FCPF7N60NT

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCPF7N60NT N-Channel MOSFET 600 V, 6.8 A, 0.52 Ω Features Description • Typ RDS(on) = 460mΩ The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • Ultra Low Gate Charge (typ. Qg = 17.8 nC) • Low Effective Output Capacitance (typ. Coss(eff.) = 91 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply D G D S G TO-220F S MOSFET Maximum Ratings TC = 25 C unless otherwise noted. o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 6.8* -Continuous (TC = 100oC) 4.3* A IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 6.8 A EAR Repetitive Avalanche Energy 0.6 mJ 100 V/ns 4.9 V/ns dv/dt - Pulsed FCPF7N60NT 600 20.4 A (Note 2) 79.4 mJ MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 30.5 W 0.24 W/oC -55 to +150 oC 300 oC FCPF7N60NT Units *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 4.1 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. C2 1 oC/W www.fairchildsemi.com FCPF7N60NT — N-Channel SupreMOS® MOSFET December 2013 Device Marking FCPF7N60NT Device FCPF7N60NT Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V - 0.6 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to 25oC VDS = 480V, VGS = 0V - - 10 VDS = 480V, VGS = 0V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 3.4A - 0.46 0.52 Ω gFS Forward Transconductance VDS = 20V, ID = 3.4A - 8.5 - S VDS = 100V, VGS = 0V f = 1MHz - 719 960 pF - 30 40 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 2.1 3.2 pF Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 17 - pF Cosseff Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 91 - pF Qg(tot) Total Gate Charge at 10V 17.8 35.6 nC Qgs Gate to Source Gate Charge VDS = 380V,ID = 3.4A VGS = 10V - 3.2 6.3 nC Qgd Gate to Drain “Miller” Charge - 6.0 11.9 nC ESR Equivalent Series Resistance (G-S) - 2.5 - Ω - (Note 4) Drain Open Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time 12 24 ns VDD = 380V, ID = 3.4A RG = 4.7Ω - 6 22 ns - 35 80 ns (Note 4) - 12 24 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 6.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 20.4 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD =3.4A - - 1.2 V trr Reverse Recovery Time - 211 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 3.4A dIF/dt = 100A/μs - 1.8 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 12A, VDD = 50V, RG = 25Ω, starting TJ = 25°C. 3. ISD ≤ 36A, di/dt ≤ 200A/μs, VDD = 380V starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. C2 2 www.fairchildsemi.com FCPF7N60NT — N-Channel SupreMOS® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 30 ID, Drain Current[A] VGS = 15.0 V 10.0 V 6.0 V 4.5 V 4.0 V 10 ID, Drain Current[A] Figure 2. Transfer Characteristics 60 *Notes: 1. 250μs Pulse Test o 150 C o -55 C o 25 C 1 o 2. TC = 25 C 1 0.5 0.1 1 10 VDS, Drain-Source Voltage[V] 0.2 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage *Notes: 1. VDS = 20V 2. 250μs Pulse Test 2 4 6 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.8 0.6 VGS = 10V VGS = 20V 0.4 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o 0.2 *Note: TC = 25 C 0 4 8 12 ID, Drain Current [A] 16 0.1 0.4 20 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 6. Gate Charge Characteristics 10 10000 VGS, Gate-Source Voltage [V] *Note: 1. VGS = 0V 2. f = 1MHz 1000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.0 RDS(ON) [Ω], Drain-Source On-Resistance 10 Ciss 100 Coss 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. C2 VDS = 120V VDS = 380V VDS = 480V 8 6 4 2 Crss 0 600 3 *Note: ID = 3.4A 0 3 6 9 12 15 Qg, Total Gate Charge [nC] 18 www.fairchildsemi.com FCPF7N60NT — N-Channel SupreMOS® MOSFET Typical Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.5 0.0 -80 160 Figure 9. Maximum Safe Operating Area _ FCPF7N60NT *Notes: 1. VGS = 10V 2. ID = 3.4A -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Drain Current vs. Case Temperature 100 8 100μs 1ms ID, Drain Current [A] ID, Drain Current [A] 20μs 10 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 o 1. TC = 25 C 6 4 2 o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. C2 1000 0 25 4 50 75 100 125 o TC, Case Temperature [ C] 150 www.fairchildsemi.com FCPF7N60NT — N-Channel SupreMOS® MOSFET Typical Characteristics (Continued) FCPF7N60NT — N-Channel SupreMOS® MOSFET Typical Characteristics (Continued) Z θJC Thermal Response [ZθJC] (t), Thermal Response [oC/W] Figure 11. Transient Thermal Response Curve _ FCPF7N60NT 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 *Notes: t2 o 1. ZθJC(t) = 4.1 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 10 100 t1, Rectangular Pulse Duration [sec] ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. C2 5 www.fairchildsemi.com FCPF7N60NT — N-Channel SupreMOS® MOSFET Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. C2 6 www.fairchildsemi.com FCPF7N60NT — N-Channel SupreMOS® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. C2 7 www.fairchildsemi.com FCPF7N60NT — N-Channel SupreMOS® MOSFET Mechanical Dimensions TO-220F 3L Figure 16. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. C2 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. 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