FDC3612_F095

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) VDSS RDS(ON) MAX ID MAX 100 V 125 mW @ 10 V 2.6 A 100 V 135 mW @ 6 V FDC3612 General Description D This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC Converter Parameter Ratings Unit VDSS Drain−Source Voltage 100 V VGSS Gate−Source Voltage ±20 V Drain Current Continuous (Note 1a) 2.6 A Pulsed 20 A ID EAS Single Pulse Avalanche Energy (Note 3) 37 mJ PD Maximum Power Dissipation 1.6 W TJ, TSTG (Note 1a) (Note 1b) Operating and Storage Temperature Range 0.8 W −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) 78 °C/W RqJC Thermal Resistance, Junction−to−Case (Note 1) 30 °C/W © Semiconductor Components Industries, LLC, 2012 May, 2022 − Rev. 3 1 G MARKING DIAGRAM XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol D TSOT23 6−Lead (SUPERSOTt−6) CASE 419BL • 2.6 A, 100 V • • • • • S D Features RDS(ON) = 125 mW @ VGS = 10 V RDS(ON) = 135 mW @ VGS = 6 V High Performance Trench Technology for Extremely Low RDS(ON) Low Gate Charge (14 nC Typical) High Power and Current Handling Capability Fast Switching Speed This is a Pb−Free Device D PINOUT 1 6 2 5 3 4 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: FDC3612/D FDC3612 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit − − − 90 mJ − 2.6 A 100 − − V DRAIN−SOURCE AVALANCHE RATINGS (Note 2) WDSS Drain−Source Avalanche Energy IAR Drain−Source Avalanche Current Single Pulse, VDD = 50 V, ID = 2.6 A OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 mA DBV DSS Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − 99 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V − − 10 mA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V − − 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V − − –100 nA DT J ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 2 2.3 4 V DV GS(th) Gate Threshold Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − –6 − mV/°C Static Drain–Source On Resistance VGS = 10 V, ID = 2.6 A VGS = 6 V, ID = 2.5 A VGS = 10 V, ID = 2.6 A, TJ = 125°C − − − 86 91 157 125 135 240 mW On−State Drain Current VGS = 10 V, VDS = 5 V 10 − − A Forward Transconductance VDS = 10 V, ID = 2.6 A − 10 − S VDS = 50 V, VGS = 0 V, f = 1.0 MHz − 660 − pF DT J RDS(on) ID(on) gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 55 − pF Crss Reverse Transfer Capacitance − 40 − pF 0.1 1.4 3.0 W − 6 11 ns − 3.5 7 ns − 23 37 ns − 3.7 7.4 ns − 14 20 nC Rg Gate Resistance SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 W tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge − 2.3 − nC Qgd Gate–Drain Charge − 3.6 − nC VDS = 50 V, ID = 2.6 A, VGS = 10 V DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain–Source Diode Forward Current − − 1.3 A Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) − 0.76 1.2 V trr Diode Reverse Recovery Time − 31 − ns Qrr Diode Reverse Recovery Charge IF = 2.6 A, dIF/dt = 100 A/ms (Note 2) IF = 2.6 A, dIF/dt = 100 A/ms (Note 2) − 56 − nC VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a.) 78 °C/W when mounted on a 1in2 pad of 2oz copper on FR−4 board b.) 156 °C/W when mounted on a minimum pad 2. Pulse Test: Pulse Width ≤ 300 ms, Duty cycle ≤ 2.0 % 3. EAS of 37 mJ is based on starting TJ = 25 °C; N−ch: L = 3 mH, IAS = 5 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 11 A. www.onsemi.com 2 FDC3612 TYPICAL CHARACTERISTICS 1.8 VGS = 10 V 4.5V RDS(ON), Normalized Drain−Source On−Resistance ID, Drain Current (A) 20 5.0V 16 4.0V 12 8 3.5V 4 1.6 VGS = 3.5 V 1.4 4.0V 4.5V 1.2 0.8 0 2 4 6 0 8 4 8 VDS, Drain−Source Voltage (V) 2.2 RDS(ON), On−Resistance (W) 1 0.6 0 25 50 75 100 125 ID = 1.3 A 0.23 0.2 TA = 125°C 0.17 0.14 0.11 TA = 25°C 0.08 0.05 −25 20 0.26 1.4 0.2 −50 16 Figure 2. On−Resistance Variation with Drain Current and Gate Voltage ID = 2.6 A VGS = 10 V 1.8 12 ID, Drain Current (A) Figure 1. On−Region Characteristics RDS(ON), Normalized Drain−Source On−Resistance 10V 1 0 150 2 TJ, Junction Temperature (°C) 4 6 8 10 VGS, Gate to Source Voltage (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance Variation with Gate−to−Source Voltage 20 100 IS, Reverse Drain Current (A) VDS = 5 V ID, Drain Current (A) 5.0V 6.0V 16 12 8 TA = 125°C 25°C 4 −55°C 0 2 2.5 3 3.5 4 VGS = 0 V 10 25°C 0.1 −55°C 0.01 0.001 0.0001 4.5 TA = 125°C 1 VGS, Gate to Source Voltage (V) 0 0.2 0.4 0.6 0.8 1 VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3 1.2 FDC3612 TYPICAL ELECTRICAL CHARACTERISTICS (continued) 10 1000 VDS = 25 V 8 50V f = 1 MHz VGS = 0 V 800 75V Capacitance (pF) VGS, Gate−Source Voltage (V) ID = 2.6 A 6 4 2 C ISS 600 400 200 0 0 0 3 6 9 15 12 COSS CRSS 0 Qg, Gate Charge (nC) Figure 7. Gate Charge Characteristics P(pk), Peak Transient Power (W) ID, Drain Current (A) 10 RDS(ON) LIMIT 100ms 1 1ms 10ms 0.1 100ms VGS = 10 V SINGLE PULSE RqJA = 156°C/W TA = 25°C 0.001 0.1 1s DC 1 10 40 100 80 100 200 40 SINGLE PULSE RqJA = 156°C/W TA = 25°C 30 20 10 0 0.001 0.01 1 0.1 VDS, Drain to Source Voltage (V) 10 100 t1, Time (s) Figure 9. Maximum Safe Operating Area r(t), Normalized Effective Transient Thermal Resistance 60 Figure 8. Capacitance Characteristics 50 0.01 20 VDS, Drain to Source Voltage (V) Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 156°C/W 0.2 0.1 P(pk) 0.1 t1 0.05 t2 0.02 0.01 0.01 0.0001 TJ − TA = P * RqJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.01 0.1 t1, Time (s) 1 10 Figure 11. Transient Thermal Response Curve (Note: Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.) www.onsemi.com 4 100 1000 FDC3612 ORDERING INFORMATION Device Device Marking Package Type Shipping† FDC3612 .362 TSOT−23−6 (Pb−free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative