FDB6030L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com                                                                                                                                                                                                                FDP6030L/FDB6030L N-Channel Logic Level PowerTrenchΝ MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 48 A, 30 V RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V • Critical DC electrical parameters specified at elevated temperature These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • 175°C maximum junction temperature rating It has been optimized for low gate charge, low RDS(ON) and fast switching speed. D D G G D TO-220 S G S TO-263AB FDP Series FDB Series Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current Ratings Units ± 20 V 48 A 30 – Continuous (Note 1) – Pulsed PD S 150 52 W 0.3 W/°C –65 to +175 °C °C/W Total Power Dissipation @ TC = 25°C Derate above 25°C TJ, TSTG V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.9 RθJA Thermal Resistance, Junction-to-Ambient 62.5 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6030L FDB6030L 13’’ 24mm 800 units FDP6030L FDP6030L Tube n/a 45 2003 Fairchild Semiconductor Corporation FDP6030L/FDB6030L Rev E(W) FDP6030L/FDB6030L August 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Drain-Source Avalanche Ratings (Note 1) EAS IAS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, Min Typ ID = 26 A Max Units 100 mJ 26 A Off Characteristics 30 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 20 V, VDS = 0 V ± 100 nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C mV/°C 23 (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On– Resistance ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C 1 1.9 3 V mV/°C –5 ID(on) On–State Drain Current VGS = 10 V, ID = 26 A VGS = 4.5 V, ID = 21 A VGS= 10 V, ID = 26 A, TJ=125°C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10V, ID = 26 A 68 VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1250 pF 330 pF 155 pF VGS = 15 mV, f = 1.0 MHz 1.3 Ω VDD = 15V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 11 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 7.9 10.2 13.0 13 17 20 60 mΩ A S (Note 2) VDS = 15 V, VGS = 5 V ID = 26 A, Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 26 A IF = 26 A, diF/dt = 100 A/µs (Note 1) ns 12 22 ns 29 46 ns 12 21 ns 13 18 nC 3.9 nC 5.2 nC Drain–Source Diode Characteristics and Maximum Ratings IS 20 0.92 48 A 1.3 V 26 nS 15 nC Notes: 1. Calculated continuous current based on maximum allowable junction temperature. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDP6030L/FDB6030L Rev E(W) FDP6030L/FDB6030L Electrical Characteristics FDP6030L/FDB6030L Typical Characteristics 1.8 180 VGS = 10V ID, DRAIN CURRENT (A) 150 VGS = 3.5V 6.0V 1.6 5.0V 120 4.5V 1.4 4.0V 90 4.0V 4.5V 1.2 5.0V 60 6.0V 3.5V 10V 1 30 3.0V 0 0.8 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5 0 Figure 1. On-Region Characteristics. 1.2 1 0.8 0.6 -25 0 25 50 75 100 125 o TJ, JUNCTION TEMPERATURE ( C) 150 175 0.025 0.020 o TA = 125 C 0.015 o TA = 25 C 0.010 0.005 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1000 90 VDS = 5V IS, REVERSE DRAIN CURRENT (A) VGS = 0V 75 ID, DRAIN CURRENT (A) 100 ID = 26A 1.4 -50 80 0.030 ID = 26A VGS =10V 1.6 40 60 ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 20 60 45 o o TA = 125 C -55 C 30 o 25 C 15 0 100 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6030L/FDB6030L Rev E(W) FDP6030L/FDB6030L Typical Characteristics 2000 ID = 26A VDS = 10V 20V 8 15V 6 Ciss 1200 4 800 Coss 2 400 0 0 0 5 10 15 Qg, GATE CHARGE (nC) f = 1MHz VGS = 0 V 1600 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20 Crss 0 25 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 1000 5000 10µs RDS(ON) LIMIT 100 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 5 1mS 100µs 10mS 100mS DC 10 VGS = 10V SINGLE PULSE o RθJC = 2.9 C/W o TA = 25 C 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 3000 2000 1000 0 0.00001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE SINGLE PULSE RθJC = 2.9°C/W TA = 25°C 4000 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 2.9 °C/W 0.2 0.1 P(pk 0.1 t1 t2 TJ - TA = P * RθJC(t) Duty Cycle, D = t1 / t2 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDP6030L/FDB6030L Rev E(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303 675 2175 or 800 344 3860 Toll Free USA/Canada Fax: 303 675 2176 or 800 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 800 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81 3 5817 1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com