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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FCPF850N80Z
N 沟道 SuperFET® II MOSFET
800 V, 8 A, 850 m
特性
描述
• 典型值 RDS(on) = 710 m ( 典型值 )
SuperFET® II MOSFET 是飞兆半导体利用电荷平衡技术实现出
色的低导通电阻和更低栅极电荷性能的全新高压超级结
(SJ)MOSFET 系列产品。这项技术专用于最小化导通损耗并提供
卓越的开关性能、dv/dt 额定值和更高雪崩能量。此外,内部栅源
极 ESD 二 极 管允 许 经 受超 过 2 kV HBM 冲 击压 力。因此,
SuperFET II MOSFET 非常适合功率开关应用,如音频、笔记本
适配器、照明、 ATX 电源和工业电源应用。
• 超低栅极电荷 (典型值 Qg = 22 nC)
• 低 Eoss (典型值 2.3 uJ @ 400 V)
• 低有效输出电容 (典型值 Coss(eff.)= 106 pF)
• 100% 经过雪崩测试
• 符合 RoHS 标准
• 改进的 ESD 能力
应用
• AC-DC 电源
• LED 照明
D
G
G
D
S
TO-220F
S
绝对最大额定值 TC = 25°C 除非另有说明。
符号
参数
VDSS
漏极-源极电压
VGSS
栅极-源极电压
ID
漏极电流
FCPF850N80Z
800
- DC
±20
- AC
(f > 1 Hz)
V
±30
- 连续 (TC = 25°C)
8.0*
- 连续 (TC = 100°C)
5.1*
单位
V
A
IDM
漏极电流
(注 1)
18*
A
EAS
单脉冲雪崩能量
(注 2)
114
mJ
IAR
雪崩电流
(注 1)
1.2
A
EAR
重复雪崩能量
MOSFET dv/dt
(注 1)
0.284
mJ
二极管恢复 dv/dt 峰值
(注 3)
dv/dt
PD
功耗
- 脉冲
100
V/ns
20
(TC = 25°C)
28.4
W
- 高于 25°C 的功耗系数
0.24
W/°C
-55 至 +150
300
°C
FCPF850N80Z
单位
TJ, TSTG
工作和存储温度范围
用于焊接的最大引脚温度, 距离外壳 1/8”,持续 5 秒
* 漏极电流由最高结温的限制,与散热片
TL
°C
热性能
符号
参数
RθJC
结至外壳热阻最大值
4.4
RθJA
结至环境热阻最大值
62.5
© 2014 飞兆半导体公司
FCPF850N80Z Rev. 1.2
1
°C/W
www.fairchildsemi.com
FCPF850N80Z— N 沟道 SuperFET® II MOSFET
2015 年 8 月
器件编号
FCPF850N80Z
顶标
FCPF850N80Z
封装
TO-220F
包装方法
塑料管
卷尺寸
N/A
带宽
N/A
数量
50 个
电气特性 TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值
典型值
最大值
单位
800
-
-
V
-
0.8
-
V/°C
关断特性
BVDSS
∆BVDSS
/ ∆TJ
漏极-源极击穿电压
击穿电压温度系数
IDSS
零栅极电压漏极电流
IGSS
VGS = 0 V, ID = 1 mA, TJ = 25°C
ID = 1 mA,参考 25°C 数值
VDS = 800 V, VGS = 0 V
-
-
25
VDS = 640 V, VGS = 0 V,TC = 125°C
-
-
250
栅极-体漏电流
VGS = ±20 V, VDS = 0 V
-
-
±10
VGS(th)
RDS(on)
栅极阈值电压
VGS = VDS, ID = 0.6 mA
2.5
-
4.5
V
漏极至源极静态导通电阻
VGS = 10 V, ID = 3 A
-
710
850
m
gFS
正向跨导
VDS = 20 V, ID = 3 A
-
3.5
-
S
VDS = 100 V, VGS = 0 V,
f = 1 MHz
-
990
1315
pF
-
28
37
pF
-
0.74
-
pF
VDS = 480 V, VGS = 0 V, f = 1 MHz
-
15
-
pF
106
-
pF
μA
μA
导通特性
动态特性
Ciss
Coss
Crss
Coss
输入电容
输出电容
反向传输电容
输出电容
Coss(eff.)
