FDC2512

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDC2512 www.onsemi.com FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 1.4 A, 150 V. Applications • DC/DC converter D D High performance trench technology for extremely low RDS(ON) • Low gate charge (8nC typ) • High power and current handling capability • Fast switching speed D D 1 6 2 5 3 4 G Absolute Maximum Ratings Symbol • S SuperSOT TM-6 RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 150 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) – Pulsed 1.4 8 EAS Single Pulse Avalanche Energy (Note 3) PD Maximum Power Dissipation (Note 1a) 13.5 1.6 (Note 1b) 0.8 TJ, Tstg Operating and Storage Junction Temperature Range A mJ W −55 to +150 °C (Note 1a) 78 °C/W (Note 1) 30 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .252 FDC2512 7’’ 8mm 3000 units 2 Semiconductor Components Industries, LLC, 2017 March, 2017, Rev. 1.4 Publication Order Number: FDC2512 1 Symbl TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA 150 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, VDS = 120 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA 4 V On Characteristics ID = 250 µA, Referenced to 25°C 147 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS(on) Static Drain–Source On Resistance ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C 2 2.6 –5.6 mV/°C ID(on) On–State Drain Current ID = 1.4 A VGS = 10 V, VGS = 6.0 V, ID = 1.3 A VGS = 10 V, ID = 1.4 A, TJ = 125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 1.4 A 4 S VDS = 75 V, f = 1.0 MHz V GS = 0 V, 344 pF 319 332 624 425 475 875 mΩ 4 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance 0.1 Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 22 pF 9 pF 1.4 3.0 Ω (Note 2) VDD = 75 V, VGS = 10 V, VDS = 75 V, VGS = 10 V ID = 1 A, RGEN = 6 Ω ID = 1.4 A, 6.5 13 ns 3.5 7 ns 22 33 ns 4 8 ns 8 11 nC 1.5 nC 2.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage IF = 1.4A, Diode Reverse Recovery Time diF/dt = 300 A/µs Diode Reverse Recovery Charge (Note 2) 0.8 (Note 2) 45.8 119 1.3 A 1.2 V nS nC Notes: 1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1in2 pad of 2 oz copper b) 156°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. EAS of 13.5 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V. www.onsemi.com 2 FDC2512 Electrical Characteristics FDC2512 Typical Characteristics VGS = 10V 4.5V 6.0V ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 6 4.0V 4 2 1.3 VGS = 4.0V 1.2 4.5V 1.1 0 10V 1 2 4 6 0 8 1 2 3 4 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.2 0.8 ID = 1.4A VGS =10V ID = 0.7A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 0.9 0 1.8 1.4 1 0.6 0.2 0.7 0.6 TA = 125oC 0.5 0.4 0.3 TA = 25oC 0.2 -50 -25 0 25 50 75 100 125 150 3 4 5 o 6 7 8 9 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 8 10 IS, REVERSE DRAIN CURRENT (A) 25oC TA = -55oC VDS = 25V 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) o 125 C ID, DRAIN CURRENT (A) 5.0V 6 4 2 0 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 2 3 4 5 6 0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDC2512 Typical Characteristics 500 ID = 1.4A VDS = 50V f = 1MHz VGS = 0 V 75V 8 400 100V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 300 200 100 COSS CRSS 0 0 0 1 2 3 4 5 6 7 8 9 0 25 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 75 125 150 40 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100µs 1ms 1 10ms 100ms 0.1 DC 1s VGS = 10V SINGLE PULSE RθJA = 156oC/W 0.01 TA = 25oC 0.001 0.1 1 10 100 SINGLE PULSE RθJA = 156°C/W TA = 25°C 30 20 10 0 0.001 1000 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 100 Figure 8. Capacitance Characteristics. 10 ID, DRAIN CURRENT (A) 50 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 156°C/W 0.2 0.1 P(pk) 0.1 t1 0.05 0.02 0.01 0.01 0.0001 0.001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 SYMM C L Dimensional Outline and Pad Layout 0.95 C 3.00 2.80 A 4 6 0.95 1.00 MIN B 3.00 2.60 1.70 1.50 1 2.60 C 3 0.50 0.30 0.95 0.20 1.90 M 0.70 MIN A B LAND PATTERN RECOMMENDATION (0.30) SEE DETAIL A 1.10 MAX H 1.00 0.70 C 0.10 0.00 0.20 0.08 0.10 C NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO JEDEC MO-193. VAR. AA, ISSUE E. B) ALL DIMENSIONS ARE IN MILLIMETERS. GAGE PLANE C PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.25mm PER END. PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25mm PER SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS ARE DETERMINED AT DATUM H. D) DRAWING FILE NAME: MKT-MA06AREVF 0.25 8° 0° 0.55 0.35 SEATING PLANE 0.60 REF DETAIL A SCALE: 50X ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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