MOSFET – N-Channel,
POWERTRENCH)
150 V, 169 A, 6.3 mW
FDBL86210-F085
Features
•
•
•
•
•
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Typical rDS(on) = 5 m at VGS = 10 V, ID = 80 A
Typical Qg(tot) = 70 nC at VGS = 10 V, ID = 80 A
UIS Capability
AEC−Q101 Qualified and PPAP Capable
This Device is Pb−Free and are RoHS Compliant
D
Applications
•
•
•
•
•
G
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12 V Systems
S
N−Channel
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Ratings
Unit
VDSS
Drain to Source Voltage
Parameter
150
V
VGS
Gate to Source Voltage
±20
V
Drain Current − Continuous
(VGS = 10), TC = 25°C (Note 1)
169
A
Symbol
ID
Pulsed Drain Current, TC = 25°C
See Figure 4
EAS
Single Pulse Avalanche Energy
(Note 2)
502
mJ
PD
Power Dissipation
500
W
Derate Above 25°C
3.3
W/°C
−55 to +175
°C
TJ, TSTG
Operating and Storage Temperature
RJC
Thermal Resistance Junction to Case
0.3
°C/W
RJA
Maximum Thermal Resistance
Junction to Ambient (Note 3)
43
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by silicon.
2. Starting TJ = 25°C, L = 0.24 mH, IAS = 64 A, VDD = 100 V during inductor
charging and VDD = 0 V during time in avalanche.
3. RJA is the sum of the junction−to−case and case−to−ambient thermal
resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RJC is guaranteed by design, while RJA
is determined by the user’s board design. The maximum rating presented
here is based on mounting on a 1 in2 pad of 2oz copper.
H−PSOF8L
CASE 100CU
MARKING DIAGRAM
$Y&Z&3&K
FDBL
86210
$Y
&Z
&3
&K
FDBL86210
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
Device
Top Mark
Package
Shipping{
FDBL86210 FDBL86210 H−PSOF8L 2000 Units/
−F085
Tape&Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
June, 2020 − Rev. 4
1
Publication Order Number:
FDBL86210−F085/D
FDBL86210−F085
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
ID = 250 A, VGS = 0 V
Drain to Source Leakage Current
VDS = 150 V,
VGS = 0 V
Gate to Source Leakage Current
150
−
−
V
TJ = 25°C
−
−
1
A
TJ = 175°C (Note 4)
−
−
1
mA
−
−
±100
nA
2.0
2.8
4.0
V
VGS = ±20 V
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 A
rDS(on)
Drain to Source On Resistance
ID = 80 A,
VGS = 10 V
TJ = 25°C
−
5
6.3
m
TJ = 175°C (Note 4)
−
14
17.5
m
−
5805
−
pF
−
536
−
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
VDS = 75 V, VGS = 0 V, f = 1 MHz
−
16
−
pF
Gate Resistance
f = 1 MHz
−
2.2
−
Total Gate Charge at 10 V
−
70
90
nC
−
10.5
13
nC
−
32.5
−
nC
−
10
−
nC
−
−
80
ns
Threshold Gate Charge
VGS = 0 to 10 V VDD = 75 V,
ID = 80 A
VGS = 0 to 2 V
Qgs
Gate to Source Gate Charge
VDD = 75 V, ID = 80 A
Qgd
Gate to Drain “Miller” Charge
Qg(ToT)
Qg(th)
SWITCHING CHARACTERISTICS
ton
td(on)
tr
td(off)
tf
toff
Turn−On Time
Turn−On Delay Time
VDD = 75 V, ID = 80 A,
VGS = 10 V, RGEN = 6
−
39
−
ns
Rise Time
−
30
−
ns
Turn−Off Delay Time
−
70
−
ns
Fall Time
−
23
−
ns
Turn−Off Time
−
−
130
ns
ISD = 80 A, VGS = 0 V
−
−
1.25
V
ISD = 40 A, VGS = 0 V
−
−
1.2
V
IF = 80 A, dISD/dt = 100 A/s,
VDD = 120 V
−
108
125
ns
−
323
467
nC
DRAIN−SOURCE DIODE CHARACTERISTIC
VSD
Source to Drain Diode Voltage
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
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2
FDBL86210−F085
TYPICAL CHARACTERISTICS
1.2
200
160
ID, Drain Current [A]
Power Dissipation Multiplier
1.0
0.8
0.6
0.4
120
80
40
0.2
0.0
0
25
50
75
100
125
150
0
175
25
50
TC, Case Temperature [°C]
ZJC, Normalized Thermal Impedance
Figure 1. Normalized Power Dissipation
vs. Case Temperature
2
75
100
125
150
200
175
TC, Case Temperature [°C]
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
Duty factor: D = t1 / t2
Peak TJ = PDM × ZJA × RJA + TC
SINGLE PULSE
0.01
10−5
10−4
10−3
10−2
10−1
100
101
t, Rectangular Pulse Duration (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
IDM, Peak Current [A]
10000
TC = 25°C
For temperatures
above 25°C derate peak
current as follows:
VGS = 10 V
1000
I + I2
ƪǸ
175 * T
150
C
ƫ
100
SINGLE PULSE
10
10−5
10−4
10−3
10−2
t, Rectangular Pulse Duration (s)
Figure 4. Peak Current Capability
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3
10−1
100
10
FDBL86210−F085
TYPICAL CHARACTERISTICS (continued)
1000
IAS, Avalanche Current [A]
ID, Drain Current [A]
1000
100
10
100 s
Operation in this
area may be
limited by rDS(on)
1
1 ms
SINGLE PULSE
TJ = max rated
TC = 25°C
0.1
1
10 ms
100 ms
10
If R = 0
tAV = (L)(IAS) / (1.3 × Rated BVDSS − VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS × R) / (1.3 × Rated BVDSS − VDD) + 1]
100
Starting TJ = 25°C
10
Starting TJ = 150°C
1
0.001
100
0.01
0.1
VDS, Drain to Source Voltage [V]
1
10
100
1000
10000
tAV, Time in Avalanche [ms]
NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515.
Figure 5. Forward Bias Safe Operating Area
200
400
Pulse duration = 80 s
Duty cycle = 0.5% MAX
IS, Reverse Drain Current [A]
VGS = 0 V
VDD = 5 V
160
ID, Drain Current [A]
Figure 6. Unclamped Inductive Switching Capability
120
TJ = 175°C
80
TJ = 25°C
TJ = −55°C
40
0
2
3
4
5
6
7
100
TJ = 175°C
10
TJ = 25°C
1
0.1
0.0
8
Figure 7. Transfer Characteristics
300
VGS
15 V Top
10 V
8V
7V
6V
5.5 V
5 V Bottom
150
100
5V
50
0
1
2
3
200
150
1.0
1.2
5V
80 s Pulse Width
Tj = 175°C
0
4
0.8
100
50
80 s Pulse Width
Tj = 25°C
0
0.6
VGS
15 V Top
10 V
8V
7V
6V
5.5 V
5 V Bottom
250
ID, Drain Current [A]
ID, Drain Current [A]
200
0.4
Figure 8. Forward Diode Characteristics
300
250
0.2
VSD, Body Diode Forward Voltage [V]
VGS, Gate to Source Voltage [V]
0
5
1
2
3
4
VDS, Drain to Source Voltage [V]
VDS, Drain to Source Voltage [V]
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
5
FDBL86210−F085
TYPICAL CHARACTERISTICS (continued)
ID = 80 A
3.0
Pulse duration = 80 s
Duty cycle = 0.5% MAX
40
30
20
TJ = 175°C
10
Pulse duration = 80 s
Duty cycle = 0.5% MAX
2.5
Normalized Drain to Source
On−Resistance
rDS(on), Drain to Source
On−Resistance [m]
50
2.0
1.5
1.0
0.5
ID = 80 A
VGS = 10 V
TJ = 25°C
0
2
4
6
8
0.0
−80
10
−40
VGS, Gate to Source Voltage [V]
Figure 11. RDSON vs. Gate Voltage
1.10
VGS = VDS
ID = 250 A
1.2
0.9
0.6
0.3
0.0
−80
−40
0
40
80
120
160
0.90
−80
200
−40
0
40
80
120
160
200
TJ, Junction Temperature [°C]
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
VGS, Gate to Source Voltage [V]
Ciss
1000
Capacitance [pF]
200
0.95
10
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
160
1.00
10000
1
120
1.05
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
1
0.1
80
ID = 1 mA
TJ, Junction Temperature [°C]
10
40
Figure 12. Normalized RDSON vs. Junction Temperature
Normalized Drain to Source
Breakdown Voltage
Normalized Gate Threshold Voltage
1.5
0
TJ, Junction Temperature [°C]
100
VDD = 75 V
8
VDD = 60 V
VDD = 90 V
6
4
2
0
200
ID = 80 A
0
20
40
60
80
Qg, Gate Charge [nC]
VDS, Drain to Source Voltage [V]
Figure 15. Capacitance vs. Drain to Source Voltage
Figure 16. Gate Charge vs. Gate to Source Voltage
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE B
DATE 20 MAY 2022
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
WW
ZZ
XXXX
DOCUMENT NUMBER:
DESCRIPTION:
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
= Specific Device Code
98AON13813G
H−PSOF8L 11.68x9.80
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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