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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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N-Channel Logic Level PowerTrench® MOSFET
40 V, 110 A, 1.5 mΩ
Features
Typical RDS(on) = 1.2 m at VGS = 10V, ID = 80 A
Typical Qg(tot) = 121 nC at VGS = 10V, ID = 80 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Drain-to-Source Voltage
VGS
ID
EAS
PD
Parameter
Ratings
40
Units
V
±20
V
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
110
Pulsed Drain Current
TC = 25°C
See Figure 4
Single Pulse Avalanche Energy
(Note 2)
A
217
mJ
Power Dissipation
176
W
Derate Above 25oC
1.18
W/oC
TJ, TSTG Operating and Storage Temperature
RJC
Thermal Resistance, Junction to Case
RJA
Maximum Thermal Resistance, Junction to Ambient
-55 to + 175
oC
0.85
oC/W
43
oC/W
(Note 3)
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 60μH , IAS = 85A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RJC is guaranteed by design, while RJA is determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
Package Marking and Ordering Information
Device Marking
FDB9406L
Device
FDB9406L-F085
©2017 Semiconductor Components Industries, LLC.
August-2017, Rev. 2
Package
D-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800units
Publication Order Number:
FDB9406L-F085/D
FDB9406L-F085 N-Channel Logic Level PowerTrench® MOSFET
FDB9406L-F085
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-to-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
ID = 250A, VGS = 0V
VDS = 40V,
VGS = 0V
40
-
-
V
-
-
1
A
-
-
1
mA
-
-
±100
nA
TJ = 25oC
TJ = 175oC (Note 4)
VGS = ±20V
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250A
1.0
1.8
3.0
V
ID = 80A, VGS= 4.5V
-
1.7
2.2
m
ID = 80A,
VGS= 10V
-
1.2
1.5
m
-
2.1
2.6
m
TJ = 25oC
TJ = 175oC (Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate-to-Source Gate Charge
Qgd
Gate-to-Drain “Miller“ Charge
VDS = 20V, VGS = 0V,
f = 1MHz
VDD = 32V
ID = 80A
-
8600
-
pF
-
2500
-
pF
-
107
-
pF
-
2.1
-
-
121
170
nC
-
15
-
nC
-
26
-
nC
-
18
-
nC
ns
Switching Characteristics
ton
Turn-On Time
-
-
90
td(on)
Turn-On Delay
-
20
-
ns
tr
Rise Time
-
44
-
ns
td(off)
Turn-Off Delay
-
67
-
ns
tf
Fall Time
-
23
-
ns
toff
Turn-Off Time
-
-
145
ns
ISD =80A, VGS = 0V
-
-
1.25
V
ISD = 40A, VGS = 0V
-
-
1.2
V
IF = 80A, dISD/dt = 100A/s
VDD = 32V
-
90
120
ns
-
125
164
nC
VDD = 20V, ID = 80A,
VGS = 10V, RGEN = 6
Drain-Source Diode Characteristics
VSD
Source-to-Drain Diode Voltage
trr
Reverse-Recovery Time
Qrr
Reverse-Recovery Charge
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
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2
FDB9406L-F085 N-Channel Logic Level PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
CURRENT LIMITED
BY SILICON
270
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
300
1.2
0.8
0.6
0.4
0.2
0.0
210
VGS = 10V
CURRENT LIMITED
BY PACKAGE
180
150
120
90
60
30
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
0
175
25
2
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
200
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZJC
240
DUTY CYCLE - DESCENDING ORDER
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
0.01
-5
10
-4
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC x RJC + TC
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
IDM, PEAK CURRENT (A)
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
175 - TC
I = I25
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
0
10
1
10
FDB9406L-F085 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
300
100
100us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
1ms
10ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100ms
0.1
0.1
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
300
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
150
100
TJ = -55oC
50
TJ = 175oC
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
10
100
1000
VGS = 0 V
TJ = 175 oC
10
TJ = 25 oC
1
0.2
0.4
0.6
0.8
1.0
1.2
300
ID, DRAIN CURRENT (A)
10V Top
6V
5V
4.5V
4V
3.5V
3V Bottom
150
1
Figure 8. Forward Diode Characteristics
VGS
200
0.1
VSD, BODY DIODE FORWARD VOLTAGE (V)
250s PULSE WIDTH
Tj=25oC
250
0.01
100
0.1
0.0
5
Figure 7. Transfer Characteristics
300
1
0.001
300
TJ = 25oC
1
STARTING TJ = 150oC
Figure 6. Unclamped Inductive Switching
Capability
200
0
10
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
PULSE DURATION = 250s
DUTY CYCLE = 0.5% MAX
VDD = 5V
250
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
ID, DRAIN CURRENT (A)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
1000
100
50
0
250s PULSE WIDTH
Tj=175oC
250
VGS
10V Top
6V
5V
4.5V
4V
3.5V
3V Bottom
200
150
100
50
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
0
Figure 9. Saturation Characteristics
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
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4
5
FDB9406L-F085 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (m)
50
PULSE DURATION = 250s
DUTY CYCLE = 0.5% MAX
ID = 80A
40
30
o
TJ = 25 C
20
TJ = 175oC
10
0
1
2
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 11. RDSON vs. Gate Voltage
1.3
1.2
1.0
ID = 80A
VGS = 10V
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
ID = 5mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
0.9
0.8
1.00
0.7
0.6
0.95
0.5
0.4
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.90
-80
200
10000
Ciss
Coss
1000
100
Crss
f = 1MHz
VGS = 0V
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
CAPACITANCE (pF)
1.4
1.05
1.0
10
0.1
1.6
1.10
1.1
0.3
-80
PULSE DURATION = 250s
DUTY CYCLE = 0.5% MAX
Figure 12. Normalized RDSON vs. Junction
Temperature
VGS = VDS
ID = 250A
1.2
1.8
100
Figure 15. Capacitance vs. Drain to Source
Voltage
10
ID = 80A
8
VDD = 20V
VDD = 24V
6
VDD =16V
4
2
0
0 10 20 30 40 50 60 70 80 90 100110120130
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs. Gate to Source
Voltage
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5
FDB9406L-F085 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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