Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
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device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FCP600N60Z / FCPF600N60Z
N 沟道 SuperFET® II MOSFET
600 V, 7.4 A, 600 m
特性
说明
• 650 V @ TJ = 150°C
SuperFET® II MOSFET 是飞兆半导体新一代利用电荷平衡技术
实现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓越
的开关性能、 dv/dt 额定值和更高雪崩能量。因此， SuperFET
MOSFET 非常适合开关电源应用，如功率因数校正 (PFC)、服务
器 / 电信电源、平板电视电源、 ATX 电源及工业电源应用。
• 典型值 RDS(on) = 510 m
• 超低栅极电荷 （典型值 Qg = 20 nC)
• 低有效输出电容 （典型值 Coss(eff.)= 74 pF)
• 100% 经过雪崩测试
• 提高静电放电保护能力
• 符合 RoHS 标准
应用
• LCD / LED / PDP 电视和显示器灯光
• 光伏逆变器
• AC-DC 电源
D
GD
S
G
G
D
S
TO-220
TO-220F
S
绝对最大额定值 TC = 25°C 除非另有说明。
符号
VDSS
漏极－源极电压
参数
VGSS
栅极－源极电压
ID
漏极电流
FCP600N60Z FCPF600N60Z
600
单位
V
±20
V
- DC
- AC
(f > 1 Hz)
±30
V
- 连续 (TC = 25°C)
7.4
7.4*
- 连续 (TC = 100°C)
4.7
4.7*
IDM
Drain Current
EAS
单脉冲雪崩能量
（说明 2）
IAR
雪崩电流
（说明 1）
1.5
A
EAR
重复雪崩能量
MOSFET dv/dt
（说明 1）
0.89
mJ
二极管恢复 dv/dt 峰值
（说明 3）
dv/dt
- Pulsed
22.2
22.2*
A
135
mJ
100
(TC = 25°C)
PD
功耗
TJ， TSTG
工作和存储温度范围
用于焊接的最大引线温度，距离外壳 1/8"，持续 5 秒
TL
（说明 1）
A
- 降低至 25°C 以上
V/ns
20
89
28
W
0.71
0.22
W/°C
-55 至 +150
°C
300
°C
* 漏极电流受限于最大结温
热性能
符号
RJC
FCP600N60Z
FCPF600N60Z
结至外壳热阻最大值
1.4
4.5
RJA
结至环境热阻最大值
62.5
62.5
参数
© 2012 飞兆半导体公司
FCP600N60Z / FCPF600N60Z Rev. C3
1
单位
°C/W
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z — N 沟道 SuperFET® II MOSFET
2014 年 2 月
器件编号
FCP600N60Z
顶标
FCP600N60Z
封装
TO-220
包装方法
塑料管
卷尺寸
不适用
带宽
不适用
数量
50 个
FCPF600N60Z
FCPF600N60Z
TO-220F
塑料管
不适用
不适用
50 个
电气特性 TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值
典型值
最大值
单位
VGS = 0 V, ID = 10 mA, TJ = 25°C
600
-
-
VGS = 0 V, ID = 10 mA, TJ = 150°C
650
-
-
-
0.67
-
V/°C
V
关断特性
BVDSS
漏极－源极击穿电压
BVDSS
/ TJ
BVDS
击穿电压温度系数
ID=10 mA，参考条件为 25°C
漏极 - 源极雪崩击穿电压
VGS = 0 V, ID = 7.4 A
-
700
-
VDS = 480 V, VGS = 0 V
-
-
1
VDS = 480 V, TC = 125°C
-
-
10
-
±10
V
A
IDSS
零栅极电压漏极电流
IGSS
栅极 - 体漏电流
VGS = ±20 V, VDS = 0 V
-
VGS(th)
RDS(on)
栅极阈值电压
VGS = VDS, ID = 250 A
2.5
-
3.5
V
漏极至源极静态导通电阻
-
0.51
0.6
gFS
正向跨导
VGS = 10 V, ID = 3.7 A
VDS = 20 V, ID = 3.7 A
-
6.7
-
S
-
840
1120
pF
-
630
840
pF
-
30
45
pF
uA
导通特性
动态特性
Ciss
输入电容
Coss
输出电容
Crss
反向传输电容
Coss
输出电容
VDS = 380 V, VGS = 0 V, f = 1 MHz
-
16.5
-
pF
Coss(eff.)
