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FDBL0150N80
N-Channel PowerTrench® MOSFET
80 V, 300 A, 1.4 mΩ
Features
Typical RDS(on) = 1.1 mΩ at VGS = 10V, ID = 80 A
Typical Qg(tot) = 172 nC at VGS = 10V, ID = 80 A
D
UIS Capability
RoHS Compliant
Applications
Industrial Motor Drive
G
Industrial Power Supply
Industrial Automation
Battery Operated tools
S
Battery Protection
For current package drawing, please refer to the Fairchild web‐
site at https://www.fairchildsemi.com/evaluate/package‐spec‐
ifications/packageDetails.html?id=PN_PSOFA‐008
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Drain-to-Source Voltage
VDSS
VGS
ID
EAS
PD
Parameter
Gate-to-Source Voltage
Ratings
80
Units
V
±20
V
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
300
Pulsed Drain Current
TC = 25°C
See Figure 4
Single Pulse Avalanche Energy
(Note 2)
A
820
mJ
Power Dissipation
429
W
Derate Above 25oC
2.86
W/oC
TJ, TSTG Operating and Storage Temperature
o
-55 to + 175
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
(Note 3)
C
0.35
o
C/W
43
o
C/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.4mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
Package Marking and Ordering Information
Device Marking
FDBL0150N80
Device
FDBL0150N80
©2014 Fairchild Semiconductor Corporation
FDBL0150N80 Rev.1.2
Package
MO-299A
-
1
-
-
www.fairchildsemi.com
FDBL0150N80 N-Channel PowerTrench® MOSFET
July 2016
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-to-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 80V,
VGS = 0V
80
-
-
V
-
-
1
μA
TJ = 25oC
TJ = 175oC (Note 4)
-
-
1
mA
-
-
±100
nA
2.0
3.0
4.0
V
-
1.1
1.4
mΩ
-
2.4
3.1
mΩ
VGS = ±20V
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 80A,
VGS= 10V
TJ = 25oC
TJ = 175oC (Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge at 10V
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate-to-Source Gate Charge
Qgd
Gate-to-Drain “Miller“ Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
VDD = 64V
ID = 80A
-
12800
-
pF
-
1925
-
pF
-
139
-
pF
-
3.0
4.6
Ω
-
172
188
nC
-
23
27
nC
-
51
-
nC
34
-
nC
ns
Switching Characteristics
ton
Turn-On Time
-
-
128
td(on)
Turn-On Delay
-
42
-
ns
tr
Rise Time
-
73
-
ns
td(off)
Turn-Off Delay
-
87
-
ns
tf
Fall Time
-
48
-
ns
toff
Turn-Off Time
-
-
193
ns
V
VDD = 40V, ID = 80A,
VGS = 10V, RGEN = 6Ω
Drain-Source Diode Characteristics
VSD
Source-to-Drain Diode Voltage
trr
Reverse-Recovery Time
Qrr
Reverse-Recovery Charge
ISD =80A, VGS = 0V
-
-
1.25
ISD = 40A, VGS = 0V
-
-
1.2
V
IF = 80A, dISD/dt = 100A/μs,
VDD=64V
-
117
136
ns
-
205
269
nC
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
FDBL0150N80 Rev.1.2
2
www.fairchildsemi.com
FDBL0150N80 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
400
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
CURRENT LIMITED
BY PACKAGE
VGS = 10V
300
CURRENT LIMITED
BY SILICON
200
100
0
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
200
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
IDM, PEAK CURRENT (A)
VGS = 10V
1000
TC = 25oC
FOR TEMPERATURES
100
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC
150
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
FDBL0150N80 Rev.1.2
3
www.fairchildsemi.com
FDBL0150N80 N-Channel PowerTrench® MOSFET
Typical Characteristics
2000
100
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
10
1ms
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
0.1
10ms
100ms
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
300
STARTING TJ = 150oC
0.1
1
10
100
1000 10000
300
IS, REVERSE DRAIN CURRENT (A)
o
TJ = 25 C
120
TJ = 175oC
60
TJ = -55oC
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
VGS = 0 V
100
TJ = 175 oC
10
TJ = 25 oC
1
0.1
0.0
7
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
250
250
5V
VGS
200
5V
150
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.01
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
2
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
180
0
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
240
100
1
0.001
500
Figure 5. Forward Bias Safe Operating Area
ID, DRAIN CURRENT (A)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
2000
1000
100
80μs PULSE WIDTH
Tj=25oC
50
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
FDBL0150N80 Rev.1.2
150
100
50
0
5
VGS
15V Top
10V
8V 5.5V
7V
6V
5.5V
5V Bottom
200
80μs PULSE WIDTH
Tj=175oC
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 10. Saturation Characteristics
4
www.fairchildsemi.com
FDBL0150N80 N-Channel PowerTrench® MOSFET
Typical Characteristics
ID = 80A
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
16
12
TJ = 175oC
TJ = 25oC
8
4
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 11. RDSON vs. Gate Voltage
1.6
1.2
0.8
ID = 80A
VGS = 10V
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 12. Normalized RDSON vs. Junction
Temperature
1.10
VGS = VDS
ID = 250μA
1.2
ID = 5mA
1.05
0.9
1.00
0.6
0.95
0.3
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.90
-80
200
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
10000
Ciss
1000
Coss
100
f = 1MHz
VGS = 0V
10
0.1
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs. Drain to Source
Voltage
FDBL0150N80 Rev.1.2
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
100000
CAPACITANCE (pF)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
2.4
10
ID = 80A
VDD = 40V
8
VDD =32V
6
VDD = 48V
4
2
0
0
20
40
60 80 100 120 140 160 180
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs. Gate to Source
Voltage
5
www.fairchildsemi.com
FDBL0150N80 N-Channel PowerTrench® MOSFET
Typical Characteristics
9.70
9.90
DETAIL "A"
0.60
0.80
B
0.40
0.60
(0.40)
11.58
11.78
10°
(3.30) (2X)
0.50
0.70
1
0.60
0.80
10.28
10.48
0.20
C A B
DETAIL "A"
8
0.60
0.70
0.90
1.20
(0.35)
(8X)
0.25
0.20
7X
C A B
C
8.40
10.20
TOP VIEW
5.10
4.45
DETAIL "B"
6.64
0.20 C
0.40
0.60
2.20
2.40
2.95
8.10
4.99
2.04
0.10 C
2.90
1.46
C
6.64
SIDE VIEW
0.86
13.28
0.60
2.80
1
A
9.80
10.00
0.20
C A B
0.80
8
1.20
LAND PATTERN
RECOMMENDATION
(8.00)
1.90
2.10
5.19
4.73
0.10
(2X)
(7.15) 6.55
6.75
2.60
(2X)
3.30
(2X)
5.89
1.20
3X
3.75
0.65
2X
7.40
7.60
(8.30)
BOTTOM VIEW
10°
(0.35)
DETAIL "B"
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-299, ISSUE A, DATED NOVEMBER
2009.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-1994.
E) DRAWING FILE NAME: MKT-PSOF08AREV3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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