FDB390N15A

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB390N15A N-Channel PowerTrench® MOSFET 150 V, 27 A, 39 mΩ Features Description • RDS(on) = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 27 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 14.3 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) Applications • Consumer Appliances • High Power and Current Handling Capability • LED TV • RoHS Compliant • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D D G S G D2-PAK S Absolute Maximum Ratings TC = 25oC Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt unless otherwise noted. Parameter FDB390N15A 150 - DC ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC,Silicon Limited) V ±30 27 A - Continuous (TC = 100oC,Silicon Limited) 19 - Pulsed (Note 1) 108 A (Note 2) 78 mJ (Note 3) 6.0 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds. TL Unit V - Derate Above 25oC 75 W 0.5 W/oC -55 to +175 oC o 300 C Thermal Characteristics Symbol RθJC RθJA Parameter FDB390N15A Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max. ©2011 Fairchild Semiconductor Corporation FDB390N15A Rev. 1.8 Unit 2.0 1 62.5 o C/W 40 www.fairchildsemi.com FDB390N15A — N-Channel PowerTrench® MOSFET April 2015 Part Number FDB390N15A Top Mark FDB390N15A Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.1 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V o ID = 250 μA, Referenced to 25 C VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 2.0 - 4.0 V - 33.5 39.0 mΩ - 33 - S - 965 1285 pF - 96 130 pF pF μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 27 A VDS = 10 V, ID = 27 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 75 V, VGS = 0 V, f = 1 MHz - VDS = 75 V, ID = 27 A VDS = 75 V, ID = 27 A, VGS = 10 V (Note 4) f = 1 MHz 5.8 - 169 - pF 14.3 18.6 nC nC 5.0 - - 2.0 - nC - 3.5 - nC - 1.4 - Ω - 14 38 ns - 10 30 ns - 20 50 ns - 5 20 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 75 V, ID = 27 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 27 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 27 A - - 1.25 V trr Reverse Recovery Time - 63 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 27 A, VDD = 75 V, dIF/dt = 100 A/μs - 131 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. Starting TJ = 25°C, L = 3 mH, ISD = 7.2 A. 3. ISD ≤ 27 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FDB390N15A Rev. 1.8 2 www.fairchildsemi.com FDB390N15A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 200 200 10 10 o o 25 C 175 C *Notes: 1. 250μs Pulse Test o -55 C o 2. TC = 25 C 1 0.1 1 VDS, Drain-Source Voltage[V] 1 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 80 200 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 100 60 VGS = 10V 40 VGS = 20V o o 25 C 175 C 10 *Notes: 1. VGS = 0V o 20 2. 250μs Pulse Test *Note: TC = 25 C 0 20 40 60 ID, Drain Current [A] 80 1 0.4 100 Figure 5. Capacitance Characteristics 1.3 Figure 6. Gate Charge Characteristics 2000 10 1000 Ciss 100 VGS, Gate-Source Voltage [V] Capacitances [pF] 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Coss *Note: 1. VGS = 0V 2. f = 1MHz 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDB390N15A Rev. 1.8 Crss 6 4 2 0 100 200 3 VDS = 30V VDS = 75V VDS = 120V 8 *Note: ID = 27A 0 4 8 12 Qg, Total Gate Charge [nC] 16 www.fairchildsemi.com FDB390N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] *Notes: 1. VGS = 10V 2. ID = 27A 0.8 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 VGS= 10V 10μs 25 ID, Drain Current [A] ID, Drain Current [A] 1.2 30 100 100μs 10 Operation in This Area is Limited by R DS(on) 1 1ms 10ms DC *Notes: 0.1 20 15 10 o 1. TC = 25 C 5 o 2. TJ = 175 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] o RθJC = 2.0 C/W 0 25 200 Figure 11. Eoss vs. Drain to Source Voltage IAS, AVALANCHE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 30 60 90 120 VDS, Drain to Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDB390N15A Rev. 1.8 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 1.2 EOSS, [μJ] 1.6 Figure 10. Maximum Drain Current vs. Case Temperature 300 0.0 2.0 0.4 -80 200 Figure 9. Maximum Safe Operating Area 0.01 2.4 12 10 o STARTING TJ = 25 C o STARTING TJ = 150 C 1 0.01 150 4 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 20 www.fairchildsemi.com FDB390N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB390N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) ZθJC(t), Thermal Response [oC/W] Thermal Response [ZθJC] Figure 13. Transient Thermal Response Curve 3 1 0.5 0.2 PDM 0.1 0.1 t1 0.05 0.02 0.01 o 1. ZθJC(t) = 2.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 ©2011 Fairchild Semiconductor Corporation FDB390N15A Rev. 1.8 t2 *Notes: -4 10 -3 -2 10 10 Rectangular Pulse t1, Rectangular PulseDuration Duration[sec] [sec] 5 -1 10 1 www.fairchildsemi.com FDB390N15A — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDB390N15A Rev. 1.8 6 www.fairchildsemi.com FDB390N15A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDB390N15A Rev. 1.8 7 www.fairchildsemi.com 10.67 9.65 10.67 -A1.68 1.00 4 4 9.45 9.65 8.38 10.00 1.78 MAX 2 3 1 1.78 1.14 0.99 0.51 (2.12) 2 0.25 MAX PLASTIC BODY STUB 3.80 3 1 1.05 0.25 M 5.08 B AM LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL 5.08 FRONT VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL 6.22 MIN 4 -B- 4.83 4.06 1.65 1.14 4 6.86 MIN 15.88 14.61 SEE DETAIL A 2 2 3 1 3 1 BACK VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL GAGE PLANE 0.74 0.33 0.25 2.79 1.78 0.25 MAX (5.38) SEATING PLANE SCALE: 2X 0.10 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLERANCING PER ASME Y14.5 - 2009. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO254P1524X482-3N B F) FILENAME: TO263A02REV8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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