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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FDB2614
N-Channel PowerTrench® MOSFET
200 V, 62 A, 27 mΩ
Features
General Description
• RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
superior switching performance.
• High Performance Trench technology for Extremely Low
RDS(on)
• Low Gate Charge
Applications
• High Power and Current Handing Capability
• Synchronous Rectification
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
D
G
G
D2-PAK
S
S
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted
Parameter
VDS
Drain-Source Voltage
FDB2614
Unit
200
V
± 30
V
62
39.3
A
A
(Note 1)
see Figure 9
A
145
mJ
VGS
Gate-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
(Note 2)
(Note 3)
dv/dt
Peak Diode Recovery dv/dt
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(TC = 25°C)
- Derate above 25°C
4.5
V/ns
260
2.1
W
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
RθJA
2
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max.
©2006 Fairchild Semiconductor Corporation
FDB2614 Rev. C1
1
FDB2614
Unit
0.48
°C/W
62.5
°C/W
40
°C/W
www.fairchildsemi.com
FDB2614 — N-Channel PowerTrench® MOSFET
November 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB2614
FDB2614
D2-PAK
330 mm
24 mm
800 units
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
200
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.2
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
---
---
1
500
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
3.0
4.0
5.0
V
RDS(on)
Static Drain-Source On-Resistance
VGS = 10V, ID = 31A
--
22.9
27
mΩ
gFS
Forward Transconductance
VDS = 10V, ID = 31A
--
72
--
S
--
5435
7230
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
--
505
675
pF
--
110
165
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100V, ID = 62A
VGS = 10V, RGEN = 25Ω
(Note 4)
VDS = 100V, ID = 62A
VGS = 10V
(Note 4)
--
77
165
ns
--
284
560
ns
--
103
220
ns
--
162
335
ns
--
76
99
nC
--
35
--
nC
--
18
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
62
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
186
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 62A
--
--
1.2
V
trr
Reverse Recovery Time
--
145
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 62A
dIF/dt =100A/μs
--
0.81
--
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 62A, di/dt ≤ 100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2006 Fairchild Semiconductor Corporation
FDB2614 Rev. C1
2
www.fairchildsemi.com
FDB2614 — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1000
V GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
ID,Drain Current[A]
ID,Drain Current[A]
500
10
* Notes :
1. V DS = 10V
2. 250 μ s Pulse Test
100
o
150 C
10
o
-55 C
* Notes :
1. 250μ s Pulse Test
o
25 C
o
1
0.1
2. T C = 25 C
1
V DS,Drain-Source Voltage[V]
1
10
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
0.06
1000
o
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
0.05
VGS = 10V
0.03
VGS = 20V
0.02
* Notes :
1. VGS = 0V
2. ID = 250μ A
100
50
100
150
ID, Drain Current [A]
o
10
1
0.2
200
VGS, Gate-Source Voltage [V]
Capacitances [pF]
C oss
* Note:
1. VGS = 0V
2. f = 1MHz
1
10
V DS, Drain-Source Voltage [V]
©2006 Fairchild Semiconductor Corporation
FDB2614 Rev. C1
1.0
1.2
V DS = 40V
C iss
0
0.1
0.8
10
6000
C rss
0.6
Figure 6. Gate Charge Characteristics
C iss = C gs + C gd ( C ds = shorted )
C oss = C ds + C gd
C rss = C gd
3000
0.4
V SD , Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
9000
o
T A = 150 C
T A = 25 C
0.015
0
4
6
V GS ,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
* Note : T J = 25 C
0.04
2
8
3
V DS = 160V
6
4
2
0
30
V DS = 100V
* Note : ID = 62A
0
20
40
60
80
Q g , Total Gate Charge [nC]
100
www.fairchildsemi.com
