FDA62N28

TM FDA62N28 280V N-Channel MOSFET Features Description • 62A, 280V, RDS(on) = 0.051Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC) • Low Crss ( typical 83 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D ! " G! ! " " " ! TO-3PN S FDA Series G DS Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed FDA62N28 Unit 280 V 62 37 A A IDM Drain Current VGSS Gate-Source voltage 248 A ±30 V EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 2) 1919 mJ (Note 1) 62 A EAR Repetitive Avalanche Energy (Note 1) 50 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 500 4 W W/°C -55 to +150 °C 300 °C (Note 1) (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2005 Fairchild Semiconductor Corporation FDA62N28 Rev. A 1 Min. Max. Unit -- 0.25 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET UniFET Device Marking Device FDA62N28 FDA62N28 Electrical Characteristics Symbol Package Reel Size TO-3PN Tape Width - Quantity - 30 TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 280 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.28 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 280V, VGS = 0V VDS = 224V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.043 0.051 Ω -- 51 -- S -- 3560 4630 pF -- 730 950 pF -- 83 120 pF -- 90 190 ns On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 31A gFS Forward Transconductance VDS = 40V, ID = 31A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 140V, ID = 62A RG = 25Ω (Note 4, 5) VDS = 224V, ID = 62A VGS = 10V (Note 4, 5) -- 560 1130 ns -- 110 230 ns -- 220 450 ns -- 77 100 nC -- 25 -- nC -- 41 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 248 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 62A -- -- 1.4 V trr Reverse Recovery Time -- 236 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 62A dIF/dt =100A/µs -- 6.1 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.82mH, IAS = 62A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 62A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA62N28 Rev. A 2 www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID, Drain Current [A] Top : 2 10 1 10 10 2 10 1 o 150 C o 25 C o -55 C ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ 0 10 -1 0 10 10 1 10 10 0 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.09 2 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 0.10 VGS = 10V 0.08 0.07 0.06 VGS = 20V 0.05 0.04 ※ Note : TJ = 25℃ 0.03 10 1 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0 0 25 50 75 100 125 150 175 10 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 9000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] Coss 6000 Ciss 3000 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss VDS = 56V 10 VDS = 140V VDS = 224V 8 6 4 2 ※ Note : ID = 62A 0 -1 10 0 0 10 1 10 FDA62N28 Rev. A 0 10 20 30 40 50 60 70 80 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Typical Performance Characteristics FDA62N28 280V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 31 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 100 150 200 o Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 10 70 10 µs 100 µs 2 10 60 1 ms 10 ms DC 100 ms 1 10 ID, Drain Current [A] ID, Drain Current [A] 50 TJ, Junction Temperature [ C] Operation in This Area is Limited by R DS(on) 0 10 ※ Notes : o 50 40 30 20 1. TC = 25 C -1 10 o 2. TJ = 150 C 3. Single Pulse 10 -2 10 0 10 1 0 25 2 10 10 50 75 VDS, Drain-Source Voltage [V] 100 125 150 TC, Case Temperature [℃] Zθ JC(t), Thermal Response Figure 11. Transient Thermal Response Curve 10 D =0.5 -1 0.2 0.1 ※ N ote s : 1. Z θ JC(t) = 0 .25 ℃ /W M ax. 2. D u ty Facto r, D =t 1 /t 2 3. T JM - T C = P D M * Z θ JC(t) 0.05 10 0.02 -2 PDM 0.01 t1 single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S quare W ave P ulse D uration [sec] FDA62N28 Rev. A 4 www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp FDA62N28 Rev. A VDS (t) VDD DUT 10V ID (t) tp 5 Time www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FDA62N28 Rev. A 6 www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA62N28 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18