FCPF360N65S3R0L

FCPF360N65S3R0L MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. www.onsemi.com VDSS RDS(ON) MAX ID MAX 650 V 360 mW @ 10 V 10 A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 310 mW Ultra Low Gate Charge (Typ. Qg = 18 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant G S N-Channel MOSFET Applications • • • • Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter G D S TO−220F CASE 340BF MARKING DIAGRAM $Y&Z&3&K FCPF360 N65S3R0 $Y &Z &3 &K FCPF360N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 3 1 Publication Order Number: FCPF360N65S3R0L/D FCPF360N65S3R0L ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 10* A Continuous (TC = 100°C) 6* Pulsed (Note 1) IDM Drain Current 25* A EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAS Avalanche Current (Note 2) 2.1 A EAR Repetitive Avalanche Energy (Note 1) 0.27 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 27 W 0.22 W/°C −55 to +150 °C 300 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.1 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit _C/W RqJC Thermal Resistance, Junction to Case, Max. 4.56 RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCPF360N65S3R0L FCPF360N65S3R0 TO−220F Tube N/A N/A 50 Units www.onsemi.com 2 FCPF360N65S3R0L ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C − 0.68 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 1 mA VDS = 520 V, TC = 125_C − 0.58 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA 2.5 − 4.5 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.2 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 5 A − 310 360 mW Forward Transconductance VDS = 20 V, ID = 5 A − 6 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 730 − pF − 15 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 173 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 26 − pF Total Gate Charge at 10 V VDS = 400 V, ID = 5 A, VGS = 10 V (Note 4) − 18 − nC − 4.3 − nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 7.6 − nC f = 1 MHz − 1 − W VDD = 400 V, ID = 5 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 12 − ns − 11 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 34 − ns Turn-Off Fall Time − 10 − ns Maximum Continuous Source to Drain Diode Forward Current − − 10 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 25 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 5 A − − 1.2 V trr Reverse Recovery Time − 241 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 5 A, dIF/dt = 100 A/ms − 2.4 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCPF360N65S3R0L TYPICAL PERFORMANCE CHARACTERISTICS ID, Drain Current[A] 10 50 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V ID, Drain Current[A] 50 1 *Notes: 1. VDS = 20V 2. 250 ms Pulse Test 10 o 150 C o 25 C 1 o −55 C *Notes: 1. 250 ms Pulse Test o 2. TC = 25 C 0.1 0.2 1 10 VDS, Drain−Source Voltage[V] 0.1 20 2 Figure 1. On-Region Characteristics *Notes: 1. VGS = 0V 1.0 0.8 0.6 VGS = 10V VGS = 20V 0.2 0.0 0 5 10 15 20 ID, Drain Current [A] 25 10 o 1 o 25 C 0.1 o VGS, Gate−Source Voltage [V] Capacitances [pF] 10000 1 Ciss Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = C gs + Cgd (C ds = shorted) Coss = C ds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain−Source Voltage [V] 0.0 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 100 −55 C 0.01 100000 1000 2. 250 ms Pulse Test 150 C 0.001 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 8 100 o *Note: TC = 25 C 0.4 4 5 6 7 VGS, Gate−Source Voltage[V] Figure 2. Transfer Characteristics IS, Reverse Drain Current [A] RDS(ON), Drain−Source On−Resistance [W ] 1.2 3 Crss 8 Figure 5. Capacitance Characteristics VDS = 130V VDS = 400V 6 4 2 0 1000 *Note: I D = 5A 0 5 10 15 Qg, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.onsemi.com 4 20 FCPF360N65S3R0L TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3.0 *Notes: 1. VGS = 0V 2. I D = 10mA 1.1 RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 0.8 −50 0 50 100 o TJ, Junction Temperature [ C] 1.0 0.5 −50 0 50 100 o TJ, Junction Temperature [ C] 150 12 10 30m s 10 ID, Drain Current [A] 100m s 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain−Source Voltage [V] 4 3 2 1 130 260 390 520 VDS, Drain to Source Voltage [V] 4 25 50 75 100 125 TC, Case Temperature [ o C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 5 0 6 0 1000 Figure 9. Maximum Safe Operation Area 0 8 2 o EOSS [m J] 1.5 Figure 8. On-Resistance Variant vs. Temperature 100 ID, Drain Current [A] 2.0 0.0 150 Figure 7. Breakdown Voltage Variation vs. Temperature 0.01 2.5 *Notes: 1. VGS = 10V 2. I D = 5A 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 FCPF360N65S3R0L r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 −5 10 NOTES: Z qJC(t) = r(t) x RqJC RqJC = 4.56 oC/W Peak T J = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −3 10 −2 −1 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 1 10 2 10 FCPF360N65S3R0L Figure 13. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% tr td(on) t on Figure 14. Resistive Switching Test Circuit & Waveforms Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 td(off) t off tf FCPF360N65S3R0L + DUT VDS _ I SD L Driver RG Same Type as DUT VGS VGS ( Driver ) I SD ( DUT ) VDD Sdv/dt controlled by R G SI SD controlled by pulse period D= Gate Pulse Width Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recoverydv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK 3LD CASE 340BF ISSUE O DATE 31 AUG 2016 10.30 9.80 A 2.90 2.50 3.40 3.00 3.00 2.60 B 19.00 17.70 6.60 6.20 1 X 45° B 15.70 15.00 3.30 B 2.70 3 1 2.14 10.70 10.30 NOTES: 2.74 (2X) 2.34 4.60 4.30 DESCRIPTION: B 0.60 0.40 0.90 (3X) 0.50 0.50 M A 1.20 1.00 DOCUMENT NUMBER: 2.70 2.30 1.20(2X) 0.90 98AON13839G TO−220 FULLPAK 3LD A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative