FDB8860-F085

FDB8860_ F085 N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.6m: Features Applications „ RDS(ON) = 1.9m: (Typ), VGS = 5V, ID = 80A „ 12V Automotive Load Control „ Qg(5) = 89nC (Typ), VGS = 5V „ Start / Alternator Systems „ Low Miller Charge „ Electronic Power Steering Systems „ Low QRR Body Diode „ ABS „ UIS Capability (Single Pulse and Repetitive Pulse) „ DC-DC Converters „ Qualified to AEC Q101 „ RoHS Compliant ©2010 Fairchild Semiconductor Corporation FDB8860_F085 RevA 1 www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET June 2010 Symbol VDSS Drain to Source Voltage Ratings 30 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V, TC < 163oC) 80 A Continuous (VGS = 5V, TC < 162oC) 80 A Continuous (VGS = 10V, TC = 25oC, with RTJA = 43oC/W) 31 A Figure 4 A Single Pulse Avalanche Energy (Note 1) 947 mJ Power Dissipation 254 W Derate above 25oC 1.7 W/oC -55 to +175 oC ID Parameter Pulsed EAS PD TJ, TSTG Operating and Storage Temperature Thermal Characteristics RTJC Thermal Resistance Junction to Case 0.59 o C/W C/W RTJA Thermal Resistance Junction to Ambient (Note 2) 62 o RTJA Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 43 oC/W Package Marking and Ordering Information Device Marking FDB8860 Device FDB8860_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 30 - - - V - 1 - - 250 - r100 nA V Off Characteristics Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = r20V - VDS = VGS, ID = 250PA 1 1.7 3 ID = 80A, VGS = 10V - 1.6 2.3 BVDSS TJ = 150°C PA On Characteristics VGS(th) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance ID = 80A, VGS = 5V - 1.9 2.6 ID = 80A, VGS = 4.5V - 2.1 2.7 ID = 80A, VGS = 10V, TJ = 175°C - 2.5 3.6 VDS = 15V, VGS = 0V, f = 1MHz - 9460 12585 pF - 1710 2275 pF pF m: Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance - 1050 1575 RG Gate Resistance f = 1MHz - 1.8 - : Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 165 214 nC - 89 115 nC - 9.1 12 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V Qg(TH) Threshold Gate Charge VGS = 0V to 1V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge FDB8860_F085 Rev A 2 VDD = 15V ID = 80A Ig = 1.0mA - 26 - nC - 18 - nC - 33 - nC www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ns Switching Characteristics t(on) Turn-On Time - - 340 td(on) Turn-On Delay Time - 14 - ns tr Turn-On Rise Time - 213 - ns td(off) Turn-Off Delay Time - 79 - ns tf Turn-Off Fall Time - 49 - ns toff Turn-Off Time - - 192 ns VDD = 15V, ID = 80A VGS = 5V, RGS = 1: Drain-Source Diode Characteristics ISD = 80A - - 1.25 V ISD = 40A - - 1.0 V Reverse Recovery Time ISD = 80A, dISD/dt = 100A/Ps - - 43 ns Reverse Recovery Charge ISD = 80A, dISD/dt = 100A/Ps - - 29 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Starting TJ = 25oC, L =0.47mH, IAS = 64A , VDD = 30V, VGS = 10V. 2: Pulse width = 100s This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8860_F085 Rev A 3 www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted POWER DISSIPATION MULIPLIER 1.2 300 VGS = 10V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 25 50 75 100 125 150 TC, CASE TEMPERATURE( oC) 175 NORMALIZED THERMAL IMPEDANCE ZTJA 1 VGS = 5V 75 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 CURRENT LIMITED BY PACKAGE 150 0 25 0.0 0 225 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJC x RTJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 10 10 -1 0 10 FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 3000 I(PK), PEAK CURRENT (A) TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK 1000 CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 50 -5 10 -4 10 -3 10 -2 10 t, PULSE WIDTH (s) -1 10 0 10 1 10 Figure 4. Peak Current Capability FDB8860_F085 Rev A 4 www.fairchildsemi.com 1000 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT(A) 10us 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If Rz 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 10 CURRENT LIMITED BY PACKAGE 1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.1 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE(V) STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.1 60 Figure 5. Forward Bias Safe Operating Area 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) 10000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 160 120 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX VDD = 5V 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 60 40 20 3.5 0.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (m: 3.0 TJ = 175oC 2.5 1.5 3 TJ = 25oC 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8860_F085 Rev A 0.2 0.4 0.6 0.8 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.0 Figure 8. Saturation Characteristics PULSE DURATION = 80Ps DUTY CYCLE=0.5% MAX 2.0 PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX 0 4.0 3.5 VGS = 10V 80 Figure 7. Transfer Characteristics ID = 40A VGS = 3V VGS = 5V 0 1.0 VGS = 4V 100 FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1.6 PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( OC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com 1.10 VGS = VDS ID = 250PA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 ID = 1mA 1.05 1.0 1.00 0.8 0.6 0.95 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( oC) 0.90 -80 200 VGS, GATE TO SOURCE VOLTAGE(V) Ciss CAPACITANCE (pF) 10000 Coss 500 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 80 120 160 200 10 VDD = 15V 8 6 4 2 ID = 80A ID = 1A 0 0 20 40 60 80 100 120 140 160 180 Qg, GATE CHARGE (nC) Figure 13. Capacitance vs Drain to Source Voltage FDB8860_F085 Rev A 40 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 20000 f = 1MHz VGS = 0V 0 TJ, JUNCTION TEMPERATURE( oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 -40 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ F-PFS¥ FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ Motion-SPM¥ OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FlashWriter®* FPS¥ ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ SPM® STEALTH¥ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS¥ SyncFET¥ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 © Fairchild Semiconductor Corporation www.fairchildsemi.com FDB8860_F085 N-Channel Logic Level PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.