FDB9503L-F085

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Other names and brands may be claimed as the property of others. FDB9503L-F085 P-Channel PowerTrench® MOSFET FDB9503L-F085 P-Channel PowerTrench® MOSFET S D - 40 V, - 110 A, 2.6 mΩ G Features „ Typical RDS(on) = 2.0 mΩ at VGS = - 10V, ID = - 80 A „ Typical Qg(tot) = 196 nC at VGS = - 10V, ID = - 80 A „ UIS Capability G „ RoHS Compliant TO-263AB FDB SERIES „ Qualified to AEC Q101 S D Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Electrical Power Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings -40 Units V ±16 V Gate-to-Source Voltage Drain Current - Continuous (VGS= -10) (Note 1) TC = 25°C -110 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) A 984 mJ Power Dissipation 333 W Derate Above 25oC 2.22 W/oC TJ, TSTG Operating and Storage Temperature o -55 to + 175 RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) C 0.45 o C/W 43 o C/W Notes: 1: Current is limited by wirebond configuration. 2: Starting TJ = 25°C, L = 0.3mH, IAS = -81A, VDD = -40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDB9503L Device FDB9503L-F085 ©2016 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Publication Order Number: FDB9503L-F085/D Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = -250μA, VGS = 0V -40 - - V - - -1 μA TJ = 25oC VDS = -40V, TJ = 175oC (Note 4) VGS = 0V VGS = ±16V, VDS = 0V - - -1 mA - - ±100 nA On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = -250μA -1.0 -1.8 -3.0 V ID = -80A, VGS= -4.5V, TJ = 25oC - 2.7 3.5 mΩ ID = -80A, VGS= -10V - 2.0 2.6 mΩ - 2.9 3.7 mΩ TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to -10V Qg(th) Threshold Gate Charge VGS = 0 to -2V - 26 - nC Qgs Gate-to-Source Gate Charge - 44 - nC Qgd Gate-to-Drain “Miller“ Charge - 22 - nC VDS = -20V, VGS = 0V, f = 1MHz VDD = -32V ID = -80A - 8320 - pF - 5620 - pF - 102 - pF - 20 - Ω - 196 255 nC Switching Characteristics ton Turn-On Time - - 146 ns td(on) Turn-On Delay - 12 - ns - 86 - ns - 700 - ns tr Rise Time td(off) Turn-Off Delay tf Fall Time - 310 - ns toff Turn-Off Time - - 1538 ns V VDD = -20V, ID = -80A, VGS = -10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD = -80A, VGS = 0V - - -1.25 ISD = -40A, VGS = 0V - - -1.2 V ISD = -80A, dISD/dt = 100A/μs, VDD= -32V - 124 186 ns - 214 321 nC Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDB9503L-F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 350 1.0 300 -ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 250 VGS = -10V 200 150 100 50 0 175 Figure 1. Normalized Power Dissipation vs. Case Temperature CURRENT LIMITED BY PACKAGE 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 DUTY CYCLE - DESCENDING ORDER 1 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 -5 10 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance www.onsemi.com 3 0 10 1 10 FDB9503L-F085 P-Channel PowerTrench® MOSFET Typical Characteristics 10000 VGS = -10V TC = 25oC -IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 4. Peak Current Capability 1000 -IAS, AVALANCHE CURRENT (A) -ID, DRAIN CURRENT (A) 1000 100 100 100us 10 LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 0.1 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TC = 25oC 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25oC STARTING TJ = 150oC 10 1 1E-3 100 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 10000 NOTE: Refer to ON Semiconductor Application Notes AN7514 and Figure 5. Forward Bias Safe Operating Area AN7515 Figure 6. Unclamped Inductive Switching Capability PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX 250 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 300 VDD = -5V 200 TJ = 25oC 150 TJ = 175oC 100 TJ = -55oC 50 0 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics 5 300 100 VGS = 0 V 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Forward Diode Characteristics www.onsemi.com 4 1.2 FDB9503L-F085 P-Channel PowerTrench® MOSFET Typical Characteristics 300 VGS 250 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 300 -10V Top -7V -5V -4.5V -4V -3.5V Bottom 200 150 100 250μs PULSE WIDTH Tj=25oC 50 250 150 100 250μs PULSE WIDTH Tj=175oC 50 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX ID = -80A 16 12 8 TJ = 175oC 4 o TJ = 25 C 0 2 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.4 PULSE DURATION = 250μs DUTY CYCLE = 0.5% MAX 1.2 1.0 0.8 0.6 -80 ID = -80A VGS = -10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.2 1.10 VGS = VDS ID = -250μA 1.0 ID = -5mA 1.05 0.8 1.00 0.6 0.4 -80 5 1.6 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 20 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 9. Saturation Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) -10V Top -7V -5V -4.5V -4V -3.5V Bottom 200 0 NORMALIZED GATE THRESHOLD VOLTAGE VGS 0.95 -40 0 40 80 120 160 0.90 -80 200 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) o TJ, JUNCTION TEMPERATURE( C) Figure 13. Normalized Gate Threshold Voltage vs. Temperature Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature www.onsemi.com 5 FDB9503L-F085 P-Channel PowerTrench® MOSFET Typical Characteristics Ciss 10000 Coss 1000 100 f = 1MHz VGS = 0V 10 0.1 Crss 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 15. Capacitance vs. Drain to Source Voltage -VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) 100000 10 ID = -80A 8 VDD = -16V -20V -24V 6 4 2 0 0 50 100 150 Qg, GATE CHARGE(nC) 200 Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 6 FDB9503L-F085 P-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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