FDB86566-F085

D D N-Channel PowerTrench® MOSFET FDB86566-F085 N-Channel PowerTrench® MOSFET FDB86566-F085 60 V, 110 A, 2.7 mΩ G Features „ Typical RDS(on) = 2.2 mΩ at VGS = 10V, ID = 80 A G „ Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A TO-263 FDB SERIES „ UIS Capability S S „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 60 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) A 193 mJ Power Dissipation 176 W Derate Above 25oC 1.2 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.85 oC/W 43 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 50uH, IAS = 88A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDB86566 Device FDB86566-F085 ©2016 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Package D2-PAK(TO-263) 1 Reel Size 330mm Tape Width 24mm Quantity 800 units Publication Order Number: FDB86566-F085/D Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 60V, VGS = 0V 60 - - V - - 1 μA - - 1 mA - - ±100 nA TJ = 25oC TJ = 175oC (Note 4) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V 2.0 3.2 4.0 V - 2.2 2.7 mΩ - 4.1 5.0 mΩ TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge VDS = 30 V, VGS = 0V, f = 1MHz VDD = 30V ID = 80A - 6655 - pF - 1745 - pF - 57 - pF - 2.2 - Ω - 80 110 nC - 12 - nC - 35 - nC - 10 - nC ns Switching Characteristics ton Turn-On Time - - 115 td(on) Turn-On Delay - 36 - ns tr Rise Time - 52 - ns td(off) Turn-Off Delay - 36 - ns tf Fall Time - 13 - ns toff Turn-Off Time - - 64 ns ISD =80A, VGS = 0V - - 1.25 V ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=48V - 78 102 ns - 100 130 nC VDD = 30V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDB86566-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 200 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) VGS = 10V CURRENT LIMITED BY PACKAGE 150 100 50 0 175 Figure 1. Normalized Power Dissipation vs. Case Temperature CURRENT LIMITED BY SILICON 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 VGS = 10V TC = 25oC IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDB86566-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.1 1ms 10ms 100ms 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 300 200 TJ = 25oC 100 TJ = 175oC 50 0 2 10 STARTING TJ = 150oC 1 0.001 0.01 0.1 1 10 100 1000 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability TJ = -55oC 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 100 VGS = 0 V 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 300 300 250 200 250μs PULSE WIDTH Tj=25oC 150 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDD = 5V 150 100 300 PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX 250 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 50 0 250 200 250μs PULSE WIDTH Tj=175oC 150 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 100 50 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics 5 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDB86566-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ID = 80A PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX 40 30 20 TJ = 25oC TJ = 175oC 10 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX 2.0 1.6 1.2 0.8 ID = 80A VGS = 10V 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.10 VGS = VDS ID = 250μA 1.2 ID = 5mA 1.05 0.9 1.00 0.6 0.95 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Ciss Coss 100 f = 1MHz VGS = 0V 10 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10000 1000 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature CAPACITANCE (pF) 2.4 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 50 10 ID = 80A VDD = 30V 8 VDD =24V 6 VDD = 36V 4 2 0 0 15 30 45 60 Qg, GATE CHARGE(nC) 75 90 Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 FDB86566-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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