FDP2570/FDB2570
150V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically for switching on the primary side in the
isolated DC/DC converter application. Any application
requiring a 150V MOSFETs with low on-resistance and
fast switching will benefit.
• 22 A, 150 V.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• Fast switching speed
RDS(ON) = 80 mΩ @ VGS = 10 V
RDS(ON) = 90 mΩ @ VGS = 6 V
• Low gate charge (40nC typical)
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• 175°C maximum junction temperature rating
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
FDB Series
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
150
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
A
– Continuous
(Note 1)
22
– Pulsed
(Note 1)
50
A
93
W
PD
Total Power Dissipation @ TC = 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Derate above 25°C
0.63
W°/C
–65 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
1.6
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB2570
FDB2570
13’’
24mm
800 units
FDP2570
FDP2570
Tube
n/a
45 units
2001 Fairchild Semiconductor Corporation
FDP2570/FDB2570 Rev C(W)
FDP2570/FDB2570
August 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 75 V,
ID = 11 A
375
mJ
11
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 120 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
4
V
On Characteristics
150
V
154
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
–7
VGS = 10 V,
ID = 11 A
ID = 10 A
VGS = 6.0 V,
VGS = 10 V, ID = 11 A, TJ = 125°C
61
63
127
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 11 A
VDS = 75 V,
f = 1.0 MHz
V GS = 0 V,
2
2.6
mV/°C
80
90
175
25
mΩ
A
39
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
1911
pF
106
pF
33
pF
(Note 2)
VDD = 75 V,
VGS = 10 V,
VDS = 75 V,
VGS = 10 V
ID = 1 A,
RGEN = 6 Ω
ID = 11 A,
12
22
5
10
ns
ns
33
53
ns
23
37
ns
40
56
nC
7
nC
12
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 11 A
Voltage
(Note 2)
0.83
22
A
1.3
V
Notes:
1. Calculated continuous current based on maximum allowable junction temperature.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP2570/FDB2570 Rev C(W)
FDP2570/FDB2570
Electrical Characteristics
FDP2570/FDB2570
Typical Characteristics
1.6
ID, DRAIN CURRENT (A)
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
50
5.0V
4.5V
40
30
20
4.0V
10
1.4
VGS = 4.0V
4.5V
1.2
5.0V
10V
1
0.8
0
0
3
6
9
12
0
15
5
10
Figure 1. On-Region Characteristics.
20
25
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.9
0.35
ID = 5.5 A
ID = 11 A
VGS = 10V
2.5
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
15
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
2.1
1.7
1.3
0.9
0.5
0.3
0.25
0.2
TA = 125oC
0.15
0.1
TA = 25oC
0.05
0.1
-65
-35
-5
25
55
85
115
145
0
175
3
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
5
6
7
8
VGS, GATE TO SOURCE VOLTAGE (V)
9
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
IS, REVERSE DRAIN CURRENT (A)
50
VDS = 50V
ID, DRAIN CURRENT (A)
4
40
30
20
TA = 125oC
25oC
10
-55oC
2.5
3
3.5
4
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2
VGS = 0V
10
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP2570/FDB2570 Rev C(W)
FDP2570/FDB2570
Typical Characteristics
3000
VDS = 25V
ID = 11A
50V
f = 1MHz
VGS = 0 V
2500
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
75V
6
4
CISS
2000
1500
1000
COSS
2
500
CRSS
0
0
0
6
12
18
24
30
36
0
42
20
Figure 7. Gate Charge Characteristics.
80
100
120
P(pk), PEAK TRANSIENT POWER (W)
2000
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
60
Figure 8. Capacitance Characteristics.
100
10us
100us
1ms
10ms
100ms
10
DC
VGS = 10V
SINGLE PULSE
RθJC = 1.6oC/W
1
TA = 25oC
0.1
1
10
100
1000
SINGLE PULSE
RθJA = 1.6°C/W
TA = 25°C
1500
1000
500
0
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJC
RθJC = 1.6 °C/W
0.2
0.1
P(pk)
0.1
t1
0.05
t2
TJ - TA = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDP2570/FDB2570 Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
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QS™
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Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
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UHC™
UltraFET
VCX™
STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