有效输出电容
VDS = 0 V 至 480 V, VGS = 0 V
-
74
-
pF
VDS = 380 V, ID = 3.7 A,
VGS = 10 V
-
20
26
nC
-
3.4
-
nC
-
7.5
-
nC
-
2.89
-
-
13
36
ns
-
7
24
ns
-
39
88
ns
-
9
28
ns
Qg(tot)
10 V 的栅极电荷总量
Qgs
栅极 - 源极栅极电荷
Qgd
栅极 - 漏极 “ 米勒 ” 电荷
ESR
等效串联电阻
VDS = 25 V, VGS = 0 V,
f = 1 MHz
（说明 4）
f = 1 MHz
开关特性
td(on)
tr
导通延迟时间
开通上升时间
td(off)
关断延迟时间
tf
关断下降时间
VDD = 380 V, ID = 3.7 A,
VGS = 10 V, RG = 4.7
（说明 4）
漏极 - 源极二极管特性
IS
漏极 - 源极二极管最大正向连续电流
-
-
7.4
A
ISM
漏极 - 源极二极管最大正向脉冲电流
-
-
22.2
A
VSD
漏极 - 源极二极管正向电压
VGS = 0 V, ISD = 3.7 A
-
-
1.2
V
trr
反向恢复时间
-
200
-
ns
Qrr
反向恢复电荷
VGS = 0 V, ISD = 3.7 A,
dIF/dt = 100 A/s
-
2.3
-
C
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. IAS = 1.5 A， VDD = 50 V， RG = 25 ，启动 TJ = 25°C。
3. ISD 3.7 A， di/dt 200 A/s， VDD BVDSS，启动 TJ = 25°C。
4. 本质上独立于工作温度的典型特性。
© 2012 飞兆半导体公司
FCP600N60Z / FCPF600N60Z Rev. C3
2
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z — N 沟道 SuperFET® II MOSFET
封装标识与定购信息
图 1. 导通区域特性
图 2. 传输特性
50
20
VGS = 10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain Current[A]
ID, Drain Current[A]
10
*Notes:
1. VDS = 20V
2. 250s Pulse Test
1
10
o
25 C
o
o
150 C
1
-55 C
*Notes:
1. 250s Pulse Test
o
2. TC = 25 C
0.4
0.2
1
10
VDS
，漏极 - 源极电压
[V]
VDS
, Drain-Source
Voltage[V]
0.2
20
图 3. 导通电阻变化与漏极电流和栅极电压
3
4
5
8
IS, Reverse Drain Current [A]
VGS = 10V
0.6
VGS = 20V
10
o
150 C
*Note: TC = 25 C
0
5
10
15
ID, Drain Current [A]
*Notes:
1. VGS = 0V
1
0.4
20
图 5. 电容特性
o
25 C
o
2. 250s Pulse Test
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.4
图 6. 栅极电荷特性
10000
VGS, Gate to Source Voltage [V]
10
Ciss
1000
Capacitances [pF]
7
50
0.9
0.3
6
VV
，栅极 - 源极电压 [V]
GS
GS, Gate-Source Voltage[V]
图 4. 体二极管正向电压变化与源极电流和温度
1.2
RDS(ON) [],
Drain to Source On-Resistance
2
100
*Note:
1. VGS = 0V
2. f = 1MHz
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.5
0.1
1
10
100
VDS, Drain to Source Voltage [V]
© 2012 飞兆半导体公司
FCP600N60Z / FCPF600N60Z Rev. C3
Coss
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
Crss
0
600
3
*Note: ID = 3.7A
0
5
10
15
20
Qg, Total Gate Charge [nC]
25
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z — N 沟道 SuperFET® II MOSFET
典型性能特征
图 7. 击穿电压变化与温度
图 8. 导通电阻变化与温度
3.0
RDS(on), [Normalized]
Drain to Source On-Resistance
BVDSS, [Normalized]
Drain to Source Breakdown Voltage
1.15
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 10mA
0.90
0.85
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 3.7A
0.5
Operation in This Area
is Limited by R DS(on)
*Notes:
o
1. TC = 25 C
10
ID, Drain Current [A]
10s
100s
1ms
10ms
10s
100s
1ms
1
Operation in This Area
is Limited by R DS(on)
o
o
2. TJ = 150 C
3. Single Pulse
0.01
0.1
1000
图 11. 最大漏极电流与壳体温度的关系
1
10
100
VDS, Drain to Source Voltage [V]
1000
图 12. Eoss 与漏极－源极电压的关系
8
4
6
3
EOSS, [J]
ID, Drain Current [A]
DC
1. TC = 25 C
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain to Source Voltage [V]
10ms
*Notes:
0.1
DC
o
4
2
0
25
200
50
10
0.1
0.1
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
图 10. 最大安全操作区 (FCPF600N60Z)
50
ID, Drain Current [A]
2.0
0.0
-100
200
图 9. 最大安全工作区 (FCP600N60Z)
1
2.5
2
1
50
75
100
125
o
TC, Case Temperature [ C]
© 2012 飞兆半导体公司
FCP600N60Z / FCPF600N60Z Rev. C3
0
150
4
0
100
200
300
400
500
VDS, Drain to Source Voltage [V]
600
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z — N 沟道 SuperFET® II MOSFET
典型性能特征 （接上页）
FCP600N60Z / FCPF600N60Z — N 沟道 SuperFET® II MOSFET
典型性能特征 （接上页）
图 13. 瞬态热响应曲线 (FCP600N60Z)
o
ZJC(t), Thermal Response [ C/W]
2
1
0.5
PDM
t1
0.2
0.1
t2
*Notes:
0.05
o
1. ZJC(t) = 1.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.02
0.01
Single pulse
0.1
-5
10
-4
10
-3
-2
10
10
t1, Rectangular Pulse Duration [sec]
-1
0
10
10
图 14. 瞬态热响应曲线 (FCPF600N60Z)
ZJC
(t)，热响应
[oC/W] [Z ]
Thermal
Response
JC
5
0.5
1
0.2
PDM
0.1
0.05
0.02
0.01
Single pulse
t1
t2
*Notes:
o
1. ZJC(t) = 4.5 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.1
-5
10
© 2012 飞兆半导体公司
FCP600N60Z / FCPF600N60Z Rev. C3
-4
10
-3
-2
-1
0
10
10
10
10
Pulse[ 秒
Duration
[sec]
t1Rectangular
，矩形脉冲持续时间
]
5
1
10
100
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z — N 沟道 SuperFET® II MOSFET
IG = 常量
图 15. 栅极电荷测试电路与波形
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
VGS
DUT
10%
td(on)
tr
t on
td(off)
tf
t off
图 16. 阻性开关测试电路与波形
VGS
图 17. 非箝位感性开关测试电路与波形
© 2012 飞兆半导体公司
FCP600N60Z / FCPF600N60Z Rev. C3
6
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z — N 沟道 SuperFET® II MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
图 18. 二极管恢复 dv/dt 峰值测试电路与波形
© 2012 飞兆半导体公司
FCP600N60Z / FCPF600N60Z Rev. C3
7
www.fairchildsemi.com
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
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