FDB28N30TM

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 mΩ Features Description • RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 39 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Uninterruptible Power Supply • AC-DC Power Supply D D G S G D2-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Continuous (TC = 25oC) FDB28N30 300 Unit V ±30 V 28 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 28 A EAR Repetitive Avalanche Energy (Note 1) 25 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns - Continuous (TC = 100oC) - Pulsed (Note 1) 112 A (Note 2) 588 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL A 19 - Derate above 25oC 250 W 2.0 W/oC -55 to +150 oC 300 oC FDB28N30 Unit Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction to Case, Max. 0.5 RθJA Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max. 40 RθJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. ©2007 Fairchild Semiconductor Corporation FDB28N30 Rev. C1 1 o C/W 62.5 www.fairchildsemi.com FDB28N30 — N-Channel UniFETTM MOSFET November 2013 Part Number FDB28N30 Top Mark FDB28N30 Electrical Characteristics Symbol Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 300 - - V - 0.4 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC ID = 250 μA, Referenced to 25oC VDS = 300 V, VGS = 0 V - - 1 VDS = 240 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 3.0 - 5.0 V - 0.108 0.129 Ω - 24.8 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 14 A VDS = 40 V, ID = 14 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 240 V, ID = 28 A, VGS = 10 V (Note 4) - 1690 2250 pF - 305 405 pF - 35 50 pF - 39 50 nC - 12 - nC - 17 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 150 V, ID = 28 A, VGS = 10 V, RG = 25 Ω (Note 4) - 35 80 ns - 135 280 ns - 79 168 ns - 69 148 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 28 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 112 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 28 A - - 1.4 V trr Reverse Recovery Time - 279 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 28 A, dIF/dt = 100 A/μs - 2.7 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1.5 mH, IAS = 28 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 28 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2007 Fairchild Semiconductor Corporation FDB28N30 Rev. C1 2 www.fairchildsemi.com FDB28N30 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6V 5.5 V ID,Drain Current[A] ID,Drain Current[A] 100 10 10 o 150 C o -55 C o 25 C 1 * Notes : 1. 250μs Pulse Test 1 * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.5 0.4 1 VDS,Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 4 6 8 VGS,Gate-Source Voltage[V] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.30 200 IS, Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 100 0.25 0.20 VGS = 10V 0.15 VGS = 20V o 150 C o 25 C 10 Notes: 1. VGS = 0V o 0.10 * Note : TJ = 25 C 0 25 50 ID, Drain Current [A] 1 0.0 75 Figure 5. Capacitance Characteristics 4500 10 VGS, Gate-Source Voltage [V] Capacitances [pF] Coss * Note: 1. VGS = 0V 2. f = 1MHz Ciss 1500 Crss 0 -1 10 0 1 10 10 VDS, Drain-Source Voltage [V] ©2007 Fairchild Semiconductor Corporation FDB28N30 Rev. C1 2.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 2. 250μs Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 6 4 2 0 30 3 VDS = 60V VDS = 150V VDS = 240V 8 *Note: ID = 28A 0 8 16 24 32 Qg, Total Gate Charge [nC] 40 www.fairchildsemi.com FDB28N30 — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 * Notes : 1. VGS = 10V 2. ID = 14A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 30 200 10μs 100 25 100μs ID, Drain Current [A] ID, Drain Current [A] 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area 1ms 10 10ms DC Operation in This Area is Limited by R DS(on) 1 * Notes : 0.1 o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 1 20 15 10 5 o 0.01 2.5 10 100 VDS, Drain-Source Voltage [V] 0 25 500 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 Single pulse 1E-3 -5 10 ©2007 Fairchild Semiconductor Corporation FDB28N30 Rev. C1 t2 * Notes : o 1. ZθJC(t) = 0.5 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] 4 -1 10 0 10 www.fairchildsemi.com FDB28N30 — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) FDB28N30 — N-Channel UniFETTM MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation FDB28N30 Rev. C1 5 www.fairchildsemi.com FDB28N30 — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation FDB28N30 Rev. C1 6 www.fairchildsemi.com FDB28N30 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 ©2007 Fairchild Semiconductor Corporation FDB28N30 Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2007 Fairchild Semiconductor Corporation FDB28N30 Rev. C1 8 www.fairchildsemi.com FDB28N30 — N-Channel UniFETTM MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Sync-Lock™ F-PFS™ ® AX-CAP®* FRFET® ®* ® SM Global Power Resource PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Programmable Active Droop™ Green FPS™ CorePLUS™ TinyBuck® ® QFET Green FPS™ e-Series™ CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® μSerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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