FDBL0110N60

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDBL0110N60 N-Channel PowerTrench® MOSFET 60 V, 300 A, 1.1 mΩ Features „ Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A D „ UIS Capability „ RoHS Compliant Applications „ Industrial Motor Drive G „ Industrial Power Supply „ Industrial Automation „ Battery Operated tools S „ Battery Protection For current package drawing, please refer to the Fairchild website at https://www.fairchildsemi.com/evaluate/package-specifications/packageDetails.html?id=PN_PSOFA-008 „ Solar Inverters „ UPS and Energy Inverters „ Energy Storage „ Load Switch MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Gate-to-Source Voltage Ratings 60 Units V ±20 V Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 300 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) A 1167 mJ Power Dissipation 429 W Derate Above 25oC 2.86 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) -55 to + 175 oC 0.35 oC/W 43 oC/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.57mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDBL0110N60 Device FDBL0110N60 ©2014 Fairchild Semiconductor Corporation FDBL0110N60 Rev.1.2 Package MO-299A - 1 - - www.fairchildsemi.com FDBL0110N60 N-Channel PowerTrench® MOSFET January 2016 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V 60 - - V - - 1 μA - - 1 mA - - ±100 nA VDS = 60V TJ = 25oC VGS = 0V TJ = 175oC (Note 4) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V 2.0 3.0 4.0 V - 0.85 1.1 mΩ - 1.5 2.2 mΩ TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge - VDS = 30V, VGS = 0V, f = 1MHz VDD = 48V ID = 80A - 13650 - pF - 3375 - pF - 255 - pF - 2.3 - Ω - 170 220 nC - 24 32 nC - 56 - nC 24 - nC ns Switching Characteristics ton Turn-On Time - - 137 td(on) Turn-On Delay - 45 - ns tr Rise Time - 61 - ns td(off) Turn-Off Delay - 80 - ns tf Fall Time - 41 - ns toff Turn-Off Time - - 156 ns - - 300 A - - See Figure 4 A ISD =80A, VGS = 0V - - 1.25 V ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=48V - 107 139 ns - 183 265 nC VDD = 30V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDBL0110N60 Rev.1.2 2 www.fairchildsemi.com FDBL0110N60 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 500 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 400 VGS = 10V CURRENT LIMITED BY SILICON 300 200 100 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V 1000 TC = 25oC FOR TEMPERATURES 100 ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - TC 150 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDBL0110N60 Rev.1.2 3 www.fairchildsemi.com FDBL0110N60 N-Channel PowerTrench® MOSFET Typical Characteristics 2000 100 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10 1ms 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.1 10ms 100ms 300 STARTING TJ = 150oC 0.01 0.1 1 10 100 1000 10000 Figure 6. Unclamped Inductive Switching Capability 400 IS, REVERSE DRAIN CURRENT (A) VDD = 5V TJ = 25oC 120 TJ = 175oC 60 TJ = -55oC 2 10 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 180 0 STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 240 100 1 0.001 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 100 TJ = 175 oC 10 1 0.1 0.0 7 TJ = 25 oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 400 400 300 5V 200 15V Top 10V 8V 7V 6V 5.5V 5V Bottom ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS 80μs PULSE WIDTH Tj=25oC 100 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5V 200 VGS 15V Top 10V 8V 5.5V 7V 6V 5.5V 5V Bottom 100 80μs PULSE WIDTH Tj=175oC 0 5 Figure 9. Saturation Characteristics FDBL0110N60 Rev.1.2 300 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDBL0110N60 N-Channel PowerTrench® MOSFET Typical Characteristics 9.70 9.90 DETAIL "A" 0.60 0.80 B 0.40 0.60 (0.40) 11.58 11.78 10° (3.30) (2X) 0.50 0.70 1 0.60 0.80 10.28 10.48 0.20 C A B DETAIL "A" 8 0.60 0.70 0.90 1.20 (0.35) (8X) 0.25 0.20 7X C A B C 8.40 10.20 TOP VIEW 5.10 4.45 DETAIL "B" 6.64 0.20 C 0.40 0.60 2.20 2.40 2.95 8.10 4.99 2.04 0.10 C 2.90 1.46 C 6.64 SIDE VIEW 0.86 13.28 0.60 2.80 1 A 9.80 10.00 0.20 C A B 0.80 8 1.20 LAND PATTERN RECOMMENDATION (8.00) 1.90 2.10 5.19 4.73 0.10 (2X) (7.15) 6.55 6.75 2.60 (2X) 3.30 (2X) 5.89 1.20 3X 3.75 0.65 2X 7.40 7.60 (8.30) BOTTOM VIEW 10° (0.35) DETAIL "B" NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-299, ISSUE A, DATED NOVEMBER 2009. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) DRAWING FILE NAME: MKT-PSOF08AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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