FDB8441-F085

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Other names and brands may be claimed as the property of others. N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ Applications „ Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers „ Low Qrr Body Diode „ Electronic Steering „ UIS Capability (Single Pulse and Repetitive Pulse) „ Integrated Starter / Alternator „ Qualified to AEC Q101 „ Distributed Power Architectures and VRMs „ RoHS Compliant „ Primary Switch for 12V Systems AD FREE I M ENTATIO LE N MP LE Features ©2010 Semiconductor Components Industries, LLC. September-2017, Rev. 1 Publication Order Number: FDB8441-F085/D FDB8441-F085 N-Channel PowerTrench® MOSFET FDB8441-F085 Symbol VDS Drain to Source Voltage Parameter Ratings 40 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (TC < 160oC, VGS = 10V) 80 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) ID 28 Pulsed EAS PD TJ, TSTG A See Figure 4 Single Pulse Avalanche Energy (Note 1) 947 Power dissipation W 2 W/oC -55 to 175 oC Derate above 25oC Operating and Storage Temperature mJ 300 Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient RθJA Thermal Resistance Junction to Ambient, 1in2 copper pad area (Note 2) 0.5 o 62 oC/W 43 oC/W C/W Package Marking and Ordering Information Device Marking FDB8441 Device FDB8441-F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V 40 - - - - 1 - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VDS = VGS, ID = 250µA 2 2.8 4 V ID = 80A, VGS = 10V - 1.9 2.5 ID = 80A, VGS = 10V, TJ = 175°C - 3.3 4.3 VDS = 25V, VGS = 0V, f = 1MHz - 15000 - pF - 1250 - pF pF TJ = 150°C µA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 685 - RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.1 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 215 280 nC VGS = 0 to 2V - 29 38 nC - 60 - nC - 32 - nC - 49 - nC Qg(TH) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge www.onsemi.com 2 VDD = 20V ID = 35A Ig = 1mA FDB8441-F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 77 ns td(on) Turn-On Delay Time - 23 - ns tr Turn-On Rise Time - 24 - ns td(off) Turn-Off Delay Time - 75 - ns tf Turn-Off Fall Time - 17.9 - ns toff Turn-Off Time - - 147 ns V VDD = 20V, ID = 35A VGS = 10V, RGS = 1.5Ω Drain-Source Diode Characteristics ISD = 35A - 0.8 1.25 ISD = 15A - 0.8 1.0 V Reverse Recovery Time IF = 35A, di/dt = 100A/µs - 52 68 ns Reverse Recovery Charge IF = 35A, di/dt = 100A/µs - 76 99 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Starting TJ = 25oC, L = 0.46mH, IAS = 64A. 2: Pulse width = 100s. www.onsemi.com 3 FDB8441-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 25 0 50 75 100 125 150 TC, CASE TEMPERATURE(oC) NORMALIZED THERMAL IMPEDANCE, ZθJC VGS = 10V 200 150 100 50 0 25 175 50 75 100 TC, CASE Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 CURRENT LIMITED BY PACKAGE 125 150 175 TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 0 10 1 10 FDB8441-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 4000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) 500 10us 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) T = 25oC C 1 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 160 o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 100 160 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) o TJ = 175 C 80 TJ = 25oC TJ = -55oC 40 0 2.0 2.5 3.0 3.5 VGS = 10V VGS = 5V VDD = 5V 120 4.0 4.5 5.0 80 VGS = 4V 40 VGS = 3.5V 0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) TJ = 25oC TJ = 175oC 20 10 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage 2 3 4 Figure 8. Saturation Characteristics PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 4.5V 0 Figure 7. Transfer Characteristics 30 1000 5000 120 VGS, GATE TO SOURCE VOLTAGE (V) 50 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) Figure 6. Unclamped Inductive Switching Capability Figure 5. Forward Bias Safe Operating Area ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V 0 40 80 120 160 -40 TJ, JUNCTION TEMPERATURE(oC) Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 5 200 FDB8441-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250µA 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 40000 100 0.1 1.10 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = 250µA 50 10 ID = 80A VDD = 15V 8 VDD = 25V 6 VDD = 20V 4 2 0 0 50 100 150 200 250 Qg, GATE CHARGE(nC) Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 6 FDB8441-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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