TM
UniFET
FDAF62N28
280V N-Channel MOSFET
Features
Description
• 36A, 280V, RDS(on) = 0.051Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 83 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G
TO-3PF
G D S
FDAF Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
FDAF62N28
Unit
280
V
36
22
A
A
144
A
±30
V
(Note 2)
1919
mJ
(Note 1)
36
A
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
16.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
165
1.3
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
RθJC
Thermal Resistance, Junction-to-Case
--
0.75
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
©2006 Fairchild Semiconductor Corporation
FDAF62N28 Rev. A
1
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FDAF62N28 280V N-Channel MOSFET
October 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDAF62N28
FDAF62N28
TO-3PF
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
280
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.28
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 280V, VGS = 0V
VDS = 224V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.043
0.051
Ω
--
51
--
S
--
3560
4630
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 18A
gFS
Forward Transconductance
VDS = 40V, ID = 18A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
730
950
pF
--
83
120
pF
--
90
190
ns
--
560
1130
ns
--
110
230
ns
--
220
450
ns
--
77
100
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 140V, ID = 62A
RG = 25Ω
(Note 4, 5)
VDS = 224V, ID = 62A
VGS = 10V
(Note 4, 5)
--
25
--
nC
--
41
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
36
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
144
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 36A
--
--
1.4
V
trr
Reverse Recovery Time
--
236
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 62A
dIF/dt =100A/µs
--
6.1
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.4mH, IAS = 36A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 36A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDAF62N28 Rev. A
2
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FDAF62N28 280V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
ID, Drain Current [A]
Top :
2
10
1
10
10
2
10
1
o
150 C
o
25 C
o
-55 C
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
0
10
-1
0
10
10
1
10
10
0
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.09
2
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
0.10
VGS = 10V
0.08
0.07
0.06
VGS = 20V
0.05
0.04
※ Note : TJ = 25℃
0.03
10
1
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0
0
25
50
75
100
125
150
175
10
200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
9000
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
Coss
6000
Ciss
3000
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
VDS = 56V
10
VDS = 140V
VDS = 224V
8
6
4
2
※ Note : ID = 62A
0
-1
10
0
0
10
1
10
FDAF62N28 Rev. A
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDAF62N28 280V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
-100
-50
0
50
100
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 18 A
0.5
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
40
2
10 µs
10
30
1 ms
1
10
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
0
10
DC
※ Notes :
-1
o
1. TC = 25 C
10
20
10
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
0
25
2
10
10
50
75
VDS, Drain-Source Voltage [V]
100
125
150
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
10
0
Zθ JC(t), Thermal Response
D =0.5
0.2
10
-1
0.1
※ N otes :
1. Z θ JC(t) = 0.75 ℃ /W M ax.
2. D uty F actor, D =t 1 /t 2
3. T JM - T C = P DM * Z θ JC(t)
0.05
0.02
PDM
0.01
10
t1
-2
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S quare W ave P ulse D uration [sec]
FDAF62N28 Rev. A
4
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FDAF62N28 280V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDAF62N28 280V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDAF62N28 Rev. A
5
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FDAF62N28 280V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDAF62N28 Rev. A
6
www.fairchildsemi.com
FDAF62N28 280V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3PF
4.50 ±0.20
5.50 ±0.20
15.50 ±0.20
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
1.50 ±0.20
16.50 ±0.20
2.50 ±0.20
0.85 ±0.03
22.00 ±0.20
23.00 ±0.20
10
°
10.00 ±0.20
(1.50)
2.00 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
4.00 ±0.20
3.30 ±0.20
+0.20
0.75 –0.10
2.00 ±0.20
3.30 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
+0.20
0.90 –0.10
5.50 ±0.20
26.50 ±0.20
14.80 ±0.20
3.00 ±0.20
ø3.60 ±0.20
Dimensions in Millimeters
FDAF62N28 Rev. A
7
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I21
