Is Now Part of
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDB016N04AL7
N-Channel PowerTrench® MOSFET
40 V, 306 A, 1.6 mW
Features
Description
• RDS(on) = 1.16 mW (Typ.) @ VGS = 10 V, ID = 80 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintaining superior switching performance.
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
Applications
•
• High Power and Current Handling Capability
• Synchronous Rectification for ATX / Server / Telecom PSU
• RoHS Compliant
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
4
12
3
56
7
D(Pin4, tab)
1. Gate
2. Source
3. Source
4. Drain
5. Source
6. Source
7. Source
G
(Pin1)
D2-PAK
(TO-263)
S(Pin2,3,5,6,7)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Parameter
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
TJ, TSTG
TL
Unit
V
±20
V
- Continuous (TC = 25oC, Silicon Limited)
Drain Current
PD
FDB016N04AL7
40
306*
- Continuous (TC = 100oC, Silicon Limited)
216*
A
- Continuous (TC = 25oC, Package Limited)
160
- Pulsed
(Note 1)
1224
A
(Note 2)
1350
mJ
6.0
V/ns
(Note 3)
(TC = 25oC)
- Derate Above
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
283
W
1.89
W/oC
-55 to +175
oC
25oC
300
o
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 160 A.
Thermal Characteristics
Symbol
Parameter
FDB016N04AL7
RqJC
Thermal Resistance, Junction to Case, Max.
0.53
RqJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
1
Unit
oC/W
www.fairchildsemi.com
FDB016N04AL7 N-Channel PowerTrench® MOSFET
June 2014
Part Number
FDB016N04AL7
Top Mark
FDB016N04A
Package
D2PAK-7L
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
40
-
-
V
ID = 250 mA, Referenced to 25oC
-
0.03
-
V/oC
VDS = 32 V, VGS = 0 V
Off Characteristics
BVDSS
DBVDSS
DTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 mA, VGS = 0 V, TC = 25oC
-
-
10
VDS = 32 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
-
-
500
-
-
±100
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 80 A
1.0
-
3.0
V
-
1.16
1.6
mW
-
381
-
S
-
8715
11600
pF
-
2035
2710
pF
-
230
-
pF
-
129
167
nC
-
28
-
nC
-
12
-
nC
-
17
-
nC
-
21
52
ns
-
14
38
ns
-
118
246
ns
-
33
76
ns
-
1.25
-
W
A
mA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
gFS
Forward Transconductance
Static Drain to Source On Resistance
VDS = 10 V, ID = 80 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 32 V, ID = 80 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
ESR
Equivalent Series Resistance (G-S)
VDD = 20 V, ID = 80 A,
RG = 4.7 W, VGS = 10 V
(Note 4)
f = 1 MHz
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
306
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
1224
VSD
A
Drain to Source Diode Forward Voltage
-
-
1.3
V
trr
Reverse Recovery Time
VGS = 0 V, ISD = 80 A
VGS = 0 V, ISD = 80 A,
dIF/dt = 100 A/ms
-
68
-
ns
-
84
-
nC
Qrr
Reverse Recovery Charge
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 30 A, VDD = 25 V, RG = 25 W, starting TJ = 25°C.
3. ISD £ 80 A, di/dt £ 200 A/ms, VDD £ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
2
www.fairchildsemi.com
FDB016N04AL7 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1000
VGS = 10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
100
ID,Drain Current[A]
ID,Drain Current[A]
500
*Notes:
1. VDS = 20V
2. 250ms Pulse Test
100
o
175 C
o
25 C
10
o
-55 C
*Notes:
1. 250ms Pulse Test
o
2. TC = 25 C
10
0.01
0.1
1
VDS,Drain-Source Voltage[V]
1
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1
2
3
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
300
IS, Reverse Drain Current [A]
RDS(ON) [W],
Drain-Source On-Resistance
1.4
1.3
VGS = 10V
1.2
VGS = 20V
1.1
100
o
175 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Notes: TC = 25 C
1.0
0
50
100 150 200 250
ID, Drain Current [A]
300
1
0.2
350
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Ciss
Coss
1000
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.4
10
10000
100
2. 250ms Pulse Test
Figure 6. Gate Charge Characteristics
20000
Capacitances [pF]
4
1
10
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
6
4
2
0
40
3
VDS = 8V
VDS = 20V
VDS = 32V
8
*Notes: ID = 80A
0
30
60
90
120
Qg, Total Gate Charge [nC]
150
www.fairchildsemi.com
FDB016N04AL7 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation vs.
Temperature
2.00
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.25
1.00
*Notes:
1. VGS = 10V
2. ID = 80A
0.75
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current vs.
Case Temperature
3000
350
1000
300
100
ID, Drain Current [A]
ID, Drain Current [A]
1.50
0.50
-100
200
Figure 9. Maximum Safe Operating Area
10
1.75
100ms
Operation in This Area
is Limited by R DS(on)
*Notes:
1
1ms
10ms
o
1. TC = 25 C
100ms
o
2. TJ = 175 C
3. Single Pulse
0.1
0.1
200
150
100
Limited by package
50
DC
1
10
VDS, Drain-Source Voltage [V]
250
0
25
100 200
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Unclamped Inductive
Switching Capability
IAS, AVALANCHE CURRENT(A)
1000
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ¹
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
10
1
0.0001
STARTING TJ = 25oC
STARTING TJ = 150oC
0.01
1
100
tAV, TIME IN AVALANCHE(ms)
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
10000
4
www.fairchildsemi.com
FDB016N04AL7 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDB016N04AL7 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
Thermal Response [ZqJC]
1
0.5
0.1
0.2
0.1
PDM
0.05
0.02
0.01
0.01
t1
Single pulse
*Notes:
t2
o
1. ZqJC(t) = 0.53 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * Zq JC(t)
0.001
-5
10
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
-4
10
-3
-2
-1
10
10
10
t1, Rectangular Pulse Duration [sec]
5
1
10
www.fairchildsemi.com
FDB016N04AL7 N-Channel PowerTrench® MOSFET
Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
DUT
VGS
90%
10%
10%
td(on
d( on))
tr
t on
td(o
d( of f)
t of
offf
tf
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
6
www.fairchildsemi.com
FDB016N04AL7 N-Channel PowerTrench® MOSFET
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
DU
T
+
VDS
_
I SD
L
Drive
Driver
RG
VGS
VGS
( Driver
Driver )
I SD
( DUT )
Same T
Sam
Ty
ype
as DU
DUT
T
VDD
• dv/dt contr
ontro
olllled
ed by RG
• ISD cont
contrrolled by pul
pulse
se per
periiod
Gate P
Pu
uls
lse
e W idth
D = -------------------------Ga
Gate
te Pu
Pullse Pe
Peri
ri
rio
od
10
10V
V
IFM , B
Body
ody Diode F
Fo
orwar
ard
dC
Cu
urrent
di/dt
di/dt
IRM
Body D
Diiode Revers
verse Cu
Current
VDS
( DUT )
Body Di
Diode Recove
covery dv/dt
VDD
VSD
Body D
Diiode
Forw
Forwar
ard
dV
Vo
oltage Drop
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
7
www.fairchildsemi.com
FDB016N04AL7 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
Figure 17. TO263 (D2PAK), Molded, 7-Lead, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO263-0R7
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. C1
9
www.fairchildsemi.com
FDB016N04AL7 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
F-PFS™
AccuPower™
®*
®
FRFET®
AX-CAP®*
®
SM
BitSiC™
Global Power Resource
PowerTrench
TinyBoost®
GreenBridge™
PowerXS™
Build it Now™
TinyBuck®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyCalc™
®
Green FPS™ e-Series™
QFET
CorePOWER™
TinyLogic®
CROSSVOLT™
QS™
Gmax™
TINYOPTO™
CTL™
GTO™
Quiet Series™
TinyPower™
Current Transfer Logic™
IntelliMAX™
RapidConfigure™
TinyPWM™
DEUXPEED®
ISOPLANAR™
™
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder
TranSiC™
EcoSPARK®
and Better™
Saving our world, 1mW/W/kW at a time™
TriFault Detect™
EfficentMax™
SignalWise™
MegaBuck™
TRUECURRENT®*
ESBC™
MICROCOUPLER™
SmartMax™
μSerDes™
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SMART START™
®
MicroPak™
Solutions for Your Success™
MicroPak2™
SPM®
Fairchild®
STEALTH™
MillerDrive™
UHC®
Fairchild Semiconductor®
Ultra FRFET™
SuperFET®
MotionMax™
FACT Quiet Series™
UniFET™
SuperSOT™-3
mWSaver®
FACT®
VCX™
SuperSOT™-6
OptoHiT™
FAST®
®
VisualMax™
SuperSOT™-8
OPTOLOGIC
FastvCore™
®
®
OPTOPLANAR
VoltagePlus™
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FETBench™
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XS™
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仙童™
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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