FDB5800

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6 mΩ Features Description • RDS(on) = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • High Performance Trench Technology for Extermly Low RDS(on) • Low Gate Charge • High Power and Current Handing Capability Applications • RoHs Compliant • Power tools • Motor drives and Uninterruptible Power Supplies D D G G D2-PAK S S Absolute Maximum Ratings T Symbol VDSS VGS o C = 25 C unless otherwise noted. Drain to Source Voltage FDB5800 60 Unit V Gate to Source Voltage ±20 V Drain Current - Continuous (TC < 102oC, VGS = 10 V) 80 A Parameter o ID - Continuous (TC < 90 C, VGS = 5 V) - Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) - Pulsed EAS Single Pulse Avalanche Energy PD TJ, TSTG (Note 1) 80 A 14 A Figure 4 A 652 mJ - Power Dissipation 242 - Derate above 25oC - Operating and Storage Temperature 1.61 W/oC W -55 to 175 C o Thermal Characteristics RθJC Thermal Resistance Junction to Case TO-263, Max. RθJA Thermal Resistance Junction to Ambient TO-263, Max. RθJA 2 ( Note 2) Thermal Resistance Junction to Ambient TO-263, 1in copper pad area ©2005 Fairchild Semiconductor Corporation FDB5800 Rev. C2 1 0.62 oC/W 62.5 oC/W 43 o C/W www.fairchildsemi.com FDB5800 — N-Channel Logic Level PowerTrench® MOSFET November 2013 Part Number FDB5800 Package D2-PAK Top Mark FDB5800 Electrical Characteristics T Symbol Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units o C = 25 C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250 µA, VGS = 0 V VDS = 48 V VGS = 0 V VGS = ±20 V TC = 150oC 60 - - - - 1 - - 250 - - ±100 nA V µA On Characteristics VGS(TH) Gate to Source Threshold Voltage rDS(ON) Drain to Source On Resistance VGS = VDS, ID = 250 µA 1.0 - 2.5 - 4.6 6.0 ID = 80 A, VGS = 4.5 V - 5.8 7.2 - 5.5 7.0 - 10 12.6 - 6625 - pF - 628 - pF - 262 - pF - 1.4 - Ω - 104 135 nC - 55 72 nC - 6.0 - nC - 18.4 - nC - 12.5 - nC - 20.1 - nC ID = 80 A, VGS = 10 V ID = 80 A, VGS = 5 V ID = 80 A, VGS = 10 V, TJ = 175oC mΩ Dynamic Characteristics CISS Input Capacitance CRSS Reverse Transfer Capacitance Qg(TOT) Total Gate Charge at 10V Qg(TH) Threshold Gate Charge Qgs2 Gate Charge Threshold to Plateau COSS Output Capacitance RG Gate Resistance Qg(5) Total Gate Charge at 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 15 V, VGS = 0 V, f = 1 MHz VGS = 0.5 V, f = 1 MHz VGS = 0 V to 10 V VGS = 0 V to 5 V VGS = 0 V to 1 V VDD = 30 V ID = 80 A Ig = 1.0 mA Switching Characteristics (VGS = 5V) tON Turn-On Time - - 62.1 ns Turn-On Delay Time - 20.3 - ns tr Rise Time - 22.0 - ns - 27.1 - ns tf td(ON) VDD = 30 V, ID = 80 A VGS = 5 V, RGS = 2 Ω td(OFF) Turn-Off Delay Time Fall Time - 12.1 - ns tOFF Turn-Off Time - - 59.0 ns Drain-Source Diode Characteristics VSD tr QSD Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 80 A - - 1.25 V ISD = 40 A - - 1.0 V - - 44 ns ISD = 60 A, dISD/dt = 100 A/µs - - 57 nC ISD = 60 A, dISD/dt = 100 A/µs Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 36A, VDD = 54V, VGS = 10V. 2: Pulse width = 100s. ©2005 Fairchild Semiconductor Corporation FDB5800 Rev. C2 2 www.fairchildsemi.com FDB5800 — N-Channel Logic Level PowerTrench® MOSFET Package Marking and Ordering Information 140 1.0 120 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 CURRENT LIMITED BY PACKAGE 100 VGS =10V 80 60 VGS = 5V 40 RθJC = 0.62°C/W 20 0 0 25 50 75 100 150 125 TC , CASE TEMPERATURE 0 175 25 50 (oC) 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 ZθJC, NORMALIZED THERMAL IMPEDANCE 