DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
VDSS
RDS(ON) MAX
ID MAX
200 V
725 mW @ 10 V
1.1 A
200 V
FDC2612
DD
G
DD
TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL
General Description
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast switching speed.
MARKING DIAGRAM
Features
•
•
•
•
•
•
S
1.1 A, 200 V. RDS(ON) = 725 mW @ VGS = 10 V
High Performance Trench Technology for Extremely Low RDS(ON)
High Power and Current Handling Capability
Fast Switching Speed
Low Gate Charge (8 nC Typical)
This Device is Pb−Free, Halide Free and is RoHS Compliant
262 M
1
262 = Device Code
M = Date Code
Applications
• DC/DC Converter
PIN CONNECTION
1
6
2
5
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2002
July, 2022 − Rev. 3
1
Publication Order Number:
FDC2612/D
FDC2612
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Ratings
Unit
VDSS
Drain−Source Voltage
200
V
VGSS
Gate−Source Voltage
±20
V
1.1
A
ID
Parameter
Drain Current
Continuous (Note 1a)
Pulsed
PD
Maximum Power Dissipation
4
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
1.6
W
0.8
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Ratings
Unit
RqJA
Thermal Resistance, Junction−to−Ambient (Note 1a)
Parameter
78
°C/W
RqJC
Thermal Resistance, Junction−to−Case (Note 1)
30
°C/W
1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design.
b. 156°C/W when mounted on
a minimum pad of 2 oz copper
a. 78°C/W when mounted on
a 1 in2 pad of 2 oz copper
Scale 1:1 on letter size paper
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2
FDC2612
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
200
−
−
V
OFF CHARACTERISTICS
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 mA
DBV DSS
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, Referenced to 25°C
−
246
−
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 160 V, VGS = 0 V
−
−
1
mA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V, VDS = 0 V
−
−
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V, VDS = 0 V
−
−
–100
nA
DT J
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 mA
2
4
4.5
V
DV GS(th)
Gate Threshold Voltage Temperature
Coefficient
ID = 250 mA, Referenced to 25_C
−
–8.7
−
mV/°C
Static Drain–Source On Resistance
VGS = 10 V, ID = 1.1 A
VGS = 10 V, ID = 1.1 A, TJ = 125_C
−
−
605
1133
725
1430
mW
On–State Drain Current
VGS = 10 V, VDS = 10 V
4
−
−
A
Forward Transconductance
VDS = 10 V, ID = 1.1 A
−
4.4
−
S
VDS = 100 V, VGS = 0 V, f = 1.0 MHz
−
234
−
pF
DT J
RDS(on)
ID(on)
gFS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
−
18
−
pF
Crss
Reverse Transfer Capacitance
−
8
−
pF
−
6
12
ns
−
6
12
ns
SWITCHING CHARACTERISTICS (Note 2)
VDD = 100 V, ID = 1 A, VGS = 10 V,
RGEN = 6 W
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
−
17
30
ns
tf
Turn–Off Fall Time
−
8
16
ns
Qg
Total Gate Charge
−
8
11
nC
Qgs
Gate–Source Charge
−
1.6
−
nC
Qgd
Gate–Drain Charge
−
2.2
−
nC
Maximum Continuous Drain–Source Diode Forward Current
−
−
1.3
A
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A (Note 2)
−
0.8
1.2
V
trr
Diode Reverse Recovery Time
IF = 1.1 A, diF/dt = 300 A/ms (Note 2)
−
74.5
−
nS
Qrr
Diode Reverse Recovery Charge
−
194
−
nC
VDS = 100 V, ID = 1.1 A, VGS = 10 V
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING
IS
VSD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDC2612
ID, DRAIN CURRENT (A)
4
VGS = 10 V
RDS(ON), NORMALIZED
DRAIN−SOURCE ON−RESISTANCE
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
6.5 V
6.0 V
3
5.5 V
2
1
0
2
0
4
6
8
10
1.4
6.0 V
1.3
1.2
VGS = 4.0 V
4.5 V
1.1
10 V
1
0.9
0
1
1.5
ID = 1.1 A
VGS = 10 V
1.8
1.4
1
0.6
0.2
−50
−25
0
25
50
75
100 125
1.3
1.1
150
TA = 125°C
0.9
0.7
TA = 25°C
0.5
4
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 25 V
6
4
TA = 125°C
25°C
−55°C
4
5
6
6
7
8
9
10
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
8
3
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Temperature
2
4
ID = 0.6 A
TJ, JUNCTION TEMPERATURE (°C)
0
3
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
RDS(ON), ON−RESISTANCE (W)
RDS(ON), NORMALIZED
DRAIN−SOURCE ON−RESISTANCE
Figure 1. On−Region Characteristics
2.2
2
ID, DRAIN CURRENT (A)
VDS, DRAIN−SOURCE VOLTAGE (V)
2.6
5.0 V
7
10
VGS = 0 V
1
TA = 125°C
0.1
25°C
0.01
−55°C
0.001
0.0001
VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature
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4
FDC2612
350
15
ID = 1.1 A
VDS = 50 V
100 V
12
150 V
9
6
3
200
150
100
0
2
6
4
8
0
10
Qg, GATE CHARGE (nC)
P(pk), PEAK TRANSIENT POWER (W)
100 ms
RDS(ON) LIMIT
1 ms
10 ms
100 ms
1s
0.1
DC
VGS = 10 V
SINGLE PULSE
RqJA = 156°C/W
TA = 25°C
0.1
1
10
100
50
100
1000
40
125
150
SINGLE PULSE
RqJA = 156°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (s)
VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
75
Figure 8. Capacitance Characteristics
10
1
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
ID, DRAIN CURRENT (A)
CRSS
COSS
50
0
0.001
CISS
250
0
0.01
f = 1 MHz
VGS = 0 V
300
CAPACITANCE (pF)
VGS, GATE−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS (continued)
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
RqJA(t) = r(t) + RqJA
RqJA = 156°C/W
0.2
0.1
0.1
P(pk)
t1
0.05
t2
TJ − TA = P x RqJA(t)
Duty Cycle, D = t1 / t2
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
t1, TIME (s)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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5
100
1000
FDC2612
PACKAGE MARKING AND ORDERING INFORMATION
Device
FDC2612
Device Marking
Package Type
Reel Size
Tape Width
Shipping†
262
TSOT23 6−Lead
(Pb−Free)
7”
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
SCALE 2:1
DATE 31 AUG 2020
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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