FDA16N50-F109

N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 mΩ Features Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • RDS(on) = 380 mΩ (Max.) @ VGS = 10, ID = 8.3 A • Low Gate Charge (Typ. 32 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply D G G D TO-3PN S S Absolute Maximum Ratings Symbol TC = 25oC unless otherwise noted. Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FDA16N50-F109 Unit 500 V 16.5 9.9 A A 66 A ±30 V Single Pulsed Avalanche Energy (Note 2) 780 mJ Avalanche Current (Note 1) 16.5 A EAR Repetitive Avalanche Energy (Note 1) 20.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 205 2.1 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C FDA16N50-F109 Unit (Note 1) (TC = 25°C) - Derate above 25°C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case, Max. 0.6 RθJA Thermal Resistance, Junction-to-Ambient, Max. 40 ©2007 Semiconductor Components Industries, LLC. September-2017, Rev. 3 1 °C/W Publication Order Number: FDA16N50-F109/D FDA16N50-F109 — N-Channel UniFETTM MOSFET FDA16N50-F109 Device Marking Device Package Reel Size Tape Width Quantity FDA16N50 FDA16N50-F109 TO-3PN Tube N/A 30 units Electrical Characteristics TC = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max Unit 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 8.3A -- 0.31 0.38 Ω gFS Forward Transconductance VDS = 40V, ID = 8.3A -- 23 -- S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 1495 1945 pF -- 235 310 pF -- 20 30 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 16A RG = 25Ω (Note 4) VDS = 400V, ID = 16A VGS = 10V (Note 4) -- 40 90 ns -- 150 310 ns -- 65 140 ns -- 80 170 ns -- 32 45 nC -- 8.5 -- nC -- 14 -- nC 9.2 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 37 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 16.5A -- -- 1.4 V trr Reverse Recovery Time 490 -- ns Reverse Recovery Charge VGS = 0V, IS = 16A dIF/dt =100A/μs -- Qrr -- 5.0 -- μC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.1mH, IAS = 16.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics www.onsemi.com 2 FDA16N50-F109 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 2 10 Top : 1 10 ID, Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 0 10 o 1 150 C 10 o 25 C o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250μs Pulse Test -1 10 2. 250μs Pulse Test o 2. TC = 25 C -1 0 10 0 10 2 1 10 10 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.6 0.5 VGS = 10V 0.4 VGS = 20V 0.3 o * Note : TJ = 25 C 0.2 1 10 o 150 C o 25 C 2. 250μs Pulse Test 0 0 5 10 15 20 25 30 35 40 10 0.2 0.4 ID, Drain Current [A] 0.6 0.8 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Figure 6. Gate Charge Characteristics 4000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 3000 Coss Ciss * Note ; 1. VGS = 0 V 1000 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] Crss = Cgd 2000 1.0 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Capacitances [pF] * Notes : 1. VGS = 0V 10 VDS = 100V 8 VDS = 400V VDS = 250V 6 4 2 * Note : ID = 16A 0 -1 10 0 10 1 10 0 0 VDS, Drain-Source Voltage [V] 10 20 QG, Total Gate Charge [nC] www.onsemi.com 3 30 40 FDA16N50-F109 — N-Channel UniFETTM MOSFET Typical Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA 0.8 -100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 8.3 A -50 0 50 100 150 0.0 -100 200 o TJ, Junction Temperature [ C] -50 0 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 2 10 Operation in This Area is Limited by R DS(on) 0 10 15 ID, Drain Current [A] 1 10 * Notes : -1 10 o 10 5 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 0 10 1 0 25 2 10 10 50 75 100 TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 D = 0 .5 10 0 .2 -1 0 .1 0 .0 5 * N o te s : 0 .0 2 0 .0 1 10 o 10 1 . Z θ J C (t) = 0 .6 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) s in g le p u ls e -2 -5 10 -4 125 o VDS, Drain-Source Voltage [V] θJC 10 o ZθJC Z (t), (t),Thermal ThermalResponse Response[ C/W] ID, Drain Current [A] 10 μs 100 μs 1 ms 10 ms 100 ms DC 10 -3 10 -2 10 -1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] www.onsemi.com 4 10 0 10 1 150 FDA16N50-F109 — N-Channel UniFETTM MOSFET Typical Characteristics (Continued) FDA16N50-F109 — N-Channel UniFETTM MOSFET Figure 12. Gate Charge Test Circuit & Waveform IG = const. Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG V 10V GS RL VDS 90% VDD VGS DUT VGS 10% td(on) tr t on td(off) t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS www.onsemi.com 5 tf DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FDA16N50-F109 — N-Channel UniFETTM MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms FDA16N50-F109 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. 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