FDB38N30U

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB38N30U N-Channel UniFETTM Ultra FRFETTM MOSFET 300 V, 38 A, 120 mΩ Features Description • RDS(on) = 120 mΩ (Max.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 56 nC) • Low Crss (Typ. 55 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Uninterruptible Power Supply • LCD/LED/PDP TV • AC-DC Power Supply D D G G D2-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current - Continuous (TC = 25oC) Unit V ±30 V 38 - Continuous (TC = 100oC) - Pulsed FDB38N30U 300 22.8 A IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 1) 152 A (Note 2) 722 mJ IAR Avalanche Current (Note 1) 38 A EAR Repetitive Avalanche Energy (Note 1) 31.3 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL - Derate Above 25oC 313 W 2.5 W/oC -55 to +150 oC 300 oC FDB38N30U Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.4 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2012 Fairchild Semiconductor Corporation FDB38N30U Rev. C1 1 oC/W www.fairchildsemi.com FDB38N30U — N-Channel UniFETTM Ultra FRFETTM MOSFET November 2013 Part Number FDB38N30U Top Mark FDB38N30U Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 300 - - V - 0.33 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC ID = 250 μA, Referenced to 25oC VDS = 300 V, VGS = 0 V - - 25 VDS = 240 V, TC = 125oC - - 250 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 19 A - 0.103 0.120 Ω gFS Forward Transconductance VDS = 20 V, ID = 19 A - 30 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 2510 3340 pF - 470 625 pF - 55 85 pF - 56 73 nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 240 V, ID = 38 A VGS = 10 V (Note 4) - 14 - nC - 24 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 150 V, ID = 38 A, VGS = 10 V, RG = 25 Ω (Note 4) - 33 76 ns - 80 170 ns - 133 276 ns - 62 134 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 38 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 152 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A - - 1.4 V trr Reverse Recovery Time 60 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 38 A, dIF/dt = 100 A/μs - 0.097 - μC Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 1 mH, IAS = 38 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 38 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially Independent of Operating Temperature Typical Characteristics. ©2012 Fairchild Semiconductor Corporation FDB38N30U Rev. C1 2 www.fairchildsemi.com FDB38N30U — N-Channel UniFETTM Ultra FRFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 10 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 100 1 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 1 20 0.26 200 0.24 100 0.20 0.16 VGS = 10V VGS = 20V 0.12 3 4 5 6 7 8 VGS, Gate-Source Voltage[V] *Note: TC = 25 C 0 20 40 60 ID, Drain Current [A] 80 o o 25 C 10 *Notes: 1. VGS = 0V 1 0.0 100 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 6. Gate Charge Characteristics 10000 10 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] 10 150 C o 0.08 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz 100 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDB38N30U Rev. C1 6 4 2 0 30 3 VDS = 60V VDS = 150V VDS = 240V 8 *Note: ID = 38A 0 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FDB38N30U — N-Channel UniFETTM Ultra FRFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 300 30μs 100 100μs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 1ms 10 DC 1 0.9 -40 0 40 80 120 o TJ, Junction Temperature [ C] *Notes: o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -80 10ms Operation in This Area is Limited by R DS(on) o 0.1 160 Figure 9. Maximum Drain Current vs. Case Temperature 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 500 Figure 10. Unclamped Inductive Switching Capability 40 100 IAS, AVALANCHE CURRENT (A) ID, Drain Current [A] VGS = 10V 30 20 10 o TJ = 25 oC 10 TJ = 125 oC RθJC = 0.4 C/W 0 25 50 75 100 125 o TC, Case Temperature [ C] 1 0.001 150 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 o 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 ©2012 Fairchild Semiconductor Corporation FDB38N30U Rev. C1 t2 *Notes: 0.01 -4 10 -3 -2 10 10 [sec] tRectangular Pulse Duration Duration [sec] 1, RectangularPulse 4 -1 10 1 www.fairchildsemi.com FDB38N30U — N-Channel UniFETTM Ultra FRFETTM MOSFET Typical Performance Characteristics (Continued) FDB38N30U — N-Channel UniFETTM Ultra FRFETTM MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDB38N30U Rev. C1 5 www.fairchildsemi.com FDB38N30U — N-Channel UniFETTM Ultra FRFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDB38N30U Rev. C1 6 www.fairchildsemi.com FDB38N30U — N-Channel UniFETTM Ultra FRFETTM MOSFET Mechanical Dimensions Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 ©2012 Fairchild Semiconductor Corporation FDB38N30U Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2012 Fairchild Semiconductor Corporation FDB38N30U Rev. 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