FDB2614 — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On-Resistance Variation vs. Temperature
3.0
rDS(on), [Normalized]
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0V
2. ID = 250 μ A
-50
0
50
100
o
T J, Junction Temperature [ C]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
0.0
-100
150
Figure 9. Maximum Safe Operating Area
* Notes :
1. VGS = 10V
2. ID = 31A
0.5
-50
0
50
100
150
o
TJ, Junction Temperature [ C ]
200
Figure 10. Maximum Drain Current vs. CaseTemperature
1000
100
60
100 μs
ID, Drain Current [A]
ID, Drain Current [A]
70
1ms
10
10 ms
Operation in This Area
is Limited by R DS(on)
1
DC
* Notes :
40
30
20
o
0.1
1. TC = 25 C
10
o
0.01
50
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
400
50
75
100
125
o
T C , Case Temperature [ C ]
150
ZθJC(t), Thermal Response [oC/W]
Figure 11. Transient Thermal Response Curve
10
0
0.5
10
-1
0.2
PDM
0.1
t1
0.05
10
-2
0.02
0.01
t2
* Notes :
o
1. Zθ JC(t) = 0.48 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
Single pulse
10
-3
10
-5
10
-4
-3
10
10
-2
-1
10
0
10
10
1
Rectangular Pulse Duration [sec]
©2006 Fairchild Semiconductor Corporation
FDB2614 Rev. C1
4
www.fairchildsemi.com
FDB2614 — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDB2614 — N-Channel PowerTrench® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
50KΩ
50K
Ω
200nF
200n
F
12V
VGS
Same
Same T
Ty
ype
as DU
DUT
T
Qg
300nF
300n
F
VDS
VGS
Qgs
Qgd
DUT
DU
T
IG = const.
Charrge
Cha
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
DUT
VGS
10%
10%
td(on
d( on))
tr
td(o
d( of f)
t on
t of
offf
tf
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDS
DSS
S - VDD
L
BVDS
DSS
S
IAS
ID
RG
VGS
VDD
ID (t)
tp
©2006 Fairchild Semiconductor Corporation
FDB2614 Rev. C1
VDS (t)
VDD
DUT
tp
5
Ti
Tim
me
www.fairchildsemi.com
FDB2614 — N-Channel PowerTrench® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
Driv
er
RG
VGS
VGS
( Driver
Driver )
I SD
( DUT )
Same T
Same
Ty
ype
as DUT
VDD
• dv/dt cont
ntrrolled b
byy RG
• ISD con
onttrol
ollled by pu
pullse pe
perriod
Gate P
Pul
ulsse W idth
ul
D = -------------------------Gate
Ga
te Pu
Pullse Pe
Perriod
10V
10
V
IFM , Body
Body Di
Diod
ode
e Fo
Forward Cu
Curr
rren
entt
di/d
di
/dtt
IRM
Body
Bo
dy D
Diiod
ode
e Re
Reverse C
Cu
urren
entt
VDS
( DUT )
Body
Bo
dy Di
Diod
ode
e Recov
cove
ery dv
dv/d
/dtt
VSD
VDD
Body D
Body
Diiode
For
Forw
ward V
Vol
olttag
age
e Drop
Drop
©2006 Fairchild Semiconductor Corporation
FDB2614 Rev. C1
6
www.fairchildsemi.com
FDB2614 — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-263 2L (D2PAK)
Figure 16. 2LD, TO263, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
Dimension in Millimeters
©2006 Fairchild Semiconductor Corporation
FDB2614 Rev. C1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2006 Fairchild Semiconductor Corporation
FDB2614 Rev. C1
8
www.fairchildsemi.com
FDB2614 — N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
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AccuPower™
®
FRFET®
AX-CAP®*
®*
®
SM
BitSiC™
Global Power Resource
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GreenBridge™
PowerXS™
Build it Now™
TinyBoost®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyBuck®
®
Green FPS™ e-Series™
QFET
CorePOWER™
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Gmax™
CROSSVOLT™
TinyLogic®
Quiet Series™
GTO™
CTL™
TINYOPTO™
RapidConfigure™
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ISOPLANAR™
DEUXPEED®
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT®*
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®
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Solutions for Your Success™
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®
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SuperSOT™-8
OPTOLOGIC®
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