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RθJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) 1000 TC = 25oC FOR TEMPERATURES TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 VGS = 5V 150 100 50 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) Figure 4. Peak Current Capability ©2005 Fairchild Semiconductor Corporation FDB5800 Rev. C2 3 www.fairchildsemi.com FDB5800 — N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TC = 25°C unless otherwise noted 1000 500 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] IAS, AVALANCHE CURRENT (A) ID, DRAIN TCURRENT (A) 10µs 100 100µs 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms DC 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 100 Figure 6. Unclamped Inductive Switching Capability VDS = 6V 100 TA = 125oC 60 40 1 2 3 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 100 80 3.5V 60 40 20 4 3.0V 0 5 0 VGS, GATE TO SOURCE VOLTAGE (V) RDS(ON), ON-RESISTANCE(OHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.012 TA = 175oC 0.010 0.008 TA = 25oC 0.006 0.004 0.002 4 6 8 2.0 2.0 ID = 80A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.6 - 80 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. On-Resistance Variation vs Gate-to- ©2005 Fairchild Semiconductor Corporation FDB5800 Rev. C2 1.5 2.2 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.8 2 1.0 Figure 8. Saturation Characteristics 0.016 0.014 0.5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics ID = 20A 4.0V 120 TA = -55oC 0 4.5V 5.0V TA = 25oC 20 0 10V 140 ID, DRAIN TCURRENT (A) ID, DRAIN TCURRENT (A) 160 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 80 1000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 160 120 100 10 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area 140 1 0.1 - 40 0 40 80 120 TJ, AMBIENT TEMPERATURE (oC) 160 200 Figure 10. Normalized Drain to Source On 4 www.fairchildsemi.com FDB5800 — N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TC = 25°C unless otherwise noted 1.4 1.2 NORMALIZED GATE THRESHOLD VOLTAGE 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250µA 1.0 0.8 0.6 0.4 0.2 - 80 - 40 0 40 80 120 TJ, AMBIENT TEMPERATURE (oC) 160 1.1 1.0 0.9 - 80 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature - 40 0 40 80 120 TJ, AMBIENT TEMPERATURE (oC) 160 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 20000 10000 VDD =30V CISS VGS, GATE- SOURCE VOLTAGE CAPACITANCE (pF) ID = 250µA COSS 1000 f = 1MHz VGS = 0V CRSS 8 6 4 WAVEFORMS IN ASCENDING ORDER: ID = 80A ID = 1A 2 0 100 0.1 1 10 0 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 60 80 100 Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage ©2005 Fairchild Semiconductor Corporation FDB5800 Rev. C2 20 Figure 14. Gate Charge Waveforms for Constant Gate Current 5 www.fairchildsemi.com FDB5800 — N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TC = 25°C unless otherwise noted FDB5800 — N-Channel Logic Level PowerTrench® MOSFET Mechanical Dimensions Figure 15. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 ©2005 Fairchild Semiconductor Corporation FDB5800 Rev. C2 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2005 Fairchild Semiconductor Corporation FDB5800 Rev. C2 7 www.fairchildsemi.com FDB5800 — N-Channel Logic Level PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® SM BitSiC™ Global Power Resource PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ SuperSOT™-6 OptoHiT™ FAST® VCX™ SuperSOT™-8 OPTOLOGIC® FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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