有效输出电容
VDS = 0 V 至 480 V, VGS = 0 V
-
Qg(tot)
10 V 的栅极电荷总量
VDS = 640 V, ID = 6 A,
VGS = 10 V
-
22
29
nC
-
5
-
nC
-
8.6
-
nC
-
2.4
-
-
16
42
ns
-
10
30
ns
-
40
90
ns
-
4.5
19
ns
Qgs
Qgd
ESR
栅极-源极栅极电荷
(注 4)
栅极-漏极 “ 米勒 ” 电荷
等效串联电阻
f = 1 MHz
开关特性
td(on)
导通延迟时间
tr
导通上升时间
td(off)
关断延迟时间
tf
关断下降时间
VDD = 400 V, ID = 6 A,
VGS = 10 V, Rg = 4.7
(注 4)
漏极 - 源极二极管特性
漏极-源极二极管最大正向连续电流
-
-
8
A
ISM
漏极-源极二极管最大正向脉冲电流
-
-
18
A
VSD
漏极-源极二极管正向电压
IS
trr
反向恢复时间
Qrr
反向恢复电荷
VGS = 0 V, ISD = 6 A
-
-
1.2
V
VGS = 0 V, ISD = 6 A,
dIF/dt = 100 A/μs
-
318
-
ns
-
4.5
-
μC
注:
1. 重复额定值:脉冲宽度受限于最大结温。
2. IAS = 1.2 A, VDD = 50 V, RG = 25 , 开始于 TJ = 25°C
3. ISD 8 A, di/dt 200 A/s, VDD BVDSS, 开始于 TJ = 25°C
4. 典型特性本质上独立于工作温度。
© 2014 飞兆半导体公司
FCPF850N80Z Rev. 1.2
2
www.fairchildsemi.com
FCPF850N80Z— N 沟道 SuperFET® II MOSFET
封装标识与定购信息
图 1. 导通区域特性
图 2. 传输特性
20
20
VGS = 20.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
10
ID, Drain Current[A]
ID, Drain Current[A]
10
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
150 C
o
25 C
o
*Notes:
1. 250s Pulse Test
-55 C
o
2. TC = 25 C
1
1
10
VDS, Drain-Source Voltage[V]
1
20
图 3. 导通电阻变化与漏极电流和栅极电压的关系
1.50
4
50
o
*Notes:
1. VGS = 0V
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
1.25
1.00
VGS = 10V
0.75
VGS = 20V
0
3
6
9
12
ID, Drain Current [A]
15
o
25 C
1
10
VGS, Gate-Source Voltage [V]
Ciss
1000
Capacitances [pF]
o
150 C
100
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
© 2014 飞兆半导体公司
FCPF850N80Z Rev. 1.2
0.4
0.8
1.2
VSD, Body Diode Forward Voltage [V]
1.6
图 6. 栅极电荷特性
10000
1
2. 250s Pulse Test
10
0.1
18
图 5. 电容特性
10
7
图 4. 体二极管正向电压变化与源极电流和温度的关系
*Note: TC = 25 C
0.50
5
6
VGS, Gate-Source Voltage[V]
1
10
100
VDS, Drain-Source Voltage [V]
3
VDS = 160V
8
VDS = 400V
VDS = 640V
6
4
2
0
1000
*Note: ID = 6A
0
6
12
18
Qg, Total Gate Charge [nC]
24
www.fairchildsemi.com
FCPF850N80Z— N 沟道 SuperFET® II MOSFET
典型性能特征
图 7. 击穿电压变化与温度的关系
图 8. 导通电阻变化与温度的关系
3.0
1.2
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
*Notes:
1. VGS = 0V
2. ID = 1mA
1.1
1.0
0.9
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.2
0.6
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
图 10. 最大漏极电流与壳温的关系
8
100
7
10s
100s
10
ID, Drain Current [A]
ID, Drain Current [A]
1.8
0.0
-100
200
图 9. 最大安全工作区
1ms
1
10ms
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1
o
6
5
4
3
2
1. TC = 25 C
o
1
2. TJ = 150 C
3. Single Pulse
0.01
2.4
*Notes:
1. VGS = 10V
2. ID = 3A
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
图 11. Eoss 和漏极 - 源极电压的关系
6
EOSS, [J]
4
2
0
0
© 2014 飞兆半导体公司
FCPF850N80Z Rev. 1.2
200
400
600
VDS, Drain to Source Voltage [V]
800
4
www.fairchildsemi.com
FCPF850N80Z— N 沟道 SuperFET® II MOSFET
典型性能特性 (接上页)
FCPF850N80Z— N 沟道 SuperFET® II MOSFET
典型性能特性 (接上页)
5
0.5
o
ZJC(t), Thermal Response [ C/W]
图 12. 瞬态热响应曲线
1
0.2
0.1
t1
0.1
0.02
0.01
t2
*Notes:
o
1. ZJC(t) = 4.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-5
10
© 2014 飞兆半导体公司
FCPF850N80Z Rev. 1.2
PDM
0.05
-4
10
-3
10
-2
-1
10
10
1
10
t1, Rectangular Pulse Duration [sec]
5
100
1000
www.fairchildsemi.com
FCPF850N80Z— N 沟道 SuperFET® II MOSFET
IG = 常量
图 13. 栅极电荷测试电路与波形
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
VGS
DUT
10%
td(on)
tr
t on
td(off)
tf
t off
图 14. 阻性开关测试电路与波形
VGS
图 15. 非箝位电感开关测试电路与波形
© 2014 飞兆半导体公司
FCPF850N80Z Rev. 1.2
6
www.fairchildsemi.com
FCPF850N80Z— N 沟道 SuperFET® II MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
图 16. 二极管恢复 dv/dt 峰值测试电路与波形
© 2014 飞兆半导体公司
FCPF850N80Z Rev. 1.2
7
www.fairchildsemi.com
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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