FCU900N60Z

FCU900N60Z MOSFET, N-Channel, SuperFET) II 600 V, 4.5 A, 900 mW www.onsemi.com Description SuperFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G Features • • • • • • • S 675 V @ TJ = 150°C Typ. RDS(on) = 820 mW Ultra Low Gate Charge (Typ. Qg = 13 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 48.6 pF) 100% Avalanche Tested ESD Improved Capacity RoHS Compliant N−Channel G D S DPAK3 CASE 369AP Applications • LCD/LED/PDP TV and Monitor Lighting • Solar Inverter • Charger MARKING DIAGRAM $Y&Z&3&K FCU 900N60Z $Y &Z &3 &K FCU900N60Z = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION Device Top Mark FCU900N60Z FCU900N60Z © Semiconductor Components Industries, LLC, 2012 April, 2019 − Rev. 4 1 Package Shipping DPAK3 70 Units/ Tube Publication Order Number: FCU900N60Z/D FCU900N60Z ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 600 V DC ±20 V AC (f > 1 Hz) ±30 Continuous (TC = 25°C) 4.5 Continuous (TC = 100°C) 2.8 Pulsed (Note 1) 13.5 A 47.5 mJ 1 A A IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 0.52 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 52 W 0.42 W/°C −55 to +150 °C 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 1.0 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 2.3 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RqJC Thermal Resistance, Junction to Case, Max. 2.4 RqJA Thermal Resistance, Junction to Ambient, Max. 100 www.onsemi.com 2 FCU900N60Z ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit ID = 1 mA, VGS = 0 V, TJ = 25°C 625 − − V ID = 1 mA, VGS = 0 V, TJ = 150°C 675 − − OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, referenced to 25°C − 0.67 − V/°C BVDS Drain to Source Avalanche Breakdown Voltage VGS = 0 V, ID = 4.5 V − 700 − V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V − − 1 mA VDS = 600 V, TC = 125°C − − 10 IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V − − ±10 mA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 mA 2.5 − 3.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.3 A − 0.82 0.90 W Forward Transconductance VDS = 20 V, ID = 2.3 A − 4.6 − S VDS = 40 V, VGS = 0 V, f = 1 MHz − 534 710 pF − 399 530 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance − 19.7 30 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz − 11.1 − pF Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V − 48.6 − pF Total Gate Charge at 10 V VDS = 380 V, ID = 2.3 A, VGS = 10 V − 13.1 17 nC − 2.2 − nC Coss(eff.) Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge (Note 4) − 4.5 − nC ESR Equivalent Series Resistance f = 1 MHz − 2.4 − W VDD = 380 V, ID = 2.3 A, VGS = 10 V, RG = 4.7 W − 10.9 32 ns − 5.3 21 ns (Note 4) − 33.6 77 ns − 11.9 34 ns Maximum Continuous Drain to Source Diode Forward Current − − 4.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 13.5 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 2.3 A − − 1.2 V trr Reverse Recovery Time − 156 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 2.3 A, dIF/dt = 100 A/ms − 1.3 − mC SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn−On Delay Time Turn−On Rise Time Turn−Off Delay Time Turn−Off Fall Time DRAIN−SOURCE DIODE CHARACTERISTIC IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature. www.onsemi.com 3 FCU900N60Z TYPICAL PERFORMANCE CHARACTERISTICS 20 1 * Notes: 1. 250 ms Pulse Test 2. TC = 25°C 0.1 0.2 * Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 10 ID, Drain Current [A] 10 ID, Drain Current [A] 20 VGS = 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 Vo 1 10 150°C 25°C 1 −55°C 0.1 20 4 2 VDS, Drain to Source Voltage [V] Figure 1. On−Region Characteristics 50 IS, Reverse Drain Current [A] RDS(ON), Drain to Source On Resistance [W] 1.6 1.2 VGS = 10 V VGS = 20 V 0.8 * Note: TC = 25°C 0 3 6 9 25°C 1 0.1 12 150°C 10 * Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 0.4 ID, Drain Current [A] 10000 VGS, Gate to Source Voltage [V] Capacitances [pF] Ciss 100 Coss 10 1 Crss 10 1.6 10 1000 0.1 1.2 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note: 1. VGS = 0 V 2. f = 1 MHz 0.8 VSD, Body Diode Forward Voltage [A] Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 1 0.5 8 Figure 2. Transfer Characteristics 2.0 0.4 6 VGS, Gate to Source Voltage [V] 100 6 4 2 0 600 VDS = 120 V VDS = 300 V VDS = 480 V 8 * Note: ID = 2.3 A 0 3 6 9 12 15 Qg, Total Gate Charge [nC] VDS, Drain to Source Voltage [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCU900N60Z 1.15 3.0 1.10 2.5 RDS(on), Drain to Source On−Resistance [Normalized] BVDSS, Drain to Source Breakdown Voltage [Normalized] TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1.05 1.00 0.95 * Notes: 1. VGS = 0 V 2. ID = 1 mA 0.90 0.85 −100 −50 0 50 100 150 2.0 1.5 1.0 0.0 −100 200 TJ, Junction Temperature [5C] 0 50 100 150 200 Figure 8. On−Resistance Variation vs. Temperature 5 20 10 ms 10 4 ID, Drain Current [A] ID, Drain Current [A] −50 TJ, Junction Temperature [5C] Figure 7. Breakdown Voltage Variation vs. Temperature 100 ms 1 1 ms Operation in This Area is Limited by RDS(on) 0.1 10 ms DC * Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0.01 0.1 1 10 100 2.0 1.6 1.2 0.8 0.4 0.0 300 400 500 50 75 100 125 Figure 10. Maximum Drain Current vs. Case Temperature 2.4 200 25 TC, Case Temperature [5C] 2.8 100 2 0 1000 Figure 9. Maximum Safe Operating Area 0 VGS = 10 V 3 1 VDS, Drain to Source Voltage [V] Eoss [mJ] * Notes: 1. VGS = 10 V 2. ID = 2.3 A 0.5 600 VDS, Drain to Source Voltage [V] Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 5 150 FCU900N60Z TYPICAL PERFORMANCE CHARACTERISTICS (continued) ZqJC(t), Thermal Response [5C/W] 3 0.5 1 0.2 0.1 0.05 0.02 0.01 0.1 10−5 PDM t1 t2 Single pulse 10−4 * Notes: 1. ZqJC(t) = 2.4°C/W Max. 2. Duty Factor, D = t1/t2 3. TJM −TC = PDM × ZqJC(t) 10−3 10−2 10−1 VDS, Drain to Source Voltage [V] Figure 12. Transient Thermal Response Curve www.onsemi.com 6 100 FCU900N60Z VGS Qg RL VDS VGS Qgs Qgd DUT IG = const. Charge Figure 13. Gate Charge Test Circuit and Waveform RL VDS VDS 90% VDD VGS RG VGS DUT VGS 10% td(on) tr td(off) ton toff tf Figure 14. Resistive Switching Test Circuit and Waveforms L VDS E AS + BVDSS ID IAS RG VDD ID(t) VDS(t) VDD DUT 10 V 1 2 L I AS 2 tp tp Figure 15. Unclamped Inductive Switching Test Circuit and Waveforms www.onsemi.com 7 Time FCU900N60Z DUT + VDS − ISD L Driver RG Same type as DUT VGS VGS (Driver) VDD Sdv/dt controlled by RG SISD controlled by pulse period D+ Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit and Waveforms SuperFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (STRAIGHT LEADS) CASE 369AP ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13816G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DPAK3 (STRAIGHT LEADS) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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