FCPF067N65S3
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 44 A, 67 mW
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Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
VDSS
RDS(ON) MAX
ID MAX
650 V
67 mW @ 10 V
44 A
D
Features
•
•
•
•
•
•
700 V @ TJ = 150°C
Typ. RDS(on) = 59 mW
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
G
S
POWER MOSFET
Applications
•
•
•
•
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
G
D
S
TO−220F
CASE 221AT
MARKING DIAGRAM
$Y&Z&3&K
FCPF
067N65S3
$Y
&Z
&3
&K
FCPF067N65S3
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
August, 2019 − Rev. 3
1
Publication Order Number:
FCPF067N65S3/D
FCPF067N65S3
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
FCPF067N65S3
Unit
650
V
− DC
±30
V
− AC (f > 1 Hz)
±30
− Continuous (TC = 25°C)
44*
− Continuous (TC = 100°C)
28*
− Pulsed (Note 1)
A
IDM
Drain Current
110*
A
EAS
Single Pulsed Avalanche Energy (Note 2)
214
mJ
IAS
Avalanche Current (Note 2)
4.8
A
EAR
Repetitive Avalanche Energy (Note 1)
0.46
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
46
W
0.37
W/°C
−55 to +150
°C
300
°C
− Derate Above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4.8 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 22 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
FCPF067N65S3
Unit
_C/W
RqJC
Thermal Resistance, Junction to Case, Max.
2.7
RqJA
Thermal Resistance, Junction to Ambient, Max.
62.5
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
FCPF067N65S3
FCPF067N65S3
TO−220F
Tube
N/A
N/A
50 Units
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2
FCPF067N65S3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
−
−
V
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
−
−
V
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS / DTJ
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, Referenced to 25_C
−
0.72
−
V/_C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
−
−
1
mA
VDS = 520 V, TC = 125_C
−
2.2
−
IGSS
Gate to Body Leakage Current
VGS = ±30 V, VDS = 0 V
−
−
±100
nA
2.5
−
4.5
V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 0.99 mA
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 22 A
−
59
67
mW
Forward Transconductance
VDS = 20 V, ID = 22 A
−
29
−
S
VDS = 400 V, VGS = 0 V, f = 1 MHz
−
3090
−
pF
−
68
−
pF
gFS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
715
−
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
104
−
pF
Total Gate Charge at 10 V
VDS = 400 V, ID = 22 A, VGS = 10 V
(Note 4)
−
78
−
nC
−
18
−
nC
Qg(tot)
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
−
30
−
nC
f = 1 MHz
−
0.6
−
W
VDD = 400 V, ID = 22 A, VGS = 10 V,
Rg = 4.7 W
(Note 4)
−
26
−
ns
−
52
−
ns
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
−
89
−
ns
Turn-Off Fall Time
−
16
−
ns
Maximum Continuous Source to Drain Diode Forward Current
−
−
44
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
−
−
110
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 22 A
−
−
1.2
V
trr
Reverse Recovery Time
−
435
−
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 22 A,
dIF/dt = 100 A/ms
−
9.2
−
mC
tf
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FCPF067N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
10
1
0.3
VDS = 20 V
250 ms Pulse Test
100
ID, Drain Current (A)
ID, Drain Current (A)
VGS = 10.0 V
8.0 V
100
7.0 V
6.5 V
6.0 V
5.5 V
25°C
−55°C
250 ms Pulse Test
TC = 25°C
1
20
1
10
VDS, Drain−Source Voltage (V)
150°C
10
2
Figure 1. On−Region Characteristics
200
TC = 25°C
0.20
0.15
0.10
VGS = 10 V
VGS = 20 V
0.05
0.00
0
30
90
60
ID, Drain Current (A)
10
VGS, Gate−Source Voltage (V)
Capacitances (pF)
Ciss
Coss
0.1
0.1
VGS = 0 V
f = 1 MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Crss
1
10
100
VDS, Drain−Source Voltage (V)
0.3
1.2
1.5
0.6
0.9
VSD, Body Diode Forward Voltage (V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
10
100
25°C
−55°C
0.1
0.0
120
1000
1
150°C
1
100000
10
VGS = 0 V
250 ms Pulse Test
100
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
10000
7
Figure 2. Transfer Characteristics
IS, Reverse Drain Current (A)
RDS(ON), Drain−Source
On−Resistance (W)
0.25
3
4
5
6
VGS, Gate−Source Voltage (V)
8
Figure 5. Capacitance Characteristics
VDS = 130 V
VDS = 400 V
6
4
2
0
1000
ID = 22 A
0
20
40
60
80
Qg, Total Gate Charge (nC)
100
Figure 6. Gate Charge Characteristics
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4
FCPF067N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
3.0
VGS = 0 V
ID = 1 mA
RDS(on), Drain−Source
On−Resistance (Normalized)
BVDSS, Drain−Source
Breakdown Voltage (Normalized)
1.2
1.1
1.0
0.9
0.8
−50
2.5
2.0
1.5
1.0
0.5
0.0
50
100
150
0
TJ, Junction Temperature (5C)
40
ID, Drain Current (A)
ID, Drain Current (A)
100 ms
1 ms
10 ms
DC
1
Operation in this Area
is Limited by RDS(on)
0.1
0.01
10
100
VDS, Drain−Source Voltage (V)
16
EOSS, (mJ)
50
75
100
125
TC, Case Temperature (5C)
150
Figure 10. Maximum Drain Current
vs. Case Temperature
20
12
8
4
0
20
0
25
1000
Figure 9. Maximum Safe Operating Area
0
30
10
TC = 25°C
TJ = 150°C
Single Pulse
1
0
50
100
150
TJ, Junction Temperature (5C)
50
10 ms
10
−50
Figure 8. On−Resistance Variation
vs. Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
200
100
VGS = 10 V
ID = 22 A
100 200 300 400 500 600 650
VDS, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCPF067N65S3
r(t), Normalized Effective Transient
Thermal Resistance
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2
1
0.1
0.01
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
1E−3
1E−4
−5
10
SINGLE PULSE
10
−4
t2
ZqJC(t) = r(t) x RqJC
RqJC = 2.7°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
10
−3
−2
−1
10
10
t, Rectangular Pulse Duration (sec)
10
0
Figure 12. Transient Thermal Response Curve
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6
10
1
10
2
FCPF067N65S3
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
td(off)
ton
tf
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
FCPF067N65S3
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 3−Lead / TO−220F−3SG
CASE 221AT
ISSUE B
DATE 19 JAN 2021
Scale 1:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON67439E
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−220 FULLPACK, 3−LEAD / TO−220F−3SG
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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