FDA16N50LDTU

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDA16N50LDTU N-Channel UniFETTM MOSFET 500 V, 16.5 A, 380 mΩ Features Description • RDS(on) = 310 mΩ (Typ.) @ VGS = 10 V, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 32 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply D G D G S TO-3PN (L-forming) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Continuous (TC = 25oC) FDA16N50LDTU 500 Unit V ±30 V 16.5 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 16.5 A EAR Repetitive Avalanche Energy (Note 1) 20.5 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns - Continuous (TC = 100oC) - Pulsed (Note 1) 66 A (Note 2) 780 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL A 9.9 - Derate Above 25oC 205 W 2.1 W/oC -55 to +150 oC 300 oC FDA16N50LDTU Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.6 RθJA Thermal Resistance, Junction to Ambient, Max. 40 ©2011 Fairchild Semiconductor Corporation FDA16N50LDTU Rev. C0 1 o C/W www.fairchildsemi.com FDA16N50LDTU — N-Channel UniFETTM MOSFET August 2014 Part Number FDA16N50LDTU Top Mark FDA16N50 Package TO-3PN (L-forming) Packing Method Reel Size Tape Width Quantity Tube N/A N/A 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.50 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC o ID = 250 μA, Referenced to 25 C VDS = 500 V, VGS = 0 V - - 20 VDS = 500 V, TC = 125oC - - 200 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 8.3 A - 0.31 0.38 Ω gFS Forward Transconductance VDS = 40 V, ID = 8.3 A - 23 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 1495 1945 pF - 235 310 pF - 20 30 pF - 32 45 nC - 8.5 - nC - 14 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400 V, ID = 16 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250 V, ID = 16 A, VGS = 10 V, RG = 25 Ω (Note 4) - 40 90 ns - 150 310 ns - 65 140 ns - 80 170 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 16.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 66 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 16.5 A - - 1.4 V trr Reverse Recovery Time - 490 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 16 A, dIF/dt = 100 A/μs - 5.0 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 5.1 mH, IAS = 16.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 16.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical Characteristics ©2011 Fairchild Semiconductor Corporation FDA16N50LDTU Rev. C0 2 www.fairchildsemi.com FDA16N50LDTU — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 2 10 Top : 1 10 ID, Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 0 10 o 1 150 C 10 o 25 C o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250μs Pulse Test -1 10 2. 250μs Pulse Test o 2. TC = 25 C -1 0 10 0 10 2 1 10 10 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.6 0.5 VGS = 10V 0.4 VGS = 20V 0.3 o * Note : TJ = 25 C 0.2 1 10 o 150 C o 25 C 2. 250μs Pulse Test 0 0 5 10 15 20 25 30 35 10 40 0.2 ID, Drain Current [A] 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Figure 6. Gate Charge Characteristics 4000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd VGS, Gate-Source Voltage [V] Crss = Cgd 3000 Coss 2000 1.0 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Capacitances [pF] * Notes : 1. VGS = 0V Ciss * Note ; 1. VGS = 0 V 1000 2. f = 1 MHz Crss 10 VDS = 100V 8 VDS = 400V VDS = 250V 6 4 2 * Note : ID = 16A 0 -1 10 0 10 0 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDA16N50LDTU Rev. C0 0 10 20 30 40 QG, Total Gate Charge [nC] 3 www.fairchildsemi.com FDA16N50LDTU — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA 0.8 -100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 8.3 A -50 0 50 100 150 0.0 -100 200 o -50 0 TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 2 10 1 10 Operation in This Area is Limited by R DS(on) 0 10 15 ID, Drain Current [A] ID, Drain Current [A] 10 μs 100 μs 1 ms 10 ms 100 ms DC * Notes : -1 10 10 5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 0 25 2 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response [oC/W] ZθJC(t), Thermal Response 10 0 D = 0 .5 0 .2 10 PDM -1 0 .1 t1 0 .0 5 * N o te s : 0 .0 2 0 .0 1 10 o -2 10 1 . Z θ J C (t) = 0 .6 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) s in g le p u ls e -5 t2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1t1, , S Rectangular q u a re W a v ePulse P u ls eDuration D u ra tio n[sec] [s e c ] ©2011 Fairchild Semiconductor Corporation FDA16N50LDTU Rev. C0 4 www.fairchildsemi.com FDA16N50LDTU — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) FDA16N50LDTU — N-Channel UniFETTM MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDA16N50LDTU Rev. C0 5 www.fairchildsemi.com FDA16N50LDTU — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDA16N50LDTU Rev. C0 6 www.fairchildsemi.com 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 3° 20.10 19.70 18.90 18.50 E 16.96 16.56 4.45 3.95 3° 1 1.85 2.20 1.80 1.20 0.80 0.55 M 5.45 3 E 3.70 3.30 3.20 2.80 5.25 4.75 4° R0.60 E 9.25 8.75 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED R0.50 A) PACKAGE REFERENCE EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E DOES NOT COMPLY EIAJ SC-65. F) DRAWING FILE NAME: TO3PN03CREV1. G) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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