FDB5690

FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description Features • 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • Critical DC electrical parameters specified at evevated temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low RDS(ON). • 175°C maximum junction temperature rating. D D G G D G TO-220 S FDP Series S TO-263AB S FDB Series Absolute Maximum Ratings Symbol VDSS TC = 25°C unless otherwise noted FDP5690 Parameter FDB5690 Units Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous 32 A - Pulsed 100 PD TJ, TSTG Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 58 0.4 W -65 to +175 W/°C °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDB5690 FDB5690 13’’ 24mm 800 FDP5690 FDP5690 Tube N/A 45 2000 Fairchild Semiconductor International FDP5690/FDB5690 Rev. C FDP5690/FDB5690 July 2000 Symbol Parameter Test Conditions Drain-Source Avalanche Ratings WDSS IAR Tc = 25°C unless otherwise noted Min Typ Max Units 80 mJ 32 A (Note1) Single Pulse Drain-Source VDD = 30 V, ID = 32A Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics BVDSS ∆BVDSS ∆T J IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VDS = 48 V, VGS = 0 V 1 VGS = 20 V, VDS = 0 V 100 VGS = -20 V, VDS = 0 V -100 On Characteristics V 60 mV/°C 61 µA nA nA (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆T J RDS(on) Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -6.4 0.021 0.042 0.024 ID(on) On-State Drain Current VGS = 10 V, ID = 16 A, VGS = 10 V, ID = 16 A,TJ = 125°C VGS = 6 V, ID = 15 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 16 A Static Drain-Source On-Resistance 2 2.4 4 V mV/°C 0.027 0.055 0.032 Ω 50 A 32 S 1120 pF 160 pF 80 pF Dynamic Characteristics VDS = 25 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics (Note 1) VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 24 39 ns tf Turn-Off Fall Time 10 18 ns Qg Total Gate Charge 23 33 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 15 V, ID = 16 A, VGS = 10 V 10 18 ns 9 18 ns 3.9 nC 6.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 16 A Voltage (Note 1) (Note 1) 0.92 32 1.2 A V Note: 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDP5690/FDB5690 Rev. C FDP5690/FDB5690 Electrical Characteristics FDP5690/FDB5690 Typical Characteristics 80 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) VGS = 10V 70 6.0V 7.0V 60 5.0V 50 40 4.5V 30 20 4.0V 10 2 1.6 4.5V 1.4 2 4 6 8 5.0V 6.0V 1.2 7.0V 10V 1 0 0 VGS = 4.0V 1.8 0.8 10 0 VDS, DRAIN-SOURCE VOLTAGE (V) 20 40 60 80 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 ID = 16A ID = 16A VGS = 10V 2 RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0.05 o TA = 125 C 0.04 0.03 0.02 o TA = 25 C 0.01 0 175 3 4 5 6 7 8 9 10 1.2 1.4 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 100 o TA = -55 C ID, DRAIN CURRENT (A) 50 o IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25 C o 125 C 40 30 20 10 VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP5690/FDB5690 Rev. C (continued) 1600 f = 1MHz VGS = 0 V ID = 16A VDS = 10V 8 20V 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 1200 CISS 800 400 2 COSS CRSS 0 0 0 5 10 15 20 0 25 10 20 30 40 50 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 2500 1000 o TA = 25 C 10ms POWER (W) RDS(ON) LIMIT SINGLE PULSE o RθJC = 2.6 C/W 2000 1ms 100 100ms 1s 10s 10 DC 1500 1000 VGS = 10V SINGLE PULSE 1 o 500 RθJC = 2.3 C/W o TC = 25 C 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (ms) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE ID DRAIN CURRENT (A) FDP5690/FDB5690 Typical Characteristics D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R θJC = 2.6 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.02 t1 0.03 0.01 0.02 0.01 0.01 t2 TJ - TC = P * RθJC (t) Single Pulse Duty Cycle, D = t1 /t2 0.1 1 10 100 1000 t1 ,TIME (ms) Figure 11. Transient Thermal Response Curve. FDP5690/FDB5690 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E