FDBL0120N40

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDBL0120N40 N-Channel PowerTrench® MOSFET 40 V, 240 A, 1.2 mΩ Features „ Typical RDS(on) = 0.9 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A D „ UIS Capability „ RoHS Compliant Applications „ Industrial Motor Drive G „ Industrial Power Supply „ Industrial Automation „ Battery Operated tools S „ Battery Protection For current package drawing, please refer to the Fairchild web‐ site at https://www.fairchildsemi.com/evaluate/package‐spec‐ ifications/packageDetails.html?id=PN_PSOFA‐008 „ Solar Inverters „ UPS and Energy Inverters „ Energy Storage „ Load Switch MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Gate-to-Source Voltage Ratings 40 Units V ±20 V Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 240 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) A 316 mJ Power Dissipation 300 W Derate Above 25oC 2.0 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) -55 to + 175 oC 0.5 oC/W 43 oC/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 79.5A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDBL0120N40 Device FDBL0120N40 ©2014 Fairchild Semiconductor Corporation FDBL0120N40 Rev.C3 Package MO-299A - 1 - - www.fairchildsemi.com FDBL0120N40 N-Channel PowerTrench® MOSFET November 2014 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 40V, VGS = 0V 40 - - V - - 1 μA - - 1 mA - - ±100 nA TJ = 25oC TJ = 175oC (Note 4) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V 2.0 3.2 4.0 V - 0.90 1.20 mΩ - 1.64 1.86 mΩ TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz VDD = 32V ID = 80A - 7735 - pF - 2160 - pF - 129 - pF - 2.5 - Ω - 90 107 nC - 13.5 15.5 nC - 43 - nC - 10 - nC ns Switching Characteristics ton Turn-On Time - - 102 td(on) Turn-On Delay - 33 - ns tr Rise Time - 40 - ns td(off) Turn-Off Delay - 47 - ns tf Fall Time - 23 - ns toff Turn-Off Time - - 91 ns V VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD =80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=32V - 91 107 ns - 128 167 nC Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDBL0120N40 Rev.C3 2 www.fairchildsemi.com FDBL0120N40 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 500 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 400 VGS = 10V CURRENT LIMITED BY SILICON 300 200 100 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 VGS = 10V TC = 25oC IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 I = I2 175 - TC 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDBL0120N40 Rev.C3 3 www.fairchildsemi.com FDBL0120N40 N-Channel PowerTrench® MOSFET Typical Characteristics 100 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10 1 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.1 10ms 100ms 300 0 2 0.01 0.1 1 10 100 1000 10000 400 IS, REVERSE DRAIN CURRENT (A) TJ = 25oC 60 STARTING TJ = 150oC Figure 6. Unclamped Inductive Switching Capability 180 TJ = 175oC 10 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V 120 STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 240 100 1 0.001 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 TJ = -55oC 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 100 TJ = 175 oC 10 1 0.1 0.0 7 TJ = 25 oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 300 300 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 250 200 150 100 80μs PULSE WIDTH Tj=25oC 50 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS 5V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 5V 150 VGS 15V Top 10V 8V 5.5V 7V 6V 5.5V 5V Bottom 100 50 0 5 Figure 9. Saturation Characteristics FDBL0120N40 Rev.C3 250 80μs PULSE WIDTH Tj=175oC 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDBL0120N40 N-Channel PowerTrench® MOSFET Typical Characteristics ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 8 6 TJ = 175oC TJ = 25oC 4 2 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.6 1.4 1.2 1.0 0.8 ID = 80A VGS = 10V 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.10 VGS = VDS ID = 250μA 1.2 ID = 1mA 1.05 0.9 1.00 0.6 0.95 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10000 Ciss 1000 Coss 100 Crss f = 1MHz VGS = 0V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage FDBL0120N40 Rev.C3 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 100000 CAPACITANCE (pF) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.0 10 ID = 80A VDD = 20V 8 VDD =16V VDD = 24V 6 4 2 0 0 20 40 60 80 Qg, GATE CHARGE(nC) 100 Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDBL0120N40 N-Channel PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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