480 V, VGS = 0 V
-
97
-
pF
Qg(tot)
10 V 的栅极电荷总量
34
45
nC
栅极 - 源极栅极电荷
VDS = 380 V, ID = 5 A,
VGS = 10 V
-
Qgs
-
5.3
-
nC
Qgd
栅极 - 漏极 “ 米勒 ” 电荷
-
13
-
nC
ESR
等效串联电阻
-
6
-
-
17
44
ns
-
9
28
ns
-
64
138
ns
-
10
30
ns
（说明 4）
f = 1 MHz
开关特性
td(on)
导通延迟时间
tr
开通上升时间
td(off)
关断延迟时间
tf
关断下降时间
VDD = 380 V, ID = 5 A,
VGS = 10 V, R = 4.7
（说明 4）
漏极 - 源极二极管特性
IS
漏极 - 源极二极管最大正向连续电流
-
-
10.2
A
ISM
漏极 - 源极二极管最大正向脉冲电流
-
-
30.6
A
VSD
漏极 - 源极二极管正向电压
VGS = 0 V, ISD = 5 A
-
-
1.2
V
trr
反向恢复时间
-
240
-
ns
Qrr
反向恢复电荷
VGS = 0 V, ISD = 5 A,
dIF/dt = 100 A/s
-
3
-
C
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. IAS = 2.3 A， VDD = 50 V， RG = 25 ，启动 TJ = 25°C。
3. ISD 5.1 A， di/dt 200 A/s， VDD BVDSS，启动 TJ = 25°C。
4. 本质上独立于工作温度的典型特性。
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
2
www.fairchildsemi.com
FCP380N60E / FCPF380N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
封装标识与定购信息
图 1. 通态区域特性
图 2. 传递特性
50
VGS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
ID, Drain Current[A]
ID, Drain Current[A]
50
1
10
o
150 C
o
25 C
1
o
-55 C
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
0.1
0.1
1
VDS, Drain to Source Voltage[V]
10
0.1
20
图 3. 导通电阻变化与漏极电流和栅极电压
4
6
8
VGS, Gate to Source Voltage[V]
100
IS, Reverse Drain Current [A]
0.7
0.6
0.5
VGS = 10V
0.4
VGS = 20V
0.3
o
150 C
10
o
25 C
*Notes:
1. VGS = 0V
o
0.2
*Note: TC = 25 C
0
5
10
15
20
ID, Drain Current [A]
25
1
0.2
30
图 5. 电容特性
2. 250s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage [V]
1.6
图 6. 栅极电荷特性
10
VGS, Gate to Source Voltage [V]
10000
Ciss
1000
Capacitances [pF]
10
图 4. 体二极管正向电压变化与源极电流和温度
0.8
RDS(ON) [],
Drain to Source On-Resistance
2
100
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.5
0.1
1
10
100
VDS, Drain to Source Voltage [V]
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
Crss
0
600
3
*Note: ID = 5A
0
5
10
15
20
25
Qg, Total Gate Charge [nC]
30
35
www.fairchildsemi.com
FCP380N60E / FCPF380N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
典型性能特征
图 7. 击穿电压变化与温度
图 8. 导通电阻变化与温度
3.0
RDS(on), [Normalized]
Drain to Source On-Resistance
BVDSS, [Normalized]
Drain to Source Breakdown Voltage
1.15
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 10mA
0.90
0.85
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
0.0
-100
200
图 9. 最大安全工作区(FCP380N60E)
100s
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
10s
10
ID, Drain Current [A]
ID, Drain Current [A]
10s
100s
1ms
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
*Notes:
o
2. TJ = 150 C
3. Single Pulse
o
2. TJ = 150 C
3. Single Pulse
0.01
0.1
1000
6
10
5
8
4
6
1000
3
4
2
2
1
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
1
10
100
VDS, Drain to Source Voltage [V]
图 12. Eoss 与漏极－源极电压的关系
12
EOSS, [J]
ID, Drain Current [A]
图 11. 最大漏极电流与壳体温度的关系
50
75
100
125
o
TC, Case Temperature [ C]
DC
1. TC = 25 C
o
1
10
100
VDS, Drain to Source Voltage [V]
10ms
o
1. TC = 25 C
0
25
200
50
10
0.1
0.1
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
图 10. 最大安全操作区 (FCPF380N60E)
50
1
*Notes:
1. VGS = 10V
2. ID = 5A
0.5
0
150
4
0
100
200
300
400
500
VDS, Drain to Source Voltage [V]
600
www.fairchildsemi.com
FCP380N60E / FCPF380N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
典型性能特征 （接上页）
FCP380N60E / FCPF380N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
典型性能特征 （接上页）
图 13. 瞬态热响应曲线 (FCP380N60E)
ZJC
(t)，热响应
[oC/W] [ZJC]
Thermal
Response
2
1
0.5
PDM
0.2
t1
0.1
0.1
t2
*Notes:
0.05
0.02
0.01
Single pulse
o
1. ZJC(t) = 1.18 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.05
-5
10
-4
10
-3
-2
10
10
Rectangular
Pulse Duration
[sec]
t1，矩形脉冲持续时间
[秒]
-1
10
1
图 14. 瞬态热响应曲线 (FCPF380N60E)
ZThermal
[oC/W] [ZJC]
Response
JC(t)，热响应
5
0.5
1
0.2
0.1
PDM
0.05
0.1
0.05
-5
10
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
t1
*Notes:
0.02
0.01
Single pulse
t2
o
1. ZJC(t) = 4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
-1
10
10
10
1
Pulse Duration [sec]
tRectangular
1，矩形脉冲持续时间 [ 秒 ]
5
10
100
www.fairchildsemi.com
FCP380N60E / FCPF380N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
IG = 常量
图 15. 栅极电荷测试电路与波形
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
VGS
DUT
10%
td(on)
tr
t on
td(off)
tf
t off
图 16. 阻性开关测试电路与波形
VGS
图 17. 非箝位感性开关测试电路与波形
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
6
www.fairchildsemi.com
FCP380N60E / FCPF380N60E — N 沟道 SuperFET® II Easy-Drive MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
图 18. 二极管恢复 dv/dt 峰值测试电路与波形
© 2012 飞兆半导体公司
FCP380N60E / FCPF380N60E Rev. C8
7
www.fairchildsemi.com
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
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