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FDC021N30
N-Channel PowerTrench® MOSFET
30 V, 6.1 A, 26 mΩ
Features
General Description
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A
This N-Channel PowerTrench MOSFET is produced using
Fairchild’s advanced PowerTrench® process that has been
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.3 A
High Performance Trench Technology for Extremely Low
rDS(on)
Applications
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
Load Switch
Fast Switching Speed
Battery Protection
RoHS Compliant
Power Management
D
D
D
D
G
S
MOSFET Maximum Ratings TA= 25°C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
V
(Note 3)
±20
6.1
(Note 4)
62
Power Dissipation
( Note 1a)
1.6
Power Dissipation
(Note 1b)
0.7
ID
TA = 25°C
-Pulsed
TJ, TSTG
Units
V
(Note 1a)
-Continuous
PD
Ratings
30
Operating and Storage Junction Temperature Range
-55 to + 150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
78
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
175
°C/W
Package Marking and Ordering Information
Device Marking
21N
Device
FDC021N30
©2016 Fairchild Semiconductor Corporation
FDC021N30 Rev.1.0
Package
SSOT-6TM
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDC021N30 N-Channel PowerTrench® MOSFET
June 2016
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = 20 V, VDS = 0 V
100
nA
3.0
V
30
V
16
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25°C
VGS = 10 V, ID = 6.1 A
19
26
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 5.3 A
23
33
VGS = 10 V, ID = 6.1 A,
TJ = 125°C
26
37
VDS = 5 V, ID = 6.1 A
30
rDS(on)
gFS
Forward Transconductance
1.0
1.8
-5
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
0.1
510
710
pF
170
240
pF
22
30
pF
1.3
2.6
Ω
6
12
ns
2
10
ns
13
24
ns
2
10
ns
7.7
10.8
nC
3.7
5.2
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VDD = 15 V, ID = 6.1 A,
VGS = 10 V, RGEN = 6 Ω
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
Qg(TOT)
Total Gate Charge
VGS = 0 V to 4.5 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15 V,
ID = 6.1 A
1.4
nC
1.1
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 6.1 A
(Note 2)
IF = 6.1 A, di/dt = 100 A/μs
0.8
1.2
V
14
25
ns
3
10
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user’s board design.
b.175 °C/W when mounted on
a minimum pad of 2 oz copper
a. 78 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2: Pulse Test: Pulse Width