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N-Channel PowerTrench® MOSFET
150 V, 115 A, 6.9 mΩ
Features
General Description
This N-Channel MOSFET is produced using ON
Semiconductor’s advance PowerTrench® process that has
been especially tailored to minimize the on-state resistance
while maintaining superior ruggedness and switching
performance for industrial applications.
Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A
Fast Switching Speed
Low Gate Charge
High Performance Trench Technology for Extremely Low
RDS(on)
Applications
High Power and Current Handling Capability
Industrial Power Supply
RoHS Compliant
Industrial Automation
Industrial Motor Drive
Battery Operated tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch
D(Pin4, tab)
4
12
3
56
7
1. Gate
2. Source/Kelvin Sense
3. Source/Kelvin Sense
4. Drain
5. Source
6. Source
7. Source
G
(Pin1)
D2-PAK
(TO263)
S(Pin2,3,5,6,7)
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
-Continuous
ID
PD
TJ, TSTG
Units
V
±20
V
TC = 25°C
(Note 5)
TC = 100°C
(Note 5)
81
(Note 4)
636
-Pulsed
EAS
Ratings
150
Single Pulse Avalanche Energy
(Note 3)
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
115
A
633
mJ
250
(Note 1a)
Operating and Storage Junction Temperature Range
W
3.8
-55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
0.6
(Note 1a)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDB0690N1507L
Device
FDB0690N1507L
©2016 Semiconductor Components Industries, LLC.
August-2017, Rev. 3
Package
D2-PAK-7L
1
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Publication Order Number:
FDB0690N1507L/D
FDB0690N1507L N-Channel PowerTrench® MOSFET
FDB0690N1507L
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 120 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4
V
150
V
106
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
2
3.3
-13
mV/°C
VGS = 10 V, ID = 17 A
5.4
6.9
VGS = 10 V, ID = 17 A, TJ= 150°C
12.9
16.5
VDS = 10 V, ID = 17 A
60
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
6265
8775
pF
502
705
pF
25
40
pF
Ω
2.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 17 A,
VGS = 10 V, RGEN = 6 Ω
VDD = 75 V, ID = 17 A,
VGS = 10 V
35
56
ns
30
48
ns
53
85
ns
14
25
ns
82
115
nC
29
nC
15
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
115
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
636
A
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 17 A
(Note 2)
IF = 17 A, di/dt = 100 A/μs
0.8
1.2
V
106
170
ns
226
362
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper.
b) 62.5 °C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 633 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 65 A, VDD = 135 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 94 A.
4. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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2
FDB0690N1507L N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
180
VGS = 10 V
ID, DRAIN CURRENT (A)
150
VGS = 7 V
120
VGS = 6.5 V
90
VGS = 6 V
60
VGS = 5.5 V
30
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
3.0
VGS = 5.5 V
2.5
VGS = 6 V
2.0
VGS = 6.5 V
1.5
1.0
0.5
0
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.5
1.0
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
2.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
90
TJ = 25 oC
60
30
TJ = -55 oC
0
2
3
4
5
6
7
180
ID = 17 A
20
TJ = 150 oC
10
0
TJ = 25 oC
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 5 V
120
TJ = 175 oC
150
Figure 4. On-Resistance vs. Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
120
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
Figure 3. Normalized On Resistance
vs. Junction Temperature
180
90
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
ID = 17 A
VGS = 10 V
2.5
60
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
3.0
VGS = 7 V VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
180
100
VGS = 0 V
10
TJ = 175 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
1.2
FDB0690N1507L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
ID = 17 A
Ciss
VDD = 50 V
8
VDD = 75 V
6
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10000
10
VDD = 100 V
4
1000
2
0
Coss
100
Crss
10
f = 1 MHz
VGS = 0 V
0
20
40
60
80
1
0.1
100
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs. Drain
to Source Voltage
1000
ID, DRAIN CURRENT (A)
500
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100
TJ = 25 oC
10
TJ = 150 oC
10 μs
100
10
1
THIS AREA IS
LIMITED BY rDS(on)
100 μs
SINGLE PULSE
TJ = MAX RATED
1 ms
o
RθJC = 0.6 C/W
1
0.01
0.1
1
10
100
TC = 25 oC
0.1
0.1
1000
1
10 ms
CURVE BENT TO
MEASURED DATA
10
100 ms
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (ms)
Figure 10. Forward Bias Safe
Operating Area
Figure 9. Unclamped Inductive
Switching Capability
100000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
o
RθJC = 0.6 C/W
o
TC = 25 C
10000
1000
100
10
-5
10
-4
10
-3
-2
10
10
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
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4
-1
10
1
FDB0690N1507L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.001
-5
10
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 0.6oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
-4
10
-3
-2
10
10
Figure 12. Junction-to-Case Transient Thermal Response Curve
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5
-1
10
t, RECTANGULAR PULSE DURATION (sec)
1
FDB0690N1507L N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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