FCPF11N65
N-Channel SuperFET® MOSFET
650 V, 11 A, 380 mΩ
Features
Description
• Typ. RDS(on) = 320 mΩ
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
• Ultra Low Gate Charge (Typ. Qg = 40 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
• 100% Avalanche Tested
D
G
G
D
S
TO-220F
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source Voltage
(Note 1)
FCPF11N65
Unit
650
V
11*
7*
A
A
33
A
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
340
mJ
IAR
Avalanche Current
(Note 1)
11
A
EAR
Repetitive Avalanche Energy
(Note 1)
12.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
36
0.29
W
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
°C
(TC = 25°C)
- Derate Above 25°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
FCPF11N65
Unit
RθJC
Symbol
Thermal Resistance, Junction-to-Case
Parameter
3.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
©2005 Fairchild Semiconductor Corporation
FCPF11N65 Rev. C0
1
www.fairchildsemi.com
FCPF11N65 — N-Channel SuperFET® MOSFET
February 2015
Part Number
FCPF11N65
Top Mark
FCPF11N65
Electrical Characteristics
Symbol
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
TC = 25°C unless otherwise noted.
Parameter
Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA, TJ = 25°C
650
--
--
V
VGS = 0 V, ID = 250 μA, TJ = 150°C
--
700
--
V
ID = 250 μA, Referenced to 25°C
--
0.6
--
V/°C
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0 V, ID = 11 A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.5 A
--
0.32
0.38
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 5.5 A
--
9.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1148
1490
pF
--
671
870
pF
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
--
63
--
pF
--
35
--
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
--
95
--
pF
VDD = 300 V, ID = 11 A,
RG = 25 Ω
--
34
80
ns
--
98
205
ns
--
119
250
ns
--
56
120
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4)
VDS = 480 V, ID = 11 A,
VGS = 10 V
(Note 4)
--
40
52
nC
--
7.2
--
nC
--
21
--
nC
11
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
33
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 11 A
--
--
1.4
V
trr
Reverse Recovery Time
390
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 11 A
dIF/dt =100 A/μs
--
Qrr
--
5.7
--
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 11 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2005 Fairchild Semiconductor Corporation
FCPF11N65 Rev. C0
2
www.fairchildsemi.com
FCPF11N65 — N-Channel SuperFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
1
ID , Drain Current [A]
ID, Drain Current [A]
Top :
0
10
10
o
150 C
o
o
25 C
0
10
-55 C
* Note
1. VDS = 40V
2. 250 μs Pulse Test
* Notes :
1. 250 μs Pulse Test
o
2. TC = 25 C
-1
10
-1
10
-1
0
10
2
1
10
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
1.0
0.8
VGS = 10V
0.6
VGS = 20V
0.4
0.2
1
10
0
10
o
o
150 C
25 C
* Notes :
1. VGS = 0V
2. 250 μs Pulse Test
o
* Note : TJ = 25 C
0.0
-1
0
5
10
15
20
25
30
35
10
40
0.2
0.4
0.6
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Capacitance [pF]
1000
0
-1
10
Coss
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
Crss
0
10
1.6
1
10
VDS = 250V
10
VDS = 400V
8
6
4
2
* Note : ID = 11A
0
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2005 Fairchild Semiconductor Corporation
FCPF11N65 Rev. C0
1.4
VDS = 100V
4000
2000
1.2
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
1.0
Figure 6. Gate Charge Characteristics
6000
5000
0.8
VSD , Source-Drain Voltage [V]
3
www.fairchildsemi.com
FCPF11N65 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 5.5 A
0.5
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
12.5
2
10
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
ID, Drain Current [A]
10.0
100 us
1
10
1 ms
10 ms
100 ms
0
10
DC
* Notes :
o
1. TC = 25 C
-1
10
-2
0
10
5.0
2.5
o
2. TJ = 150 C
3. Single Pulse
10
7.5
1
2
10
0.0
25
3
10
10
50
75
100
125
150
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Z (t), Thermal Response
θJC
ZθJC(t)
, Thermal Response [oC/W]
Figure 11. Transient Thermal Resistance Curve
D = 0 .5
10
0
0 .2
0 .1
* N o te s :
o
1 . Z θ J C ( t) = 3 .5 C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 5
10
-1
0 .0 2
0 .0 1
PDM
t1
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t1, S
u a r e W a v ePulse
P u ls eDuration
D u r a tio
n [s e c ]
t1q, Rectangular
[sec]
©2005 Fairchild Semiconductor Corporation
FCPF11N65 Rev. C0
4
www.fairchildsemi.com
FCPF11N65 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics (Continued)
FCPF11N65 — N-Channel SuperFET® MOSFET
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
tp
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FCPF11N65 Rev. C0
5
www.fairchildsemi.com
FCPF11N65 — N-Channel SuperFET® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2005 Fairchild Semiconductor Corporation
FCPF11N65 Rev. C0
6
www.fairchildsemi.com
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.74
2.34
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
0.60
0.45
NOTES:
4.90
4.50
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV3
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Definition of Terms
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First Production
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I73
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