FDBL0630N150

FDBL0630N150 MOSFET – N-Channel, POWERTRENCH) 150 V, 169 A, 6.3 mW  www.onsemi.cn • rDS(on) = 5 mW ( VGS = 10 V， ID = 80 A) •Typ Qg(tot) = 70 nC  VGS = 10 V， ID = 80 A •UIS  • This Device is Pb−Free and is RoHS Compliant VDSS rDS(ON) MAX ID MAX 150 V 6.3 mW @ 10 V 169 A 应用 D •   •  •  •  • • •UPS  • • ! G S MOSFET — N−Channel  (TJ = 25°C, )     VDSS －  150 V VGS －  ±20 V  － (VGS = 10 V) ( 1) TC = 25°C 169 A ID  EAS PD TJ, TSTG TC = 25°C 502 mJ  500 W  25°C  3.3 W/°C −55 to +175 °C RqJC !"#$%& 0.3 °C/W RqJA !"'(%&)* ( 3) 43 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ( +,-) ./)*01$2，4。./ 56，789:，;?。 1.  !$6。 2. @!AB，CD TJ = 25°C, L = 0.24 mH, IAS = 64 A, VDD = 100 V， B"，VDD = 100 V 3. RqJA E#!"# #"'(%&$ ，%，#% +0&' FG$HIJK1L。RθJC (MNO:，%)RqJA)PQR$STNO U0。VW$)*0X#JK* 2 oz Y$ 1 in2 HZ+。 © Semiconductor Components Industries, LLC, 2014 June, 2019 − Rev. 3 MARKING DIAGRAM  3  ( 2)    H−PSOF8L 11.68x9.80 CASE 100CU 1 $Y&Z&3&K FDBL 0630N150 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Date Code &K = Lot Run Traceability Code FDBL0630N150 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: FDBL0630N150CN/D FDBL0630N150  (TJ = 25°C, )        150 − − V − − 1 mA − − 1 mA − − ±100 nA 2.0 2.8 4.0 V − 5 6.3 mW − 14 17.5 mW − 5805 − pF  BVDSS IDSS － -[ ID = 250 mA, VGS = 0 V －  VDS = 150 V, VGS = 0 V TJ = 25°C TJ = 175°C ( 4) －  VGS = ±20 V VGS(th) " \ VGS = VDS, ID = 250 mA rDS(on) " ;]& ID = 80 A, VGS = 10 V IGSS  TJ = 25°C TJ = 175°C ( 4)  VDS = 75V, VGS = 0V, f = 1 MHz Ciss ^/_ Coss ^_ − 536 − pF Crss 056^_ − 16 − pF &` f = 1 MHz − 2.2 − W * 10 V $ab VGS = 0 to 10 V, VDD = 75 V, ID = 80 A − 70 90 nC \b VGS = 0 to 2 V, VDD = 75 V, ID = 80 A − 10.5 13 nC Qgs － b VDD = 75 V, ID = 80 A − 32.5 − nC Qgd － “c7” b VDD = 75 V, ID = 80 A − 10 − nC ;]B VDD = 75 V, ID = 80 A, VGS = 10 V, RGEN = 6 W − − 80 ns ;]deB − 39 − ns +8B − 30 − ns Rg Qg(ToT) Qg(th)  ton td(on) tr 9fdeB − 70 − ns tf :B − 23 − ns toff 9fB − − 130 ns ISD = 80 A, VGS = 0 V − − 1.25 V ISD = 40 A, VGS = 0 V − − 1.2 V IF = 80 A, dISD/dt = 100 A/ms, VDD = 120 V − 108 125 ns − 323 467 nC td(off) －  VSD －;g Trr 05hiB Qrr 05hib Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ( +,-) ，“jk?”1l$mnopq:$?q:st，A