FDB86135

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Applications • High Power and Current Handling Capability • DC-DC Synchronous rectification • RoHS Compliant • Hot swap • DC-DC primary bridge D D G G S D2-PAK FDB Series S o MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Drain Curren - Continuous (Silicon Limited) - Continuous( Package Limited) ID Ratings 100 Units V ±20 V TC = 25oC 176 TC = 25oC 120 TC = 25oC(Note 1a) - Continuous - Pulsed EAS Single Pulsed Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range 704 A (Note 3) 658 mJ (Note 1a) 227 W (Note 1b) 2.4 W/oC -55 to +175 oC Ratings Units - TC = 25oC - TA = 25oC A 75 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case (Note 1) 0.66 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 62.5 oC/W Package Marking and Ordering Information Device Marking FDB86135 Device FDB86135 ©2011 Fairchild Semiconductor Corporation FDB86135 Rev. C1 Package D2-PAK Reel Size 330mm 1 Tape Width 24mm Quantity 800 www.fairchildsemi.com FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V - 0.07 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250μA, VGS = 0V, TC = 25oC VDS = 80V, VGS = 0V - - 1 μA IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA ID = 250μA, Referenced to 25oC On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.0 3.5 mΩ gFS Forward Transconductance VDS = 10V, ID = 75A - 167 - S VDS = 25V, VGS = 0V f = 1MHz - 5485 7295 pF - 2430 3230 pF - 210 - pF - 89 116 nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge VDS = 80V, ID = 75A VGS = 10V - 24 - nC - 8 - nC - 25 - nC - 22 54 ns - 54 118 ns - 37 84 ns - 11 32 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50V, ID = 75A VGS = 10V, RGEN = 4.7Ω Drain-Source Diode Characteristics VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A, VDD = 80V dIF/dt = 100A/μs (Note 2) - - 1.25 V - 72 - ns - 129 - nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b) 62.5 °C/W when mounted on a minimum pad of 2 oz copper a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 36.3 A, VDD = 100 V, VGS = 10 V. FDB86135 Rev. C1 2 www.fairchildsemi.com FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 100 300 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 100 ID, Drain Current[A] ID, Drain Current[A] 600 Figure 2. Transfer Characteristics 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 2. TC = 25 C 2 0.02 1 0.1 1 VDS, Drain-Source Voltage[V] 10 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.0040 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 500 0.0035 VGS = 10V VGS = 20V 0.0030 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.0025 0 *Note: TC = 25 C 60 120 180 240 ID, Drain Current [A] 300 1 0.2 360 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 6. Gate Charge Characteristics 10 10000 Ciss VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 6 *Note: 1. VGS = 0V 2. f = 1MHz 5000 Coss VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 Crss 100 0.1 FDB86135 Rev. C1 *Note: ID = 75A 0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 30 60 Qg, Total Gate Charge [nC] 90 www.fairchildsemi.com FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.1 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.8 1.5 1.2 0.9 0.6 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 75A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 200 3000 1000 ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 100 10ms 100ms 10 Operation in This Area is Limited by R DS(on) DC *Notes: 1 o 150 100 Limited by package 50 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Unclamped Inductive Switching Capability IAS, AVALANCHE CURRENT (A) 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) FDB86135 Rev. C1 4 www.fairchildsemi.com FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Typical Performance Characteristics Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 3 1 0 .5 0 .1 0 .2 0 .0 1 0 .0 5 t1 0 .0 2 0 .0 1 *N o te s : t2 o 1 . Z θ J C (t) = 0 .6 6 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) S in g le p u ls e 0 .0 0 1 -5 10 FDB86135 Rev. C1 PDM 0 .1 10 -4 -3 -2 -1 10 10 10 R e c ta n g u la r P u ls e D u r a tio n [s e c ] 5 1 10 www.fairchildsemi.com FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Typical Performance Characteristics FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB86135 Rev. C1 6 www.fairchildsemi.com FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDB86135 Rev. C1 7 www.fairchildsemi.com FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Mechanical Dimensions D2-PAK 10.67 9.65 -A- 12.70 1.68 1.00 4 9.45 9.65 8.38 10.00 (6.40) 1.78 MAX 2 1 3.80 3 1.05 1.78 1.14 0.99 0.51 (2.12) 5.08 5.08 0.25 B M LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL AM -B6.22 MIN 4.83 4.06 1.65 1.14 4 6.86 MIN 15.88 14.61 SEE DETAIL A 2 3 1 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER ANSI Y14.5M - 1994. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO254P1524X482-3N F) FILENAME: TO263A02REV6 GAGE PLANE 0.74 0.33 0.25 2.79 1.78 0.25 MAX SEATING PLANE 8 0 0.10 B 8 0 (5.38) DETAIL A, ROTATED 90 SCALE: 2X Dimensions in Millimeters FDB86135 Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 FDB86135 Rev. C1 9 www.fairchildsemi.com FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS™ Sync-Lock™ 2Cool™ ® F-PFS™ AccuPower™ ®* ® ® ® FRFET PowerTrench AX-CAP * SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Green Bridge™ Programmable Active Droop™ Build it Now™ TinyBuck™ Green FPS™ QFET® CorePLUS™ TinyCalc™ QS™ Green FPS™ e-Series™ CorePOWER™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ GTO™ RapidConfigure™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ ® DEUXPEED ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® and Better™ SignalWise™ TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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