FCPF600N60ZL1

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Other names and brands may be claimed as the property of others. FCPF600N60ZL1 N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Typ. RDS(on) = 510 mΩ • Ultra Low Gate Charge (Typ. Qg = 20 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF) • 100% Avalanche Tested • ESD Improved Capacity • RoHS Compliant Applications • LCD / LED TV and Lightning • Adapter • AC-DC Power Supply D G D S G TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - DC - AC (f > 1 Hz) - Continuous (TC = 25oC) FCPF600N60ZL1 600 Unit V ±20 V ±30 V 7.4* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 1.5 A EAR Repetitive Avalanche Energy (Note 1) 0.89 mJ dv/dt - Continuous (TC = 100oC) - Pulsed 4.7* (Note 1) MOSFET dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL 22.2* A 135 mJ 100 Peak Diode Recovery dv/dt - Derate Above 25oC A 20 V/ns 28 W 0.22 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCPF600N60ZL1 RθJC Thermal Resistance, Junction to Case, Max. 4.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 Semiconductor Components Industries, LLC, 2017 August, 2017, Rev. 2 Unit oC/W Publication Order Number: FCPF600N60ZL1/D 1 FCPF600N60ZL1 — N-Channel SuperFET® II MOSFET www.onsemi.com Part Number FCPF600N60ZL1 Top Mark FCPF600N60Z Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - ID = 10 mA, Referenced to 25oC - 0.67 - V/oC VGS = 0 V, ID = 7.4 A - 700 - V Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain to Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 600 V, VGS = 0 V V - - 1 VDS = 480 V, TC = 125oC - 1.32 - VGS = ±20 V, VDS = 0 V - - ±10 2.5 - 3.5 V - 0.51 0.6 Ω - 6.7 - S μA uA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 3.7 A VDS = 20 V, ID = 3.7 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz - 840 1120 pF - 630 840 pF - 30 45 pF Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 16.5 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 74 - pF Qg(tot) Total Gate Charge at 10V 20 26 nC Gate to Source Gate Charge VDS = 380 V, ID = 3.7 A, VGS = 10 V - Qgs - 3.4 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (Note 4) f = 1 MHz - 7.5 - nC - 2.89 - Ω - 13 36 ns - 7 24 ns - 39 88 ns - 9 28 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 3.7 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 7.4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 22.2 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 3.7 A - - 1.2 V trr Reverse Recovery Time - 200 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 3.7 A, dIF/dt = 100 A/μs - 2.3 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 3.7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FCPF600N60ZL1 — N-Channel SuperFET® II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 50 20 VGS = 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain Current[A] ID, Drain Current[A] 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 1 10 o 25 C o o 150 C 1 -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.4 0.2 1 10 VDS , Drain to Source Voltage [V] VDS , Drain-Source Voltage[V] 0.2 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 8 IS, Reverse Drain Current [A] VGS = 10V 0.6 VGS = 20V 10 o 150 C *Note: TC = 25 C 0 5 10 15 ID, Drain Current [A] *Notes: 1. VGS = 0V 1 0.4 20 Figure 5. Capacitance Characteristics o 25 C o 2. 250μs Pulse Test 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10000 VGS, Gate to Source Voltage [V] 10 Ciss 1000 Capacitances [pF] 7 50 0.9 0.3 6 VV , Gate to Source Voltage [V] GS GS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.2 RDS(ON) [Ω], Drain to Source On-Resistance 2 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.5 0.1 1 10 100 VDS, Drain to Source Voltage [V] Coss VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 Crss 0 600 www.onsemi.com 3 *Note: ID = 3.7A 0 5 10 15 20 Qg, Total Gate Charge [nC] 25 FCPF600N60ZL1 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain to Source On-Resistance BVDSS, [Normalized] Drain to Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 0.85 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 50 8 10 10μs ID, Drain Current [A] ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 3.7A 100μs 1ms 1 Operation in This Area is Limited by R DS(on) 10ms DC *Notes: 0.1 o 1. TC = 25 C 6 4 2 o 2. TJ = 150 C 3. Single Pulse 0.01 0.1 1 10 100 VDS, Drain to Source Voltage [V] 0 25 1000 Figure 11. Eoss vs. Drain to Source Voltage 4 EOSS, [μJ] 3 2 1 0 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 www.onsemi.com 4 50 75 100 125 o TC, Case Temperature [ C] 150 FCPF600N60ZL1 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve 0.5 θJC o ZθJC (t), Thermal Response Thermal Response [Z [ ]C/W] 5 1 0.2 PDM 0.1 0.05 0.02 0.01 Single pulse t1 t2 *Notes: o 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 -5 10 -4 10 -3 -2 -1 0 10 10 10 10 Duration[sec] [sec] t1Rectangular , Rectangular Pulse Pulse Duration www.onsemi.com 5 1 10 100 FCPF600N60ZL1 — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) FCPF600N60ZL1 — N-Channel SuperFET® II MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FCPF600N60ZL1 — N-Channel SuperFET® II MOSFET DUT FCPF600N60ZL1 — N-Channel SuperFET® II MOSFET Mechanical Dimensions ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 8