FCU600N65S3R0

FCU600N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. www.onsemi.com VDSS RDS(ON) MAX ID MAX 650 V 600 mW @ 10 V 6A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 493 mW Ultra Low Gate Charge (Typ. Qg = 11 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF) 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S N-Channel MOSFET G Applications • • • • G Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter D S I−PAK (DPAK3 STRAIGHT LEADS) CASE 369AP MARKING DIAGRAM $Y&Z&3&K FCU600 N65S3R0 $Y &Z &3 &K FCU600N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 4 1 Publication Order Number: FCU600N65S3R0/D FCU600N65S3R0 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 6 A Continuous (TC = 100°C) 3.8 Pulsed (Note 1) IDM Drain Current 15 A EAS Single Pulsed Avalanche Energy (Note 2) 24 mJ IAS Avalanche Current (Note 2) 1.6 A EAR Repetitive Avalanche Energy (Note 1) 0.54 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 54 W 0.43 W/°C −55 to +150 °C 300 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1.6 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 3 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit _C/W RqJC Thermal Resistance, Junction to Case, Max. 2.3 RqJA Thermal Resistance, Junction to Ambient, Max. 100 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping (Qty / Packing) FCU600N65S3R0 FCU600N65S3R0 I−PAK (DPAK3 STRAIGHT LEADS) (Pb−Free / Halogen Free) 75 Units / Tube www.onsemi.com 2 FCU600N65S3R0 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C − 0.66 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 1 mA VDS = 520 V, TC = 125_C − 0.3 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA 2.5 − 4.5 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.12 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 3 A − 493 600 mW Forward Transconductance VDS = 20 V, ID = 3 A − 3.6 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 465 − pF − 10 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 127 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 17 − pF Total Gate Charge at 10 V VDS = 400 V, ID = 3 A, VGS = 10 V (Note 4) − 11 − nC − 3 − nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 4.9 − nC f = 1 MHz − 0.9 − W VDD = 400 V, ID = 3 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 11 − ns − 9 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 29 − ns Turn-Off Fall Time − 14 − ns Maximum Continuous Source to Drain Diode Forward Current − − 6 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 15 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 3 A − − 1.2 V trr Reverse Recovery Time − 198 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 3 A, dIF/dt = 100 A/ms − 1.6 − mC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCU600N65S3R0 TYPICAL PERFORMANCE CHARACTERISTICS 30 *Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 10 ID, Drain Current [A] 10 ID, Drain Current [A] 20 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 1 0.1 150°C 25°C 1 −55°C *Notes: 1. 250 ms Pulse Test 2. TC = 25°C 0.01 0.2 1 0.1 10 3 VDS, Drain−Source Voltage [V] Figure 1. On-Region Characteristics 100 *Note: TC = 25°C 0.8 VGS = 10 V VGS = 20 V 0.4 0.0 0 3 6 9 ID, Drain Current [A] 25°C 0.1 −55°C 0.01 0.001 0.0 12 10 Ciss 100 Coss *Notes: 1 VGS = 0 V 2. f = 1 MHz 1 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain−Source Voltage [V] 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature VGS, Gate−Source Voltage [V] Capacitance [pF] 150°C 1 10000 10 9 *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1000 5 6 7 8 VGS, Gate−Source Voltage [V] Figure 2. Transfer Characteristics IS, Reverse Drain Current [A] RDS(on), Drain−Source−Resistance [W] 1.2 4 Crss 8 VDS = 130 V VDS = 400 V 6 4 2 0 1000 *Note: ID = 3 A 0 3 6 9 12 Qg, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCU600N65S3R0 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3.0 *Notes: 1. VGS = 0 V 2. ID = 10 mA 1.1 RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 0.8 −50 0 50 100 2.5 2.0 1.5 1.0 0.5 0.0 150 TJ, Junction Temperature [5C] 100 150 10 ms 100 ms ID, Drain Current [A] ID, Drain Current [A] 50 8 10 1 ms 1 10 ms DC Operation in This Area is Limited by RDS(on) 0.1 *Notes: 1. TC = 25°C 2. ID = 10 mA 3. Single Pulse 1 10 100 VDS, Drain−Source Voltage [V] 6 4 2 0 25 1000 2.5 2.0 1.5 1.0 0.5 130 260 390 520 VDS, Drain−Source Voltage [V] 75 100 125 Figure 10. Maximum Drain Current vs. Case Temperature 3.0 0 50 TC, Case Temperature [5C] Figure 9. Maximum Safe Operation Area EOSS [mJ] 0 Figure 8. On-Resistance Variant vs. Temperature 30 0 −50 TJ, Junction Temperature [5C] Figure 7. Breakdown Voltage Variation vs. Temperature 0.01 *Notes: 1. VGS = 10 V 2. ID = 3 A 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 150 FCU600N65S3R0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.001 −5 10 SINGLE PULSE −4 10 −3 10 −2 10 −1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 1 10 FCU600N65S3R0 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCU600N65S3R0 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (STRAIGHT LEADS) CASE 369AP ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13816G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DPAK3 (STRAIGHT LEADS) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales