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N-Channel UniFETTM MOSFET
500 V, 20 A, 230 mΩ
Features
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 10 A
• Low Gate Charge (Typ. 45.6 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
G
D
TO-3PN
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
S
FDA20N50-F109
Unit
500
V
22
13.2
A
A
88
A
± 30
V
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
1110
mJ
IAR
Avalanche Current
(Note 1)
22
A
EAR
Repetitive Avalanche Energy
(Note 1)
28.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
20
V/ns
PD
Power Dissipation
280
2.3
W
W/°C
-55 to +150
°C
300
°C
(Note 1)
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Semiconductor Components Industries, LLC.
September-2017 Rev. 3
1
FDA20N50-F109
Unit
0.44
°C/W
40
°C/W
Publication Order Number:
FDA20N50-F109/D
FDA20N50-F109 — N-Channel UniFETTM MOSFET
FDA20N50-F109
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDA20N50
FDA20N50-F109
TO-3PN
Tube
N/A
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
500
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.50
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 11A
--
0.20
0.23
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 11A
--
24.6
--
S
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
2400
3120
pF
--
355
465
pF
--
27
--
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250V, ID = 20A
RG = 25Ω
(Note 4)
VDS = 400V, ID = 20A
VGS = 10V
(Note 4)
--
95
200
ns
--
375
760
ns
--
100
210
ns
--
105
220
ns
--
45.6
59.5
nC
--
14.8
--
nC
--
21.6
--
nC
20
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
80
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 22A
--
--
1.4
V
trr
Reverse Recovery Time
507
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/μs
--
Qrr
--
7.20
--
μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.1mH, IAS = 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 22A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
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2
FDA20N50-F109 — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
10
VGS
0
10
o
150 C
1
o
10
25 C
o
-55 C
* Notes :
1. 250μs Pulse Test
* Notes :
1. VDS = 40V
o
2. TC = 25 C
2. 250μs Pulse Test
0
-1
0
10
10
1
10
10
2
4
VDS, Drain-Source Voltage [V]
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
0.8
0.6
VGS = 10V
0.4
VGS = 20V
0.2
o
* Note : TJ = 25 C
0.0
1
10
o
150 C
*Notes :
1. VGS = 0V
2. 250μs Pulse Test
0
0
15
30
45
60
75
10
90
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
6000
1.4
1.6
VDS = 100V
Ciss
2000
* Note :
1. VGS = 0 V
2. f = 1 MHz
Crss
VGS, Gate-Source Voltage [V]
Crss = Cgd
Coss
1000
1.2
12
Coss = Cds + Cgd
4000
3000
1.0
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
5000
0.8
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Capacitances [pF]
o
25 C
VDS = 250V
10
VDS = 400V
8
6
4
2
* Note : ID = 20A
0
-1
10
0
10
1
10
0
0
10
20
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
40
50
FDA20N50-F109 — N-Channel UniFETTM MOSFET
Typical Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
Drain-Source On-Resistance
3.0
RDS(ON), (Normalized)
RDS(ON)On-Resistance
, (Normalized)
Drain-Source
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
0.8
-100
-50
0
50
100
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
* Notes :
1. VGS = 10 V
2. ID = 5.5 A
0.5
* Notes :
1. VGS = 10 V
0.5
0.0
-100
150
-50
0.0
-100
200
0
50
100
o
TJ, 0Junction Temperature
[ C]
50
100
-50
o
TJ, Junction Temperature [ C]
2. ID = 11 A
150
150
200
200
o
TJ, Junction Temperature [ C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
2
10 μs
20
ID, Drain Current [A]
100 μs
1 ms
10 ms
DC 100 ms
1
10
Operation in This Area
is Limited by R DS(on)
0
10
* Notes :
o
1. TC = 25 C
15
10
5
o
2. TJ = 150 C
3. Single Pulse
-1
0
10
1
2
10
0
25
3
10
10
50
75
VDS, Drain-Source Voltage [V]
100
10
0
D = 0 .5
10
-1
0 .2
0 .1
PDM
0 .0 5
10
t1
0 .0 2
0 .0 1
-2
* N o te s :
-5
10
-4
t2
o
1 . Z θJC (t) = 0 .4 4 C /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
s in g le p u ls e
10
125
o
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
θJC
10
ZθJC
Thermal
Response
[oC/W]
Z(t),(t),
Thermal
Response
ID, Drain Current [A]
10
3 . T JM - T C = P D M * Z θJC ( t)
10
-3
10
-2
10
-1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
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4
10
0
10
1
150
FDA20N50-F109 — N-Channel UniFETTM MOSFET
Typical Characteristics (Continued)
FDA20N50-F109 — N-Channel UniFETTM MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
IG = const.
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
DUT
VGS
10%
td(on)
tr
t on
td(off)
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
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5
tf
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
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6
VDD
FDA20N50-F109 — N-Channel UniFETTM MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDA20N50-F109 — N-Channel UniFETTM MOSFET